ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Interfacial reactions of Cr, Cr-Si, and Cr/Si films on GaAs substrate, in the temperature range 200–800 °C, have been investigated using a combination of x-ray diffraction, transmission electron microscopy, Auger electron spectroscopy, and electrical measurements. Chromium starts to react with GaAs at 500 °C by formation of CrAs and Cr3Ga compounds. At 600 °C, Cr3Ga transforms to Cr3Ga4, and the reaction products are Cr3Ga4, CrGa4, and CrAs at 700–800 °C with CrGa4 and CrAs being the final dominant phases at 800 °C. The compounds formed are consistent with the phase diagram. The surface region of the reacted Cr films is richer in Cr-Ga compounds, while the interface region is richer in CrAs compound. The Schottky barrier heights of Cr/n-GaAs diodes increase after annealing at temperatures below 400 °C, however, the diodes deteriorate severely at higher temperatures. Annealing of the codeposited Cr-Si and layer-deposited Cr/Si films results in the formation of CrSi2 at temperatures above ∼600 °C. No interfacial reaction between CrSi2 film and GaAs was observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350184
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