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  • 1
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semiconductors -- Congresses. ; Semiconductors -- Defects -- Congresses. ; Hydrogen -- Congresses. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (598 pages)
    Edition: 1st ed.
    ISBN: 9780444598837
    DDC: 537.6/226
    Language: English
    Note: Front Cover -- Hydrogen in Semiconductors: Bulk and Surface Properties -- Copyright Page -- Table of Contents -- Preface -- Introduction -- In Memory of Günther Harbeke (Excerpt from A. Frova's Welcome Address) -- Chapter 1. General Reviews: Hydrogen in and on Semiconductors -- Hydrogen in Crystalline Semiconductors -- Theoretical Aspects of Hydrogen in Crystalline Semiconductors -- Electronic Structure, Dynamics, and Metastability of Muonium in Semiconductors -- Electronic and Structural Properties of Hydrogen on Semiconductor Surfaces -- Hydrogen Diffusion and Electronic Metastability in Amorphous Silicon -- Chapter 2. Hydrogen Diffusion and Effusion -- Hydrogen Diffusion in Crystalline Semiconductors -- Hydrogen in Crystalline and Amorphous Silicon -- Hydrogen Effusion: A Probe for Surface Desorption and Diffusion -- Hydrogen Enhanced Oxygen Diffusion -- Electrolytic Hydrogenation of P-Type Silicon Bulk and Surface Modifications -- On the Modeling of Hydrogen Diffusion Processes and Complex Formation in P-Type Crystalline Silicon -- Modeling of Hydrogen Diffusion in P-Type GaAs:Zn -- Modulation and Thermal Stability of Hydrogen in Amorphous Silicon -- The Dispersive Diffusion of Hydrogen in Undoped a-Si : H -- Hydrogen Evolution in Amorphous Silicon Carbide -- Chapter 3. Ydrogen-Related States and Defects -- Electron Paramagnetic Resonance of Hydrogen in Silicon -- Theory of H Sites in Undoped Crystalline Semiconductors -- Metastable States in Si : H -- Hydrogen Implantation in Semiconductors -- Hydrogen Complexes in Hydrogenated Silicon -- Defect Generation during Plasma Treatment of Semiconductors -- Evidence for Intrinsic Point Defect Generation during Hydrogen-Plasma Treatment of Silicon -- Structure of the (111) Hydrogen Platelet in Silicon -- Optically Detected Nuclear Magnetic Resonance in Amorphous Silicon Related Materials. , RF Hydrogen Plasma Influence on Shallow and Deep Levels in Crystalline Silicon -- Defects in H Implanted GaAs Studied by Ion-Beam and Low-Energy Positron Techniques -- States of Hydrogen in Crystalline Silicon -- Infrared Analysis of Hydrogen in GaP -- The Si-H IR Absorption Bands in NTD FZ (H 2) Si and Their Identification -- Hydrogen Complexes and Their Vibrations in Undoped Crystalline Silicon -- Evidence for Molecular Hydrogen in Single Crystal Silicon -- Role of the Hydrogen in the Light-Induced Defects in Undoped Hydrogenated Amorphous Silicon -- Hydrogen Related Effects in a-Si : H Studied by Photothermal Deflection Spectroscopy -- Low Energy Ion-Beam Post Hydrogenation of Phosphor Implanted Amorphous Silicon Films -- Slow Structural Transitions of Hydrogen in Hydrogenated Amorphous Silicon during Low Temperature Annealing -- Structural Changes in a-Si : H during Annealing -- The Effects of Hydrogen Dose and Thermal Treatment on the Formation of Microsplits in Hydrogen Implanted GaAs -- Chapter 4. Hydrogen Complexes -- Theory of Hydrogen-Impurity Complexes in Semiconductors -- Nuclear Magnetic Resonance Investigation of H, H2 and Dopants in Hydrogenated Amorphous Silicon and Related Materials -- Investigation of Cadmium-Hydrogen Complexes in Silicon -- Structure and Reorientation Kinetics of Hydrogen Passivated Shallow Impurities in Silicon from Vibrational Spectroscopy -- Investigation of Hydrogen in Semiconductors by Nuclear Techniques -- Electronic Properties of Hydrogen-Related Complexes in Pure Semiconductors -- Light-Enhanced Reactivation of Passivated Boron in Hydrogen Treated Silicon -- Hydrogen in Phosphorus- and Carbon-Doped Crystalline Silicon -- Vibrational Properties of Hydrogen in Compound Semiconductors -- Unintentional Hydrogen Incorporation in Crystals -- First-Principles Calculations of Hydrogen in Bulk GaAs. , Plasma-Hydrogenated Microwave and Optoelectronic Devices -- The Effects of Anharmonicity on the Vibrations of Hydrogen Impurity Pairs in Gallium Arsenide -- Localised Vibrational Modes of Hydrogen-Impurity Complexes in GaAs -- Electronic Level of Hydrogen and Thermal Stability of Hydrogen Related Complexes in GaAs -- Hydrogen Neutralization of Dopant in P-Type Ga 0.47In 0.53As -- Chapter 5. Surfaces and Interfaces -- Hydrogen on Semiconductor Surfaces -- Hydrogen Chemisorption on Cleavage Faces of III-V Compounds -- Infrared Spectroscopy of Hydrogen on Silicon Surfaces -- Dissociation Effects of H and H2+ on Clean III-V Compounds -- Hydrogen at Semiconductor Grain Boundaries and Interfaces -- Hydrogen Induced Structure Changes of GaAs(1 0 0) Surfaces -- HREELS Investigation of the First Stage of Interaction of Atomic Hydrogen with GaAs(1 1 0) Surfaces -- Existence and Thermal Stability of Mono and Dihydride Phases on Si(1 1 1) and Ge( 1 1 1) Surfaces -- Hydrogen Plasma Treatment: Desorption of Atomic Hydrogen from Silicon Surfaces Studied By In-Situ Spectroscopic Ellipsometry -- Hydrogen Action in the Surface Space Charge Region of Highly Doped Silicon -- Reversible H2 Passivation of *Si ≡ Si3 Interface Defects in (1 1 1) Si/SiO2 -- Hydrogen Plasma Modification of Metal /GaAs Interface -- The Chemisorption of Hydrogen on Silicon and Silicon Carbide (1 0 0) Surfaces -- Surface Passivation of Boron Doped a-Si:H -- Hydrogen Pile-up at Interfaces between Differently Doped Layers of Amorphous Silicon -- Chapter 6. Hydrogen Incorporation and Defect Passivation -- Role of Hydrogen Atoms in Anodized Porous Silicon -- A Photoluminescence Study of the Effects of Hydrogen on Deep Levels in MBE Grown GaAlAs:Si -- Hydrogen Passivation of Vacancy-Related Centres in Silicon -- Incorporation of Hydrogen in CdTe and HgTe Epitaxial Layers Grown by MOCVD. , Passivation of Dislocations in Silicon by Hydrogenation -- Electroreflectance and Photoluminescence Measurement of Passivation by Hydrogenation in GaAs/AlGaAs Structures -- Picosecond Spectroscopy of Hydrogenated MBE-GaAs* -- In Situ Study of the Si-H Bond in a-Si : H Ultrathin Films -- Deposition of Amorphous Hydrogenated Semiconductors by Magnetron Assisted Silane Decomposition -- Boron Doped a-SiCx : H Films from B(C2H5)3/SiH4 -- List of Contributors -- Subject Index.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of plasma hydrogenation of Si doped, p-type GaAs crystalline samples to form infrared waveguides through acceptor passivation. Epilayers grown by liquid phase epitaxy were exposed to a deuterium plasma for ninety minutes at three different temperatures. Secondary-ion mass spectrometry (SIMS) analysis indicated that the deuterium concentrations in the crystals after plasma exposure were nearly equal to the acceptor level and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser coupling experiments at 1.15 μm showed optical waveguiding in each sample and lowest propagation losses were on the order of 35 dB/cm. At a wavelength of 1.523 μm, only the sample processed at the highest temperature exhibited laser guiding and losses were considerably higher.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1461-1466 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic hydrogen has been introduced from a plasma source into InAs layers grown by molecular beam epitaxy on GaAs substrates. It is shown that hydrogen diffuses very fast into this material. The presence of hydrogen modifies the electronic transport properties, the near-band-edge luminescence spectra, and the far-infrared reflectivity spectra. The most striking effect is that, unlike other III-V compounds, the free-carrier density increases by one order of magnitude after hydrogenation. These phenomena are reversible and thermal annealing restores the original properties of the samples. Finally, models are proposed to explain the experimental results.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1345-1349 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solubility of hydrogen in silicon doped GaAs has been investigated from deuterium diffusion experiments in buried silicon doped GaAs epilayers exposed to a deuterium plasma. The presence of silicon donors in the buried layer induces an increase of the solubility of hydrogen equal to the amount of active donors. Diffusion profiles after thermal annealing provide evidence that, in the buried doped layer, hydrogen is present at least in two forms: a mobile species, which is removed under annealing at 250 °C, 20 min, and a trapped form known to be Si-H complexes from infrared spectroscopic studies. The electron mobility of the annealed neutralized samples is systematically higher than in as-grown samples, for a given active donor concentration. For plasma conditions used for the fabrication of field effect transistors having a hydrogen neutralized active region, this holds true for buried layers protected by undoped GaAs cap layers as thin as 0.1 μm, then, the defects generated by the plasma are confined on a superficial layer less than 1000 A(ring).
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1723-1731 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deuterium diffusion profiles in GaAs doped with different acceptors of group II (Mg,Zn,Cd) or group IV (C,Ge) have similar characteristics even though the neutralization of acceptors measured at 300 K is not always efficient. Conductivity and Hall measurements have been used to study the electrical characteristics of hydrogenated p-type GaAs epilayers. The temperature dependence of the free-carrier concentration and hole mobility before and after hydrogenation shows that the neutralization of acceptors by atomic hydrogen leads to the elimination of the shallow acceptor states. Infrared-absorption lines associated with hydrogen-acceptor complexes are observed for all acceptors except magnesium. It is established that the microscopic structure of hydrogen-acceptor complexes depends on the acceptor site in the lattice.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1401-1406 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of intermixing on the apparent interface stress is studied in 〈111〉-textured dc-magnetron sputtered Au/Ni multilayers by use of two methods commonly used for determining interface stress. The method using profilometry and in-plane x-ray diffraction does not take intermixing into account and yields an apparent interface stress of −8.46±0.99 J m−2. However, observed discrepancies between model calculations and measured high-angle x-ray diffractograms indicate intermixing, and by use of the profilometry and sin2 ψ method the real interface stress value of −2.69±0.43 J m−2 is found. This method also reveals a significant and systematic change of the stress-free lattice parameter of both constituents as a function of modulation period which is shown to account for the difference between the two findings. The method using in-plane diffraction is thus shown to be inapplicable to interface stress determinations in systems exhibiting a modulation period-dependent stress-free lattice parameter. Finally, a deviation of the interface stress in the Au/Ni sample with the smallest modulation period as compared to specimens with larger bilayer lengths is observed to be concurrent with a significant decrease in the interface roughness measured by x-ray reflectivity, which suggests that the deviation is of geometrical origin. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5429-5433 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heteroepitaxial growth of TiN on MgO(001), deposited by reactive magnetron sputtering, has been studied in situ. Using real-time specular x-ray reflectivity, layer-by-layer growth was observed, with the surface roughening decreasing with an increase in the deposition temperature. Higher temperatures also resulted in lower growth rates. The film thickness was measured with specular x-ray reflectivity. Using off-plane Bragg–Brentano as well as grazing incidence in-plane wide angle scattering, the pseudomorphic growth of TiN to the underlying MgO(001) was established. Transmission electron microscopy reveals atomic planes passing through the MgO–TiN boundary, thus confirming heteroepitaxial growth. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2300-2304 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly carbon-doped Ga0.47In0.53As layers grown by chemical beam epitaxy have been exposed to a deuterium plasma. Deuterium diffusion profiles reflect very strong C–D interactions. Concerning electronic transport properties, from p-type when as-grown, these GaInAs samples turn to n-type after plasma exposure. Annealings of deuterated layers have also been performed. They show that temperatures as high as 450 °C must be reached before p-type conductivity is fully restored in the material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3186-3193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs and GaAlAs layers doped with different group VI donors (S, Se, Te) have been exposed to hydrogen plasma. By secondary ion mass spectroscopy, it is shown that, as in Si-doped materials, the hydrogen diffusion strongly depends on the AlAs content. Electronic transport measurements indicate that after hydrogen diffusion the electron concentration systematically decreases and their mobility increases, demonstrating clearly the passivation of the group VI donors by hydrogen. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2791-2793 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the behavior of atomic hydrogen (or deuterium) introduced by plasma in highly doped GaInAs:Zn epitaxial layers. Different experimental techniques have been used: secondary-ion mass spectrometry (SIMS) profiling, electronic transport measurements, and infrared absorption spectroscopy. After hydrogenation the concentration of free holes is drastically reduced. SIMS profiles follow erfc functions. This corresponds to weak hydrogen-dopant interactions. This weakness is confirmed by the annealing experiments from which a low dissociation energy can be estimated.
    Type of Medium: Electronic Resource
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