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  • 1
    In: Biogeosciences, Katlenburg-Lindau [u.a.] : Copernicus, 2004, 6(2009), Seite 877885, 1726-4189
    In: volume:6
    In: year:2009
    In: pages:877885
    Description / Table of Contents: A CO2 enrichment experiment (PeECE III) was carried out in 9 mesocosms in which the seawater carbonate system was manipulated to achieve three different levels of pCO2. At the onset of the experimental period, nutrients were added to all mesocosms in order to initiate phytoplankton blooms. Primary production rates were measured by in-vitro incubations based on 14C-incorporation and oxygen production/consumption. Size fractionated particulate primary production was also determined by 14C incubation and is discussed in relation to phytoplankton composition. Primary production rates increased in response to nutrient addition and a net autotrophic phase with 14C-fixation rates up to 4 times higher than initial was observed midway through the 24 days experiment before net community production (NCP) returned to near-zero and 14C-fixation rates dropped below initial values. No clear heterotrophic phase was observed during the experiment. Based on the 14C-measurements we found higher cumulative primary production at higher pCO2 towards the end of the experiment. CO2 related differences were also found in size fractionated primary production. The most noticeable responses to CO2 treatments with respect to primary production rates occurred in the second half of the experiment when phytoplankton growth had become nutrient limited, and the phytoplankton community changed from diatom to flagellate dominance. This opens for two alternative hypotheses that the effects are either associated with mineral nutrient limited growth, and/or with a change in phytoplankton species composition. The lack of a clear net heterotrophic phase in the last part of the experiment supports the idea that a substantial part of production in the upper layer was not degraded locally, but either accumulated or exported vertically.
    Type of Medium: Online Resource
    Pages: graph. Darst
    ISSN: 1726-4189
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 13 (1970), S. 997-999 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 10 (1967), S. 462-472 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 12 (1969), S. 1105-1106 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2208-2218 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced by implanting, at room temperature, 3-μm-thick relaxed Si1−xGex alloys of high crystalline quality with 2 MeV Si+ ions has been studied as a function of Ge content (x=0.04, 0.13, 0.24, or 0.36) and Si dose in the dose range 1010–2×1015 cm−2. The accumulation of damage with increasing dose has been investigated by Rutherford backscattering spectrometry, optical reflectivity depth profiling, and transmission electron microscopy. An enhanced level of damage, and a strong decrease in the critical dose for the formation of a buried amorphous layer in Si1−xGex is observed with increasing x. Electron paramagnetic resonance studies show that the dominant defects produced by the implantation are Si and Ge dangling bonds in amorphouslike zones of structure similar to a-Si1−xGex films of the same x, and that the effect of increasing the ion dose is primarily to increase the volume fraction of material present in this form until a continuous amorphous layer is formed. A comparative study of the optically determined damage in the alloys with the use of a damage model indicates a significant increase in the primary production of amorphous nuclei in the alloys of Ge content x〉0.04. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2173-2178 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Sb in Si at concentrations around its solid solubility has been studied by isoconcentration experiments. The samples, grown by molecular-beam epitaxy, had constant Sb121 background dopings and a Sb123 spike embedded in this background. The diffusion was followed as a function of Sb background concentration at two different temperatures of 872 and 1019 °C by secondary ion mass spectrometry, differential Hall/resistivity measurements, and transmission electron microscopy. At concentrations exceeding the solid solubility Sb precipitates and interstitial-type dislocation loops were observed. At these concentrations the diffusivity decreased with increasing Sb background concentration. At concentrations below both the solid solubility and the intrinsic carrier concentration, for the highest diffusion temperature of 1019 °C, the diffusivity increases with increasing Sb background doping. This behavior is discussed considering mobile Sb2V complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1180-1183 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proton-irradiation-induced electronic defects in relaxed, epitaxial p-type Si1−xGex layers grown by molecular-beam epitaxy have been investigated by deep level transient spectroscopy (DLTS) for 0≤x≤0.25. Three dominating lines in the DLTS spectra have been observed and correlated to the divacancy, interstitial carbon, and the interstitial-boron–substitutional-carbon pair. For all three levels the activation enthalpy relative to the valence band decreases with increasing Ge content. Annealing studies demonstrated that the annealing of the defect level, identified as interstitial carbon, is retarded with increasing Ge content, while the annealing temperatures of the two other defects are similar to those observed in silicon. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3254-3259 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation of deep B or Sb marker layers next to a 1.1×1020 cm−3 Sb box, as well as the formation of Sb precipitates within the box. It is concluded that the interstitials are not associated with precipitate growth, but that they are generated from formation of Sb-vacancy complexes, primarily involving 2 Sb atoms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 691-698 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of the diffusion of Ge, Sn, As, and Sb in Si at high donor concentrations provided by phosphorous doping have been performed. It is found that for donor concentrations, CD below ∼2×1020 cm−3, the diffusivity depends linearly on CD; for doping concentrations above ∼2×1020 cm−3, however, the diffusivity increases dramatically with increasing donor concentrations. This behavior has been successfully modeled within the vacancy–percolation model, and it is concluded that collective phenomena play a significant role at high donor concentrations.
    Type of Medium: Electronic Resource
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