Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3507-3509
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5×104 cm−1 is determined for 800 nm excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron–hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126689
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