Keywords:
Semimetals.
;
Electronic books.
Description / Table of Contents:
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices.
Type of Medium:
Online Resource
Pages:
1 online resource (481 pages)
ISBN:
9780080864389
Series Statement:
Issn Series ; v.Volume 41
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=405267
DDC:
537.622
Language:
English
Note:
Front Cover -- High Speed Heterostructure Devices -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Quantum Electron Devices: Physics and Applications -- I. Introduction -- II. Resontant-Tunneling Diodes -- III. Resonant Tunneling Bipolar Transistors (RTBTs) with Double Barrier in the Base -- IV. Devices with Multiple-Peak I-V Characteristics and Multiple-State RTBTs -- V. Circuit Applications -- VI. Unipolar Resonant Tunneling Transistors -- VII. Superlattice Transport and Quantum Reflections -- VIII. Field-Induced Localization in Vertical and Parallel Transport -- Acknowledgments -- References -- Chapter 2. GaAs-Gate Semiconductor-Insulator-Semiconductor FET -- I. Introduction-Basic Principles -- II. History and Development of SISFETs and Related Devices -- III. SIS Capacitors -- IV. Design of Vertical Structure -- V. Processing Issues -- VI. FET Characteristics -- VII. SISFET Modeling -- VIII. Circuit Results -- IX. Discussion and Future Perspective -- Acknowledgments -- References -- Chapter 3. Unipolar InP-Based Transistors -- I. Introduction -- II. Growth of InP-Based Structures -- III. InP Field Effect Transistors (FETs) -- IV. High Electron Mobility Transistors (HEMTs) -- V. Summary -- VI. Acknowledgments -- References -- Chapter 4. Complementary Heterostructure FET Integrated Circuits -- I. Introduction -- II. Circuit Issues -- III. Materials -- IV. Heterostructure Transport -- V. Heterostructure Device Design -- VI. Integration -- VII. Fabrication -- VIII. Device Characteristics and Circuit Performance -- IX. Concluding Remarks -- Acknowledgments -- References -- Chapter 5. GaAs-Based and InP-Based Heterostructure Bipolar Transistors -- I. Introduction -- II. Current Gain and Some Key Electrical Properties in HBT Designs -- III. Epitaxial Growth of HBT Structures.
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IV. Device Fabrication Process and Related Issues -- V. Nonequilibrium Electron Transport in HBTs -- VI. Device Characteristics and Limiting Factors -- VII. Implementation of HBTs in Integrated Circuits -- VIII. Summary and Prospects -- References -- Chapter 6. High-Frequency Resonant-Tunneling Devices -- I. Introduction -- II. Times in Resonant Tunneling -- III. High-Frequency Applications -- IV. Future Expectations -- Acknowledgments -- References -- List of Variables -- Chapter 7. Resonant-Tunneling Hot-Electron Transistors and Circuits -- I. Introduction -- II. Hot Electron Transport in RHETs -- III. RHET dc and Microwave Characteristics -- IV. RHET Circuit Applications -- V. RHET Room-Temperature Operation -- VI. Summary -- Acknowledgment -- References -- Index -- Contents of Volumes in This Series.
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