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  • 1
    Electronic Resource
    Electronic Resource
    The Surrey STM: Construction, development, and evaluation of a scanning tunneling microscope (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 3010-3021 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A scanning tunneling microscope has been built together with the necessary controlling electronics. Currently this is used at atmospheric pressure but is capable of use under vacuum with minor modifications. Trials of the system, and subsequent adjustments, have taken place using highly oriented pyrolitic graphite and gold evaporated on silicon samples. Good and versatile control of tunneling current was achieved. We report on the design, development, construction, and evaluation of the instrument. Preliminary results illustrating reproducible topographical images are presented and discussed. Gap-versus-bias voltage and gap-versus-tunneling current characteristics are also presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142147
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  • 2
    Electronic Resource
    Electronic Resource
    A novel bimorph-type actuator for use in scanning probe microscopes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3332-3333 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a novel bimorph-type piezoelectric transducer which achieves three-dimensional positioning in a 70 μm ×70 μm ×10 μm volume with applied voltage ranges less than 100 V. This transducer, appropriately shaped and with appropriately patterned electrodes, has been tested by using it as a scanner in a scanning tunneling microscope. Results obtained in this application of the actuator are presented, including characterization of performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144301
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  • 3
    Electronic Resource
    Electronic Resource
    Heat transfer between two metallic surfaces at small distances (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7209-7216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In scanning thermal microscopy, but also in scanning tunneling microscopy, the thermal contact between tip and sample plays an important role. The heat transfer across the vacuum gap between two parallel metallic surfaces, if the gap width is decreased below several microns, has been investigated. At these distances propagating electromagnetic modes die out but simultaneously a transfer of nonpropagating surface modes across the gap becomes more probable. The heat conductance of the vacuum gap should become distance dependent and larger than that given by the Stefan–Boltzmann law; however, the experimental results and theoretical considerations indicate that the heat transfer, based on the discussed proximity mechanism, is very small, smaller than predicted by the theory of Polder and Van Hove [Phys. Rev. B 4, 3303 (1971)]. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358001
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  • 4
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 5
    Electronic Resource
    Electronic Resource
    Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1926-1928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkably low turn-on field of about 1 V/μm has been observed in electron field emission from planar SiC/Si heterostructures formed by high dose C implantation into Si using a metal vapor vacuum arc ion source. An implant energy of 35 keV was used to a dose of 1.0×1018 ions/cm2 with subsequent annealing in nitrogen at 1200 °C for 2 h. X-ray photoelectron spectroscopy showed that a thin surface stoichiometric SiC layer, with a thickness of about 150 nm, had been formed. Atomic force microscopy showed that there are densely distributed small protrusions formed on the surface. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121229
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic domain structures of Co22Ag78 granular films observed by magnetic force microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2472-2474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A magnetic force microscope (MFM) was used to image the topography and magnetic microstructures of Co22Ag78 granular films. The observed morphology shows isolated nanometer-scale cobalt particles (granules) embedded in the silver matrix. Stripe magnetic domains with much larger size (typically of ∼100 nm wide) than that of cobalt particles are resolved clearly on MFM micrographs for the annealed samples. It is demonstrated that the domain width and the relative magnetic force strength first increases and then decreases with annealing temperature with a maximum at about 600 K. We suggest that the appearance of the stripe domains is attributed to magnetic correlation among many of the isolated single-domain cobalt particles and is dependent on the microstructure of the samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121393
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  • 7
    Electronic Resource
    Electronic Resource
    Further evidence for the quantum confined electrochemistry model of the formation mechanism of p−-type porous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3399-3401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of p− porous silicon (PS) were formed in HF solutions of different concentrations. One type with nanoscale (NS) dimensions of about 3 nm and the other with dimensions of about 5 nm. PS samples formed in the lower concentration of HF were anodized again in the higher concentration of HF and vice versa. The photoluminescence peak position and, thus, the size of NS units of PS were found to be related to the concentration of HF in which the PS is formed, independent of the forming time. The larger NS units of PS can be further electrochemically etched by anodization, while the smaller ones cannot. These results give a confirming evidence for the quantum confined electrochemistry model of the formation mechanism of PS based on the quantum confinement effect and classical electrochemical theory [S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. 62, 642 (1993)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117272
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  • 8
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy of an ion-bombarded PbS(001) surface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2039-2041 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Freshly cleaved (001) surfaces of single crystalline PbS were bombarded by 8 keV Kr+ ions at a dose of 3×1012 cm−2. Atomically resolved scanning tunneling microscopy (STM) images were taken showing damaged areas due to individual ion impacts. Analysis of a STM image shows a shallow impact crater, a stacking fault, displacement of Pb2+ and S2− ions from their regular surface sites, and migration of interstitials to the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100312
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  • 9
    Electronic Resource
    Electronic Resource
    Tip artifacts in atomic force microscope imaging of ion bombarded nanostructures on germanium surfaces (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5859-5861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication, we present a study of tip artifacts in atomic force microscope images of nanometer-scale cellular structures created on germanium surfaces by ion bombardment. It is demonstrated that the appearance of a columnar/granular morphology is due to severe image distortion when the tip size is comparable with the mean cell/hole diameter. These tip artifacts can often be deconvoluted by inverting the image and the lateral extension of the cell/hole can be reproduced with reasonable accuracy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366454
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  • 10
    Electronic Resource
    Electronic Resource
    Structural and magnetic properties of Fe–Ge layer produced by Fe ion-implantation into germanium (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1410-1416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe–Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe–Ge clusters at high temperatures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427135
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