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  • 1
    Electronic Resource
    Electronic Resource
    The ultimate frequency response and time evolution of resonant tunneling in double-barrier structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3098-3105 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to treating the problem of the frequency response of tunneling barriers is demonstrated. The Schrödinger equation for an incident monoenergetic electron is solved in the case of a double-barrier structure with an applied potential oscillating at an arbitrary frequency. The details of the tunneling in the transient stage and the following steady state, as well as the charging and discharging processes around the structure, are revealed in the high-frequency modulation regime. We find that the linear frequency response for a typical fast structure rolls off above 1.5 THz with a 1/f dependence. An enhancement in the nonlinear frequency response at 770 GHz is observed for a single electron tunneling. From the motion of the wave front in the structure, we find that the phase transit time across the structure ranges from 140 to 40 fs decreasing with frequency. Generation of the transmitted pulses with an energy spread about (h-dash-bar)ω where ω is the angular modulation frequency is observed. This corresponds to an emission and absorption of a quantum of (h-dash-bar)ω.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341549
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  • 2
    Electronic Resource
    Electronic Resource
    Lateral coherence properties of broad-area semiconductor quantum well lasers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 66-68 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337629
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  • 3
    Electronic Resource
    Electronic Resource
    InGaAsP p-i-n photodiodes for optical communication at the 1.3-μm wavelength (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4730-4732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation and properties of Cd-diffused p-n homojunction InGaAsP photodiodes designed specifically for operation at the 1.3-μm wavelength are described. At a reverse bias of 10 V, the dark current of these diodes was as low as 15 pA. The peak responsivity at 1.3-μm wavelength was 0.7 A/W. An impulse response (full width at half maximum) of 60 ps and a 3-dB bandwidth of 5.5 GHz were achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336247
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  • 4
    Electronic Resource
    Electronic Resource
    Resonant tunneling through low dimensional quantum structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3598-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling mechanism in zero- and one-dimensional quantum structures is studied. Several new results, peculiar to low dimensions, are predicted. We find that subband mixing and multichannel tunneling induce the appearance of new tunneling channels with unusual interference patterns, and allow for longer lifetime of the resonances at higher energies in various channels. It is shown that in low dimensions, there exists a critical size of the structure below which the resonance nature of the tunneling process is diminished. In zero and one dimensions, there exists a critical magnitude of the confinement potential, below which there are no resonances in the transmission function for any size of the well. Negative differential resistance and other phenomena related to the resonance characters of the tunneling will not appear in this case. We also develop a generalized transfer matrix method that takes into account subband mixing; this formalism can be used to describe any transport problem in low dimensions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352299
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  • 5
    Electronic Resource
    Electronic Resource
    Optically controlled resonant tunneling in a double-barrier diode (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3384-3386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348515
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of nonuniform photon distribution on high speed response in semiconductor distributed feedback lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3706-3708 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high speed performance of distributed feedback (DFB) lasers, with nonuniform longitudinal photon density distributions, has been analyzed. It was found that the relaxation resonance frequency and damping rate of the lasers depended on the distribution of traveling electric fields in the lasers. A two section DFB laser was used to demonstrate the effects of spatial hole burning on the high speed response of the DFB laser. By adjusting the photon density distribution in the laser through nonuniform current injection, the resonance frequency and damping rate of the two section DFB laser can be changed even if the output optical power is kept constant. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115356
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  • 7
    Electronic Resource
    Electronic Resource
    Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2752-2754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of ultralow threshold current GaAs and InGaAs quantum well lasers at cryogenic temperatures has been studied. In particular the threshold current Ith and lasing wavelength of GaAs and strained InGaAs lasers have been measured as a function of temperature from 300 down to 5 K. Ith can in both lasers be characterized by a linear function of temperature up to 200 K, with a significantly (2.5×) larger dIth/dT for the GaAs laser. We measured a minimum threshold current of 120 μA for the GaAs laser and 165 μA for the InGaAs laser at 5 K. We derive a simple expression for the transparency carrier density as a function of temperature and effective masses to explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104775
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  • 8
    Electronic Resource
    Electronic Resource
    On chirp control in two section distributed feedback semiconductor lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2913-2915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of frequency chirp of a two section distributed feedback (DFB) laser, which is under large signal modulation, is studied while the optical intensity and optical modulation depth are fixed. It is found that the measured time-averaged power spectrum of the laser changes from one of a predominantly negative frequency chirp (red shift) to positive chirp (blue shift) as the injection current distribution between the two sections is changed. Our theoretical calculation of frequency chirp in DFB lasers based on the Green's function method explains the shift of the frequency chirp in the two section DFB laser. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114840
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  • 9
    Electronic Resource
    Electronic Resource
    Optical switching of a new middle trace in an optically controlled parallel resonant tunneling device−Observation and modeling (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1548-1550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical switching of a new middle trace observed in an optically controlled parallel resonant tunneling (OPT) device is demonstrated. A circuit model for the OPT is developed. The circuit model satisfactorily explains the existence of the middle trace and its optical switching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105174
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  • 10
    Electronic Resource
    Electronic Resource
    Theoretical and experimental investigation of conversion of phase noise to intensity noise by Rayleigh scattering in optical fibers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1156-1158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conversion of laser phase noise to intensity fluctuation noise in optical fibers due to mixing with Rayleigh scattered light is considered. A theory combining the laser quantum phase dynamics and the statistical scattering in the fiber leads to simple expressions for the spectral densities of the intensity fluctuations in a number of generic cases. These are compared with experiments involving distributed feedback semiconductor lasers and low-loss fibers with lengths up to 20 km.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105541
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