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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2505-2507 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescent devices have been fabricated based on Ge+-implanted SiO2 films thermally grown on crystalline silicon. Both room-temperature electroluminescence and photoluminescence spectra are found to have three luminescent bands peaked at 3.1, 2.1, and 1.6 eV. The electroluminescent devices have onsets for emission under forward bias of 5 V and under reverse bias of −13 V. Its emission is stable and reproducible. Spectral analyses suggest that the electroluminescent excitation of the 3.1 eV band may be related to the impact ionization by hot electrons, whereas that of the 2.1 and 1.6 eV bands to the radiative recombination of hole-electron pairs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2450-2452 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction, infrared, and Raman spectra of Nd-doped LiTaO3 (LT:Nd) were examined. X-ray diffraction patterns of the x and y faces display the appearance of new diffraction peaks and the existence of microtwin crystals, indicating the microstructural deviation from a trigonal system of pure LT crystal. Infrared transmission spectrum shows more than seven strong vibrational bands in the high frequency region 1500–6000 cm−1. Their intensities and frequencies hardly change after annealing the sample at high temperature. We attribute these bands to the existence of defects and some metal and organic complexes in the sample. Similar results were obtained from the Raman spectra. In addition, the transmitted polarized light photomicrograph of the Z face of LT:Nd displays the occurrence of a helix dislocation. All experimental results indicate that the microstructural imperfection of LT:Nd can lead to some new optical effects. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2091-2093 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of the porous structure with intense blue emission formed on C+-implanted silicon were examined using a 488 nm line of Ar+ laser. A Raman peak with full width at half-maximum of 37 cm−1 was obtained at about 492 cm−1. No Raman signals related to the β-SiC were detected. The experimental result indicates that the porous structure mainly consists of Si nanometer crystallites. The existence of β-SiC precipitates with nanometer sizes may be beneficial to the reduction of crystallite sizes and strengthen the Si skeleton, which will lead to an increase in the energy band gap of Si to the blue light emission. Using a model of phonon confinement, the obtained Raman spectra could be fitted on the basis of Si quantum crystallites and the average crystallite size was estimated to be 1.4 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 611-612 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon superlattice was fabricated and its Raman spectra were examined. The clear zone-folded doublets from longitudinal acoustic phonons were obtained up to fourth order. A similar phenomenon was not observed in ordinary porous silicon. Using the elastic continuum model, we calculated the frequencies of these folded doublets and the obtained results were in excellent agreement with the experimental ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Publication Date: 2016-12-01
    Description: Purpose To evaluate the feasibility of intravoxel incoherent motion (IVIM) for the measurement of diffusion and perfusion parameters in hyperacute strokes. Materials and Methods An embolic ischemic model was established with an autologous thrombus in 20 beagles. IVIM imaging was performed on a 3.0 Tesla platform at 4.5 h and 6 h after embolization. Ten b values from 0 to 900 s/mm 2 were fitted with a bi-exponential model to extract perfusion fraction f, diffusion coefficient D, and pseudo-diffusion coefficient D*. Additionally, the apparent diffusion coefficient (ADC) was calculated using the mono-exponential model with all the b values. Statistical analysis was performed using the pairwise Student's t test and Pearson's correlation test. Results A significant decrease in f and D was observed in the ischemic area when compared with those in the contralateral side at 4.5 h and 6 h after embolization ( P  〈 0.01 for all). No significant difference was observed in D* between the two sides at either time point ( P  = 0.086 and 0.336, respectively). In the stroke area, f at 6 h was significantly lower than that at 4.5 h ( P  = 0.016). A significantly positive correlation was detected between ADC and D in both stroke and contralateral sides at 4.5 h and 6 h ( P  〈 0.001 for both). Significant correlation between ADC and f was only observed in the contralateral side at 4.5 h and 6 h ( P  = 0.019 and 0.021, respectively). Conclusion IVIM imaging could simultaneously evaluate the diffusion and microvascular perfusion characteristics in hyperacute strokes. Level of Evidence: 2 J. Magn. Reson. Imaging 2016
    Print ISSN: 1053-1807
    Electronic ISSN: 1522-2586
    Topics: Medicine
    Published by Wiley-Blackwell
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