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  • 1
    Electronic Resource
    Electronic Resource
    The effect of strain on hot-electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5454-5459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo methods are used to model the electron and hole high-field transport in both unstrained and compressively strained silicon and silicon-germanium alloy. The data are analyzed to determine in what way the thermal noise properties of the carriers are affected by compressive, in-plane strain. Results include the longitudinal diffusion coefficient, the longitudinal noise temperature, and the longitudinal noise spectral density, for electric fields in the range of 0–20 kV/cm. The results are qualitatively similar for silicon with 1% compressive biaxial strain and for Si0.9Ge0.1/Si(001). The effects of strain are found to be more pronounced for electrons than for holes and are primarily related to changes in the conductivity effective mass. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359660
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  • 2
    Electronic Resource
    Electronic Resource
    Calculation of electron and hole impact ionization coefficients in SiGe alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6773-6782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon–germanium alloys offer a system where the ratio of the electron impact ionization coefficient (α) and hole impact ionization coefficient (β) varies from a value larger than unity (in high silicon content alloys), to a value smaller than unity (in high germanium content alloys). We report results for α and β for this alloy system. The electron results are based on a multivalley nonparabolic band structure. The hole results are based on a six-band k⋅p model for low energies coupled to an eight-band model for high energies. We find that for the alloy Si0.4Ge0.6, α∼β. Alloy scattering is found to play an important role in determining the impact ionization coefficient. For compositions around Si0.5Ge0.5, the strong alloy scattering is found to suppress the impact ionization coefficient. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363746
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  • 3
    Electronic Resource
    Electronic Resource
    Hot hole relaxation in the SiGe system (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2790-2792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A general formalism is presented to study hot carrier relaxation in the valence band of strained and unstrained semiconductors. The approach is based on a six-band k⋅p description of the valence band and an anisotropic Monte Carlo method. We show the results of our studies for the Si–Ge system. Carriers are initially injected in the split-off band and the carrier distribution is followed in time. Results are presented for energy-dependent energy relaxation time. The relaxation times for Si are about 10−13 s while those for Ge are an order of magnitude higher. To study the effect of biaxial strain produced through epitaxy on energy relaxation times we present results for Si0.8Ge0.2 on a {100} silicon substrate. This work is of relevance to the interpretation of pump-probe experiments, which are primarily dependent on the relaxation of the average of the carrier energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361112
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  • 4
    Electronic Resource
    Electronic Resource
    High power laser semiconductor interactions: A Monte Carlo study for silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1807-1812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we use Monte Carlo methods to study the interaction of high power laser pulses with electrons in the conduction band of semiconductors. The laser field is represented by a sinusoidal electric field which tends to cause an oscillatory motion in the electrons. The scattering of electrons from the lattice force the electrons to lose phase coherence with the field. The approach is applied to silicon. We use the approach to examine the carrier energy distribution and material breakdown due to the transfer of energy from the laser to the electrons followed by impact ionization. The impact ionization coefficient, α, and its dependence on the laser frequency and field strength is examined and compared to the values in a dc field. In general, the ac value is smaller than the dc value, but at low frequencies and high field strengths, the ac impact ionization coefficient approaches the dc value at the same rms field value. The importance of collisions in the energy transfer process is elucidated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364037
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  • 5
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    Conversion of cell-survival activity of Akt into apoptotic death of cancer cells by two mutations on the BIM BH3 domain (2015)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2015-07-03
    Description: Conversion of cell-survival activity of Akt into apoptotic death of cancer cells by two mutations on the BIM BH3 domain Cell Death and Disease 6, e1804 (July 2015). doi:10.1038/cddis.2015.118 Authors: J-S Kim, B Ku, T-G Woo, A-Y Oh, Y-S Jung, Y-M Soh, J-H Yeom, K Lee, B-J Park, B-H Oh & N-C Ha
    Electronic ISSN: 2041-4889
    Topics: Biology , Medicine
    Published by Nature Publishing Group (NPG)
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  • 6
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    Involvement of decreased hypoxia-inducible factor 1 activity and resultant G1–S cell cycle transition in radioresistance of perinecrotic tumor cells (2013)
    Nature Publishing Group (NPG)
    In: Oncogene
    Details
    Publication Date: 2013-04-19
    Description: Involvement of decreased hypoxia-inducible factor 1 activity and resultant G1–S cell cycle transition in radioresistance of perinecrotic tumor cells Oncogene 32, 2058 (18 April 2013). doi:10.1038/onc.2012.223 Authors: Y Zhu, T Zhao, S Itasaka, L Zeng, C J Yeom, K Hirota, K Suzuki, A Morinibu, K Shinomiya, G Ou, M Yoshimura, M Hiraoka & H Harada
    Keywords: radiation therapyradioresistancetumor microenvironmentshypoxiahypoxia-inducible factor 1 (HIF-1)
    Print ISSN: 0950-9232
    Topics: Medicine
    Published by Nature Publishing Group (NPG)
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