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  • 1
    Online Resource
    Online Resource
    Carbon Nanotube and Graphene Device Physics. (2010)
    Cambridge :Cambridge University Press,
    Details
    Keywords: Nanotubes. ; Electronic books.
    Description / Table of Contents: Explaining the properties and performance of practical nanotube devices and applications, this is the first introductory textbook on the subject. Fundamental concepts are introduced for those without an advanced scientific background, whilst end-of-chapter problems aid and test understanding. Topics covered include nanotube transistors, interconnects, and the basic physics of graphene.
    Type of Medium: Online Resource
    Pages: 1 online resource (264 pages)
    Edition: 1st ed.
    ISBN: 9780511915147
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=585314
    DDC: 620.5
    Language: English
    Note: Cover -- Carbon Nanotube and Graphene Device Physics -- Title -- Copyright -- Contents -- Preface -- 1 Overview of carbon nanotubes -- 1.1 Introduction -- 1.2 An abbreviated zigzag history of CNTs -- 1.3 Synthesis of CNTs -- 1.4 Characterization techniques -- 1.5 What about non-CNTs? -- 2 Electrons in solids: a basic introduction -- 2.1 Introduction -- 2.2 Quantum mechanics of electrons in solids -- 2.3 An electron in empty space -- 2.4 An electron in a finite empty solid -- 2.5 An electron in a periodic solid: Kronig-Penney model -- 2.6 Important insights from the Kronig-Penney model -- 2.7 Basic crystal structure of solids -- 2.8 The Bravais lattice -- 2.9 The reciprocal lattice -- 2.10 Summary -- 2.11 Problem set -- 3 Graphene -- 3.1 Introduction -- 3.2 The direct lattice -- 3.3 The reciprocal lattice -- 3.4 Electronic band structure -- 3.5 Tight-binding energy dispersion -- 3.6 Linear energy dispersion and carrier density -- 3.7 Graphene nanoribbons -- 3.8 Summary -- 3.9 Problem set -- 4 Carbon nanotubes -- 4.1 Introduction -- 4.2 Chirality: a concept to describe nanotubes -- 4.3 The CNT lattice -- 4.4 CNT Brillouin zone -- 4.5 General observations from the Brillouin zone -- 4.6 Tight-binding dispersion of chiral nanotubes -- 4.7 Band structure of armchair nanotubes -- 4.8 Band structure of zigzag nanotubes and the derivation of the bandgap -- 4.9 Limitations of the tight-binding formalism -- 4.10 Summary -- 4.11 Problem set -- 5 Carbon nanotube equilibrium properties -- 5.1 Introduction -- 5.2 Free-electron density of states in one dimension -- 5.3 Density of states of zigzag nanotubes -- 5.4 Density of states of armchair nanotubes -- 5.5 Density of states of chiral nanotubes and universal density of states for semiconducting CNTs -- 5.6 Group velocity -- 5.7 Effective mass -- 5.8 Carrier density -- 5.9 Summary -- 5.10 Problem set. , 6 Ideal quantum electrical properties -- 6.1 Introduction -- 6.2 Quantum conductance -- 6.3 Quantum conductance of multi-wall CNTs -- 6.4 Quantum capacitance -- 6.5 Quantum capacitance of graphene -- 6.6 Quantum capacitance of metallic CNTs -- 6.7 Quantum capacitance of semiconducting CNTs -- 6.8 Experimental validation of the quantum capacitance for CNTs -- 6.9 Kinetic inductance of metallic CNTs -- 6.10 From Planck to quantum conductance: an energy-based derivation of conductance -- 6.11 Summary -- 6.12 Problem set -- 7 Carbon nanotube interconnects -- 7.1 Introduction -- 7.2 Electron scattering and lattice vibrations -- 7.3 Electron mean free path -- 7.4 Single-wall CNT low-field resistance model -- 7.5 Single-wall CNT high-field resistance model and current density -- 7.6 Multi-wall CNT resistance model -- 7.7 Transmission line interconnect model -- 7.8 Lossless CNT transmission line model -- 7.9 Lossy CNT transmission line model -- 7.10 Performance comparison of CNTs and copper interconnects -- 7.11 Summary -- 7.12 Problem set -- 8 Carbon nanotube field-effect transistors -- 8.1 Introduction -- 8.2 Survey of CNFET device geometries -- 8.3 Surface potential -- 8.4 Ballistic theory of ohmic-contact CNFETs -- 8.5 Ballistic theory of CNFETs including drain optical phonon scattering -- 8.6 Ballistic CNFET performance parameters -- 8.7 Quantum CNFETs -- 8.8 Schottky-barrier ballistic CNFETs -- 8.9 Unipolar CNFETs -- 8.10 Paradigm difference between conventional 2D MOSFETs and ballistic 1D FETs -- 8.11 Summary -- 8.12 Problem set -- 9 Applications of carbon nanotubes -- 9.1 Introduction -- 9.2 Chemical sensors and biosensors -- 9.3 Probe tips for scanning probe microscopy -- 9.4 Nano-electromechanical systems (NEMS) -- 9.5 Field emission of electrons -- 9.6 Integrated electronics on flexible substrates -- 9.7 Hydrogen storage -- 9.8 Composites. , 9.9 References -- Index.
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    GEOMAR EBL
  • 2
    facet.materialart.
    Unknown
    Age determination of sediment core V14 in the Tai O Bay (Table 1)
    PANGAEA
    In:  Supplement to: Bahr, André; Wong, H K; Yim, Wyss W-S; Huang, G; Lüdmann, Thomas; Chan, L S; Ridley Thomas, W N (2005): Stratigraphy of Quaternary inner-shelf sediments in Tai O Bay, Hong Kong, based on ground-truthed seismic profiles. Geo-Marine Letters, 25(1), 20-33, https://doi.org/10.1007/s00367-004-0185-y
    Details
    Publication Date: 2023-05-12
    Description: High-resolution boomer profiles from Tai O Bay, Hong Kong SAR, were ground-truthed using ten discontinuously sampled boreholes penetrating bedrock with a maximum length of 82.1 m. The relationship between depth below seabed and seismic profiles was established through the measurement of two borehole compressional-wave velocity profiles. In departure from previous interpretations, nine Quaternary seismic units were identified, which can be divided into eight systems tracts formed by cycles of fourth-order sea-level fluctuations dating back at least to marine isotope stage (MIS) 7 (ca. 190-245 ka). These consist of two lowstand systems tracts, two transgressive systems tracts, and four highstand systems tracts. Secondary unconformities within the highstand deposits are interpreted to document fifth-order sea-level fluctuations. Lowstand deposits are less common because, as soon as the sea level drops by a few metres, Tai O Bay becomes sub-aerially exposed, leading to widespread non-deposition or erosion. At the same time, extensive fluvial erosion and channel incision take place. Filling of the fluvial channels occurs during rising sea level. Lowstand sediments (if present) are generally landslide deposits laid down on a basal alluvial plain. Uncorrected accelerator mass spectrometry (AMS) radiocarbon dates of mollusc shells show that the depositional environment was marine since 6.2 ka, becoming gradually more brackish as a result of progradation of the Pearl River delta. The computed average sedimentation rate for the period 6.2-4.1 ka is 4.4 m/1,000 year, and approximately 1 m/1,000 year since 4.1 ka.
    Keywords: Age, 14C AMS; Age, dated; Age, dated, error to older; Age, dated, error to younger; Age, dated material; Depth, bottom/max; DEPTH, sediment/rock; Depth, top/min; Sample code/label; Tai_O_Bay_V14; VC; Vibro corer; δ13C, skeletal carbonate; δ13C, standard deviation
    Type: Dataset
    Format: text/tab-separated-values, 70 data points
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    DATA PANGAEA
  • 3
    Electronic Resource
    Electronic Resource
    Bicyclic and tricyclic analogs of anthramycin (1985)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 388-392 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00381a020
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Reductive amination of C-3-ketoanguidin and antitumor activity of the products (1985)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 958-960 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00145a019
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    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electronic conduction mechanisms in thin oxynitride films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1078-1080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new theory for electronic conduction in thin (150 A(ring)) oxynitride films. The present experiment reveals that the electronic conduction mechanism in the oxynitride deviates from that in conventionally grown silicon oxide in the electric field ranging from 6 to 14 MV/cm and suggests that the electronic conduction is governed by three different mechanisms according to the strength of electric field. We suggest that the current conduction is trap-assisted at electric fields lower than 8 MV/cm. Specifically, the conduction is due the tunneling of electrons into the shallow traps in the insulator. In the high-field region ((approximately-greater-than)10 MV/cm), the Fowler–Nordheim (FN) effect becomes dominant and depends on the dielectrics preparation conditions. In the moderate-field region, traps can be filled by both FN current and direct tunneling of electron into the traps which result in a quasi-saturation in the leakage current. The experiment also shows a turnaround behavior in leakage current level, ledge in current-voltage characteristics, and field dependency of the current as the nitridation proceeds. These observations can be readily explained based on the proposed conduction mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349673
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  • 6
    Electronic Resource
    Electronic Resource
    Generation of interface states at the silicon/oxide interface due to hot-electron injection (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7364-7368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By considering the decomposition of water-related bonds at the silicon/oxide interfaces, theoretical expressions for the hot-electron induced interface state generation and threshold-voltage shift are developed. Results demonstrate that the relation between the threshold-voltage shift and the hot-electron fluence needs not follow the power law. The developed expression of the threshold-voltage shift is a function of the initial interface trap density, interface hardness, density of water-related chemical bond, and the capture cross section of interface trap and can be used to explain most of the reported experiments. When the trapping rate and the generation rate are close to each other, a power law dependence of the threshold-voltage shift will be observed in a wide range of injection fluence. However, if the trapping rate is greater than the generation rate or for a sample with large hardness and small initial trap density, a quasi-saturation region is observed because of most of the interface trap being filled and the small amount of generated traps. Saturation of the threshold-voltage shift will occur when most of the water-related bonds are dissociated and the created traps are filled.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355004
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth of PrOx thin films on sapphire by pulsed laser deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4981-4983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PrOx thin films have been grown epitaxially on r-plane sapphire by pulsed laser deposition. The films have (100) orientation if grown at 800 °C, and twinned (111) at lower substrate temperatures. The lattice constant of the PrOx film can be varied by thermal treatment at different oxygen partial pressures. a axis-oriented YBa2Cu3O7−δ films have been grown epitaxially on (100) Pr6O11 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352019
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of Si incorporation on the structural change of a-BxSi1−x alloy films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6094-6099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous BxSi1−x films can be easily prepared by low-pressure chemical vapor deposition over the whole range of x from 0 to 1. In this article, the structural change of BxSi1−x films (0≤x≤1) was studied by x-ray diffraction and infrared (IR) absorption experiments. It was found that these two methods are complementary to each other. X-ray results showed that when x is decreased, there is a gradual transition from the a-B structure, through the SiB4 structure, to the amorphous silicon structure. The transition to a-Si structure is complete at a surprisingly high boron concentration of around 40 at. %. Infrared data also revealed an unexpected result—that the presence of boron suppresses the formation of Si—H types of bonds in high silicon content films, in strong contrast to films prepared by the glow discharge method. Another interesting feature of the IR absorption spectra is the predominance of an absorption band, related to the presence of boronlike icosahedral clusters, in all films with boron concentration to as low as 17.6 at. %. Such clusters may be responsible for the easy formation of an impurity band lying about 0.2 eV above the valence mobility edge, as observed by transport measurements of boron-doped a-Si films prepared by low-pressure chemical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355171
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal conductivity of amorphous alloys above room temperature (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4919-4925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal conductivity of ten amorphous alloys has been measured between 280 and 500 K. The thermal conductivity, K, can be separated into the electronic (Ke) and phonon (Kph) contributions. The electronic thermal conductivity, deduced from the Wiedemann–Franz law, varies almost linearly with temperature, whereas the phonon thermal conductivity shows a slower increase. At 300 K, Kph accounts for 34–49% of K. The phonon mean free path l is 12.5 A(ring) for the binary alloy Fe80B20, but l decreases as the number of chemical components increases, reaching 7 A(ring) for the five-component alloys Fe32Ni36Cr14P12B6 and Co66Fe4Mo2B12Si16. The metal-metal glasses, Cu70Zr30 and Cu45Zr55, have l values slightly larger than 11 A(ring), indicating that they have short-range order similar to that of Fe80B20.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349037
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8074-8079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current–voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 °C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 °C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373500
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