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  • 1
    Online Resource
    Online Resource
    Semiconductor Nanostructures for Optoelectronic Devices : Processing, Characterization and Applications. (2012)
    Berlin, Heidelberg :Springer Berlin / Heidelberg,
    Details
    Keywords: Nanostructured materials. ; Semiconductors. ; Nanotechnology. ; Electronic books.
    Description / Table of Contents: This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.
    Type of Medium: Online Resource
    Pages: 1 online resource (347 pages)
    Edition: 1st ed.
    ISBN: 9783642224805
    Series Statement: NanoScience and Technology Series
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=885149
    Language: English
    Note: Intro -- Semiconductor Nanostructures for Optoelectronic Devices -- Preface -- Contents -- Contributors -- 1 Vapor-Liquid-Solid Growth of Semiconductor Nanowires -- 2 Catalyst-Free Metal-Organic Vapor-Phase Epitaxy of ZnO and GaN Nanostructures for Visible Light-Emitting Devices -- 3 III-V Semiconductor Nanowires on Si by Selective-Area Metal-Organic Vapor Phase Epitaxy -- 4 Synthesis and Properties of Aluminum Nitride Nanostructures -- 5 Semiconductor Nanowire Heterostructures: Controlled Growth and Optoelectronic Applications -- 6 Hybrid Semiconductor Nanostructures with GrapheneLayers -- 7 Microstructural Properties of Nanostructures -- 8 Luminescence Characterizations of SemiconductorNanostructures -- 9 Lasing Characteristics of Single and Assembled Nanowires -- 10 Nanophotonic Device Application Using Semiconductor Nanorod Heterostructures -- 11 Semiconductor Nanowires for Solar Cells -- Index.
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  • 2
    Electronic Resource
    Electronic Resource
    Time-resolved and time-integrated photoluminescence in ZnO epilayers grown on Al2O3(0001) by metalorganic vapor phase epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1924-1926 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on photoluminescence (PL) spectra of ZnO films grown by low pressure metalorganic vapor phase epitaxy. For PL measurements, high quality ZnO thin films were epitaxially grown on Al2O3(0001) substrates. Time-integrated PL spectra of the films at 10 K clearly exhibited free A and B excitons at 3.376 and 3.382 eV and bound exciton peaks at 3.360, 3.364, and 3.367 eV. With increasing temperature, intensities of the bound exciton peaks drastically decreased and a free exciton peak was dominant above 40 K. Furthermore, time-resolved PL measurements at the free exciton peak were carried out at room temperature. The decay profiles were of double-exponential form, and the decay time constants of 180 ps and 1.0 ns were obtained using a least-square fit of the data. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461051
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  • 3
    Electronic Resource
    Electronic Resource
    Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 658-660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 °C were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2Pr) and the coercive field (Ec) were in the range of 26–28 μC/cm2and 50–75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5×1010 read/write switching cycles at a frequency of 1 MHz. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333686
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  • 4
    Electronic Resource
    Electronic Resource
    Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1−xMgxO(0≤x≤0.49) thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2022-2024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality Zn1−xMgxO(0.00≤x≤0.49) thin films were epitaxially grown at 500–650 °C on Al2O3(00⋅1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Å and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405811
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen complexes in epitaxial BaTiO3 thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen complexes in epitaxial BaTiO3 thin films are investigated using Fourier transform infrared spectroscopy. Both undoped and Er-doped layers were grown using low-pressure metal–organic chemical vapor deposition. From the infrared spectra of the undoped and Er-doped films grown at 750–800 °C, infrared absorption was observed at 3486 cm−1. The absorption peak is attributed to a vibrational mode of O–H in BaTiO3. Moreover, the Er-doped layers showed additional absorption peaks at 2905 and 2964 cm−1. The peaks are ascribed to the vibrational modes of C–H complexes in the Er-doped layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119529
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  • 6
    Electronic Resource
    Electronic Resource
    Carbon–hydrogen complexes in vapor phase epitaxial GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 357-359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon–hydrogen complexes in undoped and Mg-doped epitaxial GaN films have been investigated using Fourier transform infrared spectroscopy. Infrared absorption peaks in the Mg-doped material were observed at 2853, 2923, and 2956 cm−1. The absorption peaks are attributed to the symmetric and asymmetric vibrational stretching modes of C–H in CHn (n=1–3) defect complexes. The carbon–hydrogen complexes were unintentionally incorporated during the Mg-doped GaN film growth. The absorbances of the vibrational modes increased for heavily Mg-doped GaN. Upon annealing at 700 °C for 30 min under nitrogen environment, the complexes decomposed. The origin of the carbon–hydrogen complexes is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118388
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  • 7
    Electronic Resource
    Electronic Resource
    Compensation of n-type GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3028-3030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compensation in Se-doped n-type GaN prepared by atmospheric pressure metalorganic vapor phase epitaxy was studied. Hydrogen selenide was the dopant source. The carrier concentration is linearly proportional to the H2Se pressure for low partial pressures and proportional to the cube root at high partial pressures. Carrier concentrations as high as 6×1019 cm−3 at 295 K were achieved. From Hall-effect measurements, the Se-doped GaN was shown to be highly compensated even for heavily n-type material. The defects responsible for the compensation were investigated using low-temperature photoluminescence. A strong acceptor-related transition at 3.447 eV at 15 K was observed in the heavily doped layer. The observed doping dependence of Se in GaN is attributed to compensation by triply charged vacancies which is consistent with recent theoretical calculations on defect formation in n-type material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116828
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  • 8
    Electronic Resource
    Electronic Resource
    Deep level defects in n-type GaN compensated with Mg (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3769-3771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level defects in n-type epitaxial GaN compensated with Mg were measured using photocapacitance spectroscopy on Schottky barrier diodes. The doped GaN was prepared by atmospheric pressure metalorganic vapor phase epitaxy using bis(cyclopentadienyl)magnesium as the dopant source. The Mg-doped GaN films were n type as determined by Hall-effect measurements. Addition of magnesium resulted in the formation of a series of deep centers with optical threshold energies of 1.0, 1.2, 1.8, and 3.1 eV. Upon annealing the Mg compensated GaN in nitrogen at 850 °C the midgap levels disappeared and only the trapping level at 3.1 eV remained. The midgap levels are ascribed to Mg dopant complexes which may be responsible for low doping efficiency of Mg in the as-grown, doped GaN as well as its semi-insulating behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116001
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  • 9
    Electronic Resource
    Electronic Resource
    Polarized Raman scattering of epitaxial PbTiO3 thin film with coexisting c and a domains (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3165-3167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of the orientation of ferroelectric domains on the characteristics of polarized Raman spectra were studied using an epitaxially grown PbTiO3 thin film in which the c-axis oriented domains coexist with the a-axis oriented domains on MgO (001). To obtain polarized spectra for both two distinctive c and a domains, we have employed scattering configurations in which the relevant phonon wave vector, k, is perpendicular to the c axis of the tetragonal unit cell. Compared with the mode frequencies of single-crystal PbTiO3, a softening of the E(TO) phonons was evident for both c and a domains, suggesting the presence of a strong tensile film stress. In addition to this, we observed a splitting of the degenerate "silent" mode into two distinctive B1 and E modes in an epitaxially grown film on MgO (001). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473864
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  • 10
    Electronic Resource
    Electronic Resource
    Fatigue-free samarium-modified bismuth titanate (Bi4−xSmxTi3O12) film capacitors having large spontaneous polarizations (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3137-3139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metalorganic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2Pr) and the nonvolatile charge as compared to those of the Bi4−xLaxTi3O12 (x=0.75) film capacitor, recently known as the most promising candidate for nonvolatile memories. The 2Pr value of the BSmT capacitor was 49 μC/cm2 at an applied voltage of 10 V while the net nonvolatile switching charge was as high as 20 μC/cm2 and remained essentially constant up to 4.5×1010 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge–retention characteristics with its sensing margin of 17 μC/cm2 and a strong resistance against the imprinting failure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415353
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