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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy of Co on Cu(1 1 17) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 988-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-plane magnetic anisotropy of ultra-thin Co films, epitaxially grown on Cu(1 1 17), was determined in situ by means of the magneto-optic Kerr effect down to thicknesses as low as 2 monolayers. Uniaxial and biaxial anisotropy contributions were observed. At room temperature, the uniaxial component is dominant and the easy axis of magnetization is parallel to the step edges. Above 4 monolayers the magnetic anisotropy exhibits a thickness dependence which can be described by volume and interface contributions. For thinner films a pronounced deviation from that behavior is found. The anisotropy drops abruptly by one order of magnitude below 3 monolayers. Thickness dependent relaxations are proposed as driving forces for that behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360884
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  • 2
    Electronic Resource
    Electronic Resource
    High-resolution study of magnetization and susceptibility by spin-polarized scanning tunneling microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6475-6477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present static measurements of the domain structure and dynamic results on domain wall motion and local susceptibility obtained by spin-polarized scanning tunneling microscopy. The topography and the magnetic structure of the sample are recorded simultaneously with down to 10 nm resolution. With this technique, domain wall movement on Co(0001) is studied in situ. In some cases, the magnetization of the sample is locally influenced by the stray field of the tip. Measuring higher harmonics in the tunneling current allows one to quantify this influence and measure magnetic susceptibilities on similar scales. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372742
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  • 3
    Electronic Resource
    Electronic Resource
    Single-crystal magnetotunnel junctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 509-511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial single-crystal magnetotunnel junctions using Fe(001) substrates, MgO(001) spacers and Fe top electrodes. We have used scanning tunneling microscopy and atomic force microscopy to measure the tunneling characteristics as a function of position and demonstrated that local tunneling can be obtained such that the buried MgO can be characterized with nm resolution. Local I(V) curves revealed that most of the area had intrinsic tunneling properties corresponding to the proper MgO tunneling barrier. A small fraction of the scanned areas showed localized spikes in the tunneling current which are most likely caused by defects in the MgO. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342778
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  • 4
    Electronic Resource
    Electronic Resource
    New concepts for controlled homoepitaxy (1995)
    Springer
    Applied physics 61 (1995), S. 455-466 
    Details
    ISSN: 1432-0630
    Keywords: PACS68.55.-a; 61.50.Cj; 81.15.-z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. On the basis of a kinetic growth model we discuss new methods to grow atomically flat homoepitaxial layers in a controlled way. The underlying principle of these methods is to change the growth parameters during growth of an atomic layer in such a way that nucleation on top of a growing layer is suppressed, and thus, layer-by-layer growth is achieved. Experimentally, this can be realized by changing the substrate temperature or deposition rate during monolayer growth in a well-defined way. The same can be achieved at constant temperature and deposition rate by simultaneous ion bombardment during the early stages of growth of a monolayer, or by adding suitable surfactants to the system. Model experiments on Ag(111) and on Cu(111) using thermal energy atom scattering and scanning tunneling microscopy demonstrate the success of these methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540247
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  • 5
    Electronic Resource
    Electronic Resource
    New concepts for controlled homoepitaxy (1995)
    Springer
    Applied physics 61 (1995), S. 455-466 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.—a ; 61.50.Cj ; 81.15.—z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract On the basis of a kinetic growth model we discuss new methods to grow atomically flat homoepitaxial layers in a controlled way. The underlying principle of these methods is to change the growth parameters during growth of an atomic layer in such a way that nucleation on top of a growing layer is suppressed, and thus, layer-by-layer growth is achieved. Experimentally, this can be realized by changing the substrate temperature or deposition rate during monolayer growth in a well-defined way. The same can be achieved at constant temperature and deposition rate by simultaneous ion bombardment during the early stages of growth of a monolayer, or by adding suitable surfactants to the system. Model experiments on Ag(111) and on Cu(111) using thermal energy atom scattering and scanning tunneling microscopy demonstrate the success of these methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540247
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  • 6
    Electronic Resource
    Electronic Resource
    Mössbauer line-sharpening: Application to magnetically-split spectra (1994)
    Springer
    Hyperfine interactions 92 (1994), S. 1195-1202 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The contrast in a Mössbauer spectrum can be enhanced by a model-independent method of line sharpening, due to Afanas'ev and Tsymbal, which employs higher powers of Lorenztian lines. We have investigated the applicability of this process to the57Fe spectrum of a new, ternary rare-earth intermetallic Nd2(Fe, Ti)19. Fitting the processed spectrum gives a smallerx 2 value than a simple Lorentzian fit to the original data due to the deviation from the pure Lorentzian line shape in the spectrum caused by statistical fluctuations in the local chemical environment of the57Fe nuclei. However, we find that the use of the Pearson VII line shape gives a better fit to the spectrum than either the standard Lorentzians or the sharpened, higher-power Lorentzians. The line-sharpening process based on higher-power Lorentzians appears to be of limited use in the study of complex, overlapping magnetic spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02065755
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  • 7
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    Chemisorption of manganese phthalocyanine on Cu(001) surface promoted by van der Waals interactions (2013)
    American Physical Society (APS)
    Details
    Publication Date: 2013-04-18
    Description: Author(s): S. Javaid, S. Lebègue, B. Detlefs, F. Ibrahim, F. Djeghloul, M. Bowen, S. Boukari, T. Miyamachi, J. Arabski, D. Spor, J. Zegenhagen, W. Wulfhekel, W. Weber, E. Beaurepaire, and M. Alouani van der Waals (vdW) interactions within density functional theory are shown to strongly reduce the distance between manganese phthalocyanine (MnPc) and a Cu(001) surface to that found by x-ray standing wave experiments. Thus, the physisorbed ground state that is predicted within the generalized-grad... [Phys. Rev. B 87, 155418] Published Wed Apr 17, 2013
    Keywords: Surface physics, nanoscale physics, low-dimensional systems
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
    Published by American Physical Society (APS)
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