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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of C films formed on single-crystal Cu by ion implantation and laser annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3485-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well-ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351425
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of hydrogen in the annealing environment on photoluminescence from Si nanoparticles in SiO2 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 396-401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of hydrogen in enhancing the photoluminescence (PL) yield observed from Si nanocrystals embedded in SiO2 has been studied. SiO2 thermal oxides and bulk fused silica samples have been implanted with Si and subsequently annealed in various ambients including hydrogen or deuterium forming gases (Ar+4%H2 or Ar+4%D2) or pure Ar. Results are presented for annealing at temperatures between 200 and 1100 °C. Depth and concentration profiles of H and D at various stages of processing have been measured using elastic recoil detection. Hydrogen or deuterium is observed in the bulk after annealing in forming gas but not after high temperature (1100 °C) anneals in Ar. The presence of hydrogen dramatically increases the broad PL band centered in the near infrared after annealing at 1100 °C but has almost no effect on the PL spectral distribution. Hydrogen is found to selectively trap in the region where Si nanocrystals are formed, consistent with a model of H passivating surface states at the Si/SiO2 interface that leads to enhanced PL. The thermal stability of the trapped H and the PL yield observed after a high temperature anneal have been studied. The hydrogen concentration and PL yield are unchanged for subsequent anneals up to 400 °C. However, above 400 °C the PL decreases and a more complicated H chemistry is evident. Similar concentrations of H or D are trapped after annealing in H2 or D2 forming gas; however, no differences in the PL yield or spectral distribution are observed, indicating that the electronic transitions resulting in luminescence are not dependent on the mass of the hydrogen species. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370699
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  • 3
    Electronic Resource
    Electronic Resource
    New carbon nitride phase by high-dose N ion implantation in glassy carbon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3060-3065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility for the synthesis of CN compounds by high-dose N implantation of glassy carbon is investigated. The changes in volume and surface morphology and the retained N concentration as a function of ion dose are reported. For both N and C (used as a control), implantation initially induces compaction in the surface region that saturates at a density above 2.6 g/cm3. After formation of this dense surface layer, additional implantation causes the material to expand to accommodate the implanted ions and vacancies formed during the implantation process. For N the swelling is initially linear in fluence up to 5×1017/cm2 with a volume increase of 16 A(ring)3 per added N atom; this is twice the volume per atom in the compacted substrate. Above a dose of 5×1017 N/cm2 the swelling behavior is more complex. A phase change is observed to occur at a dose between 5×1017 and 1×1018/cm2, which is concomitant with at least some of the implanted N being driven to the surface. In addition, micron-sized surface features are seen by scanning electron microscopy, and a significant surface roughening occurs. Ion backscattering spectra have been used to characterize the implanted N profile. The maximum retained concentration was found to be 30 at. %. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360057
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4386-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystals of group-IV semiconductor materials (Si, Ge, and SiGe) have been fabricated in SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystals has been studied by transmission electron microscopy. Critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge-implanted systems. Significant roughening of the nanocrystals occurs when the annealing temperature is raised above the melting temperature of the implanted semiconductor material. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359843
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  • 5
    Electronic Resource
    Electronic Resource
    GaAs nanocrystals formed by sequential ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1876-1880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential ion implantation of As and Ga into SiO2 and α-Al2O3 followed by thermal annealing has been used to form zinc-blende GaAs nanocrystals in these two matrices. In SiO2, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al2O3, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361088
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  • 6
    Electronic Resource
    Electronic Resource
    Chemical interaction of Si, Ti, and Mo with graphite surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7695-7702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of Si, Ti, and Mo atoms with pyrolytic graphite substrates has been studied for evaporated layers of about 100 nm and implanted ions with mean ranges between 2 and 4 nm. In the temperature range from room temperature to 1800 K the thermal diffusion of carbon into the evaporated layers has been studied by Rutherford backscattering spectroscopy while the temperature dependence of the carbide formation has been studied by x-ray photoelectron spectroscopy. For all three systems stable carbidic phases are predicted by equilibrium phase diagrams. For Ti the formation of TiC is already observed after room temperature implantation, while for Mo annealing to 1200 K is necessary for Mo2C formation. In the case of Si oxygen contamination due to the air transfer after implantation resulted in a mixed SiOxCy phase which only transformed into a SiC phase at temperatures above 900 K, where the oxygen was released. The temperature range of stability of the carbidic layers was found to be correlated to the melting temperature of the metal–carbide eutectic. Above this temperature the metal atoms rapidly dissolve in the graphite lattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362673
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  • 7
    Electronic Resource
    Electronic Resource
    Radiation damage and annealing in graphite implanted with H+2 and Mo+ (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2603-2608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation damage due to H+2 and Mo+ implantation into hot-worked pyrolytic graphite and into single-crystal graphite flakes has been studied using 1-MeV 4He+ ion channeling. The implant energies used, 35 keV for H+2 and 120 keV for Mo+, yielded ranges of about 1600 and 600 A(ring), respectively. For H2 implantation, a partially crystalline surface layer remains after a fluence of 2×1016 H/cm2; this layer is completely disordered at 2×1017 H/cm2. At higher hydrogen fluences a surface layer exfoliates. For Mo implantation the disorder introduced at a fluence of 5×1014 Mo/cm2 is sufficient to prevent channeling throughout the range. For both implant species, complete recrystallization of samples disordered up to the surface occurs for annealing only at temperatures above 2800 K. If a surface layer remains crystalline after implantation, recrystallization proceeds both from the bulk and from the surface, and crystallinity is restored at 2300 K. While hydrogen is known to be released at temperatures between 1100 and 1500 K, Mo remains within its original range distribution up to the temperature of complete recrystallization. At a temperature of 2300 K an ordering of the implanted Mo atoms with respect to the c axis is observed, indicating short-range migration within the range distribution. At 2800 K no more Mo could be found in the analyzed surface layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340997
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  • 8
    Electronic Resource
    Electronic Resource
    High dose Fe implantation of graphite at elevated temperature (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 195-197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented pyrolytic graphite samples have been implanted at elevated temperature (450 °C) with 57Fe species at high fluence (2×1017 cm−2) and a bombarding energy of 35 keV. Under these conditions of implantation, materials with ferromagnetic properties have been synthesized, as demonstrated by magnetization measurements using a superconducting quantum interference device magnetometer. It is further shown that the samples exhibit ferromagnetic, paramagnetic, and diamagnetic contributions to the total magnetization. The value of the measured coercive force and a comparison of scanning electron microscopy studies of the sample surface with the calculation of the saturation ferromagnetic moment suggest that fine iron particles are created on the surface. A mechanism is proposed to explain these observations. Complementary Rutherford backscattering spectroscopy and Raman measurements indicate that the lattice is not completely amorphized under these implantation conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340489
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of single-crystal diamond microcomponents (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3072-3074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined a technique for the lift-off of thin diamond films from a bulk diamond with a technique for engraving diamond with a focused excimer laser to produce free-standing single-crystal diamond microstructures. One microcomponent that has been produced is a 12 tooth gear ∼400 μm in diameter and ∼13 μm thick. Other microstructures have also been demonstrated, showing the versatility of this method. This process should be applicable to producing diamond microcomponents down to spatial dimensions (width and thickness) of a few micrometers. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112959
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  • 10
    Electronic Resource
    Electronic Resource
    Ion-beam synthesis and stability of GaAs nanocrystals in silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2389-2391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential implantation of Ga and As into silicon followed by thermal annealing has been used to synthesize GaAs buried inside silicon. The GaAs exists in the form of nanocrystals which are three-dimensionally oriented with respect to the silicon matrix. Thermodynamic criteria which are important in determining whether the desired compound will form are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116143
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