Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 1573-1575
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have calculated the 10-μm intersubband absorptoin in quantum wells made of the silicon-based system, Si/Si1−xGex. The necessary details of the effective-mass anisotropy are included in our analysis. We find that it is readily possible to achieve an absorption constant of order of 104 cm−1 in Si quantum wells with current doping technology. For [110] and [111] growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341788
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