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  • 1
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 54 (1998), S. 9-11 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6719-6721 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is presented for the blocking of Cu diffusion into SiO2 and Si by Ta and Ta/W barriers. The anneal was performed at 450 °C for 30 min. Here, W is rejected as a potential barrier for Cu technology. A Cr layer as thin as 200 A(ring) is shown to limit diffusion into Si to ∼600 A(ring). The study also demonstrates the utility and versatility of secondary ion mass spectrometry for evaluating potential diffusion barriers, and the need for such corroborative characterization in light of the lesser sensitivity of Rutherford backscattering spectroscopy.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1392-1396 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of Ag from epitaxial layers into Si(111) is studied under an anneal of 450–500 °C using the secondary ion mass spectrometry depth profiling tool. The measurements yielded values of the diffusion constant (0.80–1.6 × 10−15 cm2/s) which fall short of literature values extrapolated from higher-temperature Arrhenius laws. Diffusion of Ag into SiO2 was also measured directly. The observed diffusivity of 1.0 × 10−15 cm2/s is a factor of ∼ 105 smaller than expected from previous determinations of the diffusivity of Ag+ in SiO2 obtained from anneals in forming gas. The discrepancy may be due to changes in the local electrostatic environment in the absence of acceptor levels in SiO2 from dissolved gases which are absent in vacuum.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 773-777 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of room-temperature epitaxy of vapor-deposited thin Ag films on Si(111) accomplished under conventional vacuum conditions is reported. Epitaxy was also observed at 350 °C. The films were deposited using a partially ionized beam deposition system, and were typically 1500 A(ring) thick. Epitaxy was confirmed via pole-figure analysis. Scanning electron microscopy revealed excellent surface flatness even for the room-temperature films. Contrary to previous observations, the growth was found to proceed by the layer mode, even at the elevated temperature. This change in morphology is attributed to the enhanced density of nucleation sites due to the energetic ions.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3619-3624 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu thin films have been deposited on Si(111) substrate using partially ionized deposition technique in which the self-ions, i.e., the ions derived from the depositing materials themselves, are being used to concurrently bombard the substrate surface during thin film growth. The ion percentage in the deposition beam is in the range from 0% to 5% with the ion energy varying between a few eV and several keV. The Si(111) substrates are chemically cleaned by a RCA cleaning process before loading into the vacuum chamber of deposition. No in situ cleaning of the substrate surface is performed prior to deposition. A reduction of impurities such as oxygen, carbon, and hydrogen at the Cu/Si interface is observed as a function of the ion bombardment parameters using secondary-ion mass spectrometry. The estimates of the sputtering cross section of oxygen, carbon and hydrogen at the Cu/Si interface by Cu ions and their energy dependence are discussed in the framework of mechanisms of the impurity sputtering by low-energy ions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3313-3316 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 film of 1500-A(ring) thickness has been grown by a conventional thermal dry oxidation process on commercial Si(111) and Si(100) wafers. A secondary-ion mass spectrometry study of the SiO2/Si structure showed that a gettering of Cu atoms, which were present in the Si wafers as residual impurities, has occurred at the SiO2/Si interface due to the thermal dry oxidation process. The areal concentration of the Cu atoms at the interface has been found to depend on the Cu concentration in the Si wafers. Areal concentrations in order of 1×1012/cm2 were measured at the interfaces. Facilitated by the high diffusivity of Cu in SiO2 and Si, the gettering is thermodynamically driven by the low solid solubility of Cu, either in SiO2 at the temperature range up to the oxidation temperature, or in Si at low temperatures as the wafers cool down. The defects generated at the SiO2/Si interface provide the nucleation sites for the Cu gettering.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK; Malden, USA : Blackwell Publishing Ltd/Inc.
    Wound repair and regeneration 13 (2005), S. 0 
    ISSN: 1524-475X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Previous studies have shown that cyclic mechanical stretching exerts anti-inflammatory effects on rabbit chondrocytes. But whether mechanical stretching has similar effects on human tendon fibroblasts are not known. This study therefore aimed to test the hypothesis that cyclic mechanical stretching regulates IL-1β induced COX-2 gene expression in a stretching magnitude-dependent manner. In custom-made silicone dishes, human patellar tendon fibroblasts (HPTFs) were grown on microgrooved culture surfaces, with which the shape and organization of HPTFs in vivo were closely mimicked. To induce inflammatory responses in HPTFs, 10 pM of IL-1β was added to the culture medium. A 4% or 8% cyclic uniaxial stretching was then applied to silicone dishes for 4 hrs using a custom-design stretching apparatus. After the end of stretching, total RNA of stretched and nonstretched tendon fibroblasts was collected, and RT-PCR was performed for measuring COX-2 mRNA expression levels. We found that tendon fibroblasts subjected to 4% stretching decreased COX-2 mRNA expression level by 20%(p = 0.0002; n = 6) compared to that of nonstretched, IL-1β-treated cells. However, cells subjected to 8% stretching showed a 39% increase (p = 0.007, n = 6) in COX-2 mRNA expression. Thus, the results of this study suggest that small stretching (4%) has anti-inflammatory effects on HPTFs in a mildly inflammatory environment such as that induced by 10 pM of IL-1β. In contrast, large stretching (8%) may amplify inflammatory responses of tendon fibroblasts. Therefore, physical therapy with low levels of tendon stretching may be beneficial in reducing mild tendon inflammation.Supported by the Arthritis Investigator Award and NIHAR049921 (JHW)
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5759-5764 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a peel strength of larger than 70 g/mm adhesion can be achieved between Cu and Parylene-N surfaces using the partially ionized beam (PIB) deposition technique while the conventional deposition techniques such as thermal evaporation, e-beam evaporation, and sputtering give no measurable adhesion. With the PIB process, neither an adhesion enhancement layer nor substrate pretreatment is required. In the PIB deposition, up to 5% of self-ions and 3 kV substrate bias were used during deposition. Secondary-ion-mass spectroscopy revealed a Cu–Parylene-N intermixed layer located at the Cu/Parylene-N interface. It is proposed that the mechanical interlocking provided by the graded interface region may play a role for the observed adhesion enhancement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3605-3609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spontaneous emission from an InGaAs/GaAs single-quantum well surrounded by AlAs/GaAs distributed Bragg reflectors (DBR) under the near-resonance condition between the exciton level and the confined optical mode is investigated. Under such conditions, on-axis spontaneous emission enhancement at the cavity resonant wavelength is clearly identified. The strength and character of the interaction of the exciton with the confined optical mode is determined by the dependence of photoluminescence spectra on the reflectivity of the DBR. Temperature dependence of the enhanced spontaneous emission shows the cavity resonant wavelength shifts at 0.85 A(ring)/°C around room temperature. An increase of emission intensity at the cavity resonant wavelength with increasing temperature is also observed, which can be related to the increase of the interaction between excitonic emission and cavity mode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2258-2263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear optical films were vapor deposited onto Si(100) and indium-tin-oxide-coated glass. These films are guest-host-type polymer and showed electrooptical (EO) properties after poling. The host polymer is Teflon AF 1600 (AF) and the guest is dimethylaminonitrostilbene (DANS). Deposition is done by coevaporation. EO effects were found in films containing 5–25 vol % DANS. The EO coefficient r33, is found to be a function of composition, poling temperature, and cooling rate during poling. The highest EO coefficient obtained is 2.4 pm/V from a film with 10 vol % DANS and poled at a temperature of 130 °C. Very little or no EO effects were found for films with (approximately-greater-than)25 vol % DANS. This is found to be a result of phase separation and subsequent crystallization of DANS. A decrease of EO effect at higher poling temperature is possibly a result of thermal disorder which was "frozen'' during cooling. DANS was also found to react with Teflon AF 1600 at a higher DANS concentration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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