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  • 1
    Electronic Resource
    Electronic Resource
    Structural, optical, and electrical properties of epitaxial chalcopyrite CuIn3Se5 films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1503-1510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal CuIn3Se5 epitaxial films have been synthesized on GaAs(001) by a hybrid sputtering and evaporation technique. The microstructure, microchemistry, and selected electrical and optical properties of the films have been investigated by scanning electron microscopy, energy dispersive x-ray spectroscopy, transmission electron microscopy, cathodoluminescence, optical absorption and reflection, and four-point probe resistivity measurements. The results showed that the CuIn3Se5 crystals have an ordered point defect structure, a band gap of ≥1.18 eV, an optical absorption coefficient of about 15 000 cm−1 at a photon energy of 1.35 eV, and a film resistivity of (approximately-greater-than)105 Ω cm. The results suggest the presence of band tails giving rise to subgap radiative recombination and absorption. Antiphase domain boundaries, stacking faults, and nanotwins were observed in the epitaxial layers and were reduced in number by rapid thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357725
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  • 2
    Electronic Resource
    Electronic Resource
    Defect ordering in epitaxial α-GaN(0001) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8195-8197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357873
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  • 3
    Electronic Resource
    Electronic Resource
    Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 240-247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 has been investigated using in situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy, electron-energy-loss spectroscopy, and scanning tunneling microscopy, combined with post-deposition high-resolution cross-sectional transmission electron microscopy. The layers were deposited using repetitive cycles consisting of saturation Si2H6 dosing at room temperature, followed by annealing for 1 min at 550 °C. Film growth was observed to proceed via a mixed Stranski–Krastanov mode. Single-step-height two-dimensional growth was obtained for nominal Si deposition thicknesses tSi up to (approximately-equal-to)1.5 monolayers (ML). However, the upper layer remained essentially pure Ge which segregated to the surface through site exchange with deposited Si as H was desorbed. At higher tSi, the Ge coverage decreased slowly, the surface roughened, and two-dimensional multilayer island growth was observed for tSi up to (approximately-equal-to)7.5 ML, where bulk reflections in RHEED patterns provided evidence for the evolution of three-dimensional island formula.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355890
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  • 4
    Electronic Resource
    Electronic Resource
    Au-mediated low-temperature solid phase epitaxial growth of a SixGe1−x alloy on Si(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3094-3102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of microstructure during Au-mediated solid phase epitaxial growth of a SixGe1−x alloy film on Si(001) was investigated by in situ sheet resistance measurements, x-ray diffraction, conventional and high-resolution transmission electron microscopy, energy dispersive x-ray spectroscopy, and Rutherford backscattering spectrometry. Annealing amorphous-Ge/Au bilayers on Si(001) to temperatures below 120 °C caused changes primarily in the microstructure of the Au film. Near ≈130 °C, Ge from the top layer diffused and crystallized along the grain boundaries of Au. The Ge that had reached the Au/Si (001) interface mixed with Si from the substrate, to form epitaxial SixGe1−x islands on Si (001). Si from the substrate had dissolved into Au before entering the growing epitaxial islands. Meanwhile, the Au that was displaced by Ge that filled the Au grain boundaries, diffused into the top layer along columnar voids in the amorphous Ge film. With increasing temperature, more Au was displaced to the top by the flux of Ge towards the substrate, facilitating further epitaxial growth and the coalescence of epitaxial SixGe1−x islands. At 310 °C, the initial Au film was displaced completely to the top by a laterally continuous SixGe1−x epilayer of uniform composition (x≈0.15). The epilayer thickness was limited by that of the initial Au film. Twins and residual amounts of Au trapped near the SixGe1−x/Si(001) interface were the predominant defects observed in the completely strain-relaxed SixGe1−x epilayer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361252
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  • 5
    Electronic Resource
    Electronic Resource
    Evolution of microstructure in nanocrystalline Mo-Cu thin films during thermal annealing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2435-2440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of microstructure in Mo-Cu thin films during annealing has been investigated by in situ sheet resistance measurements, ex situ x-ray diffraction, and in situ hot-stage as well as conventional transmission electron microscopy. Mo-Cu thin films, deposited on various glass substrates by magnetron sputtering at ∼30 °C, were supersaturated solid solutions of Cu in Mo with a nanocrystalline microstructure. The as-deposited films had large compressive residual stresses owing to the low homologous deposition temperature and low Ar pressure during deposition. Annealing results showed two distinct sets of microstructural changes occurring in the temperature ranges between ∼300 and 500 °C, and ∼525 and 810 °C. In the lower-temperature range, anisotropic growth of nanocrystallites was accompanied by stress relaxation without any observable phase separation. At temperatures greater than ∼525 °C, the metastable solid solution collapsed and Cu precipitated at the grain boundaries. Increasing temperature resulted in the coarsening of Cu precipitates and simultaneous growth of Mo grains. At temperatures greater than ∼700 °C, phase separation and grain growth approached completion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360756
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  • 6
    Electronic Resource
    Electronic Resource
    Critical epitaxial thicknesses for low-temperature (20–100 °C) Ge(001)2×1 growth by molecular-beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2512-2516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Ge(001) by molecular-beam epitaxy at temperatures Ts between 20 and 100 °C, and deposition rates of 0.5 and 1 A(ring) s−1, was investigated using a combination of in situ reflection high-energy electron diffraction and post-deposition cross-sectional transmission electron microscopy. All films consisted of three zones beginning with a defect-free epitaxial layer of thickness t1 in which ln(t1)∝(1/Ts). The second zone was a narrower intermediate layer containing {111} stacking faults and microtwins, while the third zone was amorphous. An atomistic growth model is proposed to explain the observed morphological breakdown during low-temperature growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354691
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  • 7
    Electronic Resource
    Electronic Resource
    Manipulation of the Ti/Si reaction paths by introducing an amorphous Ge interlayer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 561-563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evolution of the Ti/a-Ge/Si trilayer reactions has been investigated using transmission electron microscopy and Auger electron spectroscopy. Instead of amorphous phase formation, as usually observed in the Ti/Si bilayer reaction, the crystalline Ti6Ge5 is the first phase observed during the reaction. Preceding the equilibrium C54-Ti(Si,Ge)2, a substitutional solid solution type C49-Ti(Si,Ge)2 forms upon annealing at 550–600 °C, regardless of the replacement of amorphous phase by the crystalline phase. The C49-to-C54 polymorphic transformation occurs at ∼650 °C. The reaction path is also correlated with the change in film resistance obtained from a four-point sheet resistance measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113019
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