Schlagwort(e):
Semiconductors -- Quality control -- Congresses.
;
Electronic books.
Materialart:
Online-Ressource
Seiten:
1 online resource (352 pages)
Ausgabe:
1st ed.
ISBN:
9780444596918
Serie:
Issn Series ; v.Volume 34
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=1191038
DDC:
537.6221
Sprache:
Englisch
Anmerkung:
Front Cover -- Semiconductor Materials Analysis and Fabrication Process Control -- Copyright Page -- Table of Contents -- Preface -- Conference Organization -- Supporting Organizations and Sponsors -- Chapter 1. In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices -- 1. Introduction -- 2. Ellipsometry review -- 3. SE/MBE system overview -- 4. Substrate temperature -- 5. Optical constants of AlAs versus temperature -- 6. Dynamic growth rate modeling -- 7. Quantum well growth -- 8. Bragg reflectors -- Acknowledgements -- References -- Chapter 2. Insitu spectral ellipsometry for real-time measurement and control -- 1. Background -- 2. Spectral ellipsometer -- 3. The inverse problem -- 4. Process experimental -- 5. Results and discussion -- 6. Conclusions -- Acknowledgements -- References -- Chapter 3. In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs -- 1. Introduction -- 2. Experimental apparatus -- 3. In situ ellipsometry -- 4. Results and discussion -- 5. Summary -- Acknowledgements -- References -- Chapter 4. Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusions -- Acknowledgements -- References -- Chapter 5. In situ studies of semiconductor processes by spectroellipsometry -- 1. Introduction -- 2. Experimental details -- 3. Representative results -- 4. Summary and conclusions -- Acknowledgements -- References -- Chapter 6. Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering -- 1. Introduction -- 2. Experimental -- 3. Evaluation of < -- є> -- -- 4. Results and discussion -- 5. Summary -- Acknowledgement -- References.
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Chapter 7. Criteria for the extraction of SIMOX material parameters from spectroscopic ellipsometry data -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusion -- Acknowledgements -- References -- Chapter 8. Round robin investigation of silicon oxide on silicon reference materials for ellipsometry -- 1. Introduction -- 2. Preparation of the experimental material and measurement procedures -- 3. Results and discussion -- 4. Conclusions -- References -- Chapter 9. Spectroscopic ellipsometric characterization of Si/Si1-xGex strained-layer supperlattices -- 1. Introduction -- 2. Spectroscopic ellipsometry -- 3. Experimental results and discussions -- 4. Conclusions -- Acknowledgement -- References -- Chapter 10. The influence of nanocrystals on the dielectric function of porous silicon -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- References -- Chapter 11. Some examples of depth resolution in SIMS analysis -- 1. Introduction -- 2. SIMS study of an Fe-Ti multilayer structure with a short period -- 3. Oxygen depth resolution in silica under argon bombardment -- 4. Conclusion -- References -- Chapter 12. Process control for III-V semiconductor device fabrication using mass spectroscopy -- 1. Introduction -- 2. Equipment description -- 3. RGA applications -- 4. SIMS applications -- 5. Conclusions -- Acknowledgements -- References -- Chapter 13. Sputter induced resonant ionization spectroscopy for trace analysis in silicon -- 1. Introduction -- 2. Principles of resonant ionization -- 3. Experimental -- 4. Results -- 5. Conclusion -- Acknowledgements -- References -- Chapter 14. Contamination control and ultrasensitive chemical analysis -- 1. Introduction -- 2. Analytical methods -- 3. Applications -- 4. Conclusions -- References.
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Chapter 15. Organic contamination of silicon wafers by buffered oxide etching -- 1. Introduction -- 2. Ion mobility spectrometry -- 3. Results -- 4. Conclusion -- References -- Chapter 16. Application of advanced contamination analysis for qualification of wafer handling systems and chucks -- 1. Introduction -- 2. Analytical methods -- 3. Results -- 4. Conclusion -- References -- Chapter 17. In situ optical spectroscopy of surfaces and interfaces with submonolayer resolution -- 1. Introduction -- 2. Theory -- 3. Experiment -- 4. Recent results -- 5. Conclusion -- Acknowledgements -- References -- Chapter 18. Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy -- 1. Introduction -- 2. Experiment -- 3. Results and discussion -- 4. Summary -- Acknowledgements -- References -- Chapter 19. Optical second harmonic generation from the Si(111)-Sb interface -- 1. Introduction -- 2. Theory -- 3. Experiment -- 4. Results and discussion -- 5. Conclusions -- Acknowledgements -- References -- Chapter 20. Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride -- 1. Introduction -- 2. Incorporation of silane in the UVCVD of silicon nitride -- 3. Formation of surface hydroxyl groups in the UVCVD of SiO2 from SiH4/N2O precursors -- 4. Conclusion -- References -- Chapter 21. On the assessment of local stress distributions in integrated circuits -- 1. Introduction -- 2. Sample preparation and experimental set-up -- 3. A simple man's model for the strain field at thin film edges -- 4. Results and discussion -- 5. Conclusions -- Acknowledgements -- References -- Chapter 22. Strain analysis of multilayered silicon-based contact structures -- 1. Introduction -- 2. Experiment.
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3. Results and discussion -- 4. Conclusions -- Acknowledgements -- References -- Chapter 23. In-process control of silicide formation during rapid thermal processing -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- 4. Conclusion -- Acknowledgements -- References -- Chapter 24. In situ ellipsometry for real-time feedback control of oxidation furnaces -- 1. Introduction -- 2. In situ measurement -- 3. Closed-loop control -- 4. Adaption to a production furnace -- 5. Conclusion -- References -- Chapter 25. Optical characterization of the electrical properties of processed GaAs -- 1. Introduction -- 2. Theoretical considerations -- 3. Experimental details -- 4. Experimental results -- 5. Summary -- Acknowledgements -- References -- Chapter 26. Optical study of band bending and interface recombination at Sb, S and Se covered gallium arsenide surfaces -- 1. Introduction -- 2. Experimental details -- 3. Experimental results -- 4. Discussion -- Acknowledgements -- References -- Chapter 27. Photoreflectance investigation of dry-etch-induced damage in semi-insulating GaAs substrates -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusions -- Acknowledgements -- References -- Chapter 28. Contactless electromodulation for in situ characterization of semiconductor processing -- 1. Introduction -- 2. Experimental results and discussion -- 3. Conclusions -- Acknowledgements -- References -- Chapter 29. Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's -- 1. Introduction -- 2. Experimental details and results -- 3. Discussion -- Acknowledgements -- References -- Chapter 30. Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells -- 1. Introduction -- 2. Experimental setup -- 3. Results and discussion -- 4. Conclusion.
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References -- Chapter 31. Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures -- 1. Introduction -- 2. Experiments -- 3. Results -- 4. Discussion and conclusion -- References -- Chapter 32. Characterization of lattice-matched and strained GalnAs/AlInAs HEMT structures by photoluminescence spectroscopy -- 1. Introduction -- 2. Experimental details -- 3. Experimental results and discussion -- 4. Conclusion -- Acknowledgements -- References -- Chapter 33. Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusion -- Acknowledgements -- References -- Chapter 34. Electric field dependence of allowed and forbidden transitions in In0.53Ga0.47As/In0.52 Al0.48 As single quantum wells by room temperature modulation spectroscopy -- 1. Introduction -- 2. Experimental details -- 3. Description of the electrotransmittance spectra -- 4. Electric field dependence of the transition energies and linewidths -- 5. Conclusions -- Acknowledgement -- References -- Chapter 35. Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE -- 1. Introduction -- 2. Materials and techniques -- 3. Experimental results -- 4. Discussion -- 5. Conclusion -- References -- Chapter 36. Temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- 4. Conclusions -- Acknowledgements -- References -- Chapter 37. Lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusions -- Acknowledgements -- References.
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Chapter 38. Mapping of the local minority carrier diffusion length in silicon wafers.
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