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  • 1
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposition of high Tc superconducting Bi-Sr-Ca-Cu-O films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1166-1168 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of the high Tc Bi-Sr-Ca-Cu-O superconductor have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2 , Sr(dipivaloylmethanate)2 , and Ca(dipivaloylmethanate)2, and triphenylbismuth. Deposition is carried out at 2 Torr with argon as the carrier gas and oxygen and water vapor as reactants. Film growth rates of 2–3 μm/h are achieved. After annealing under oxygen, energy dispersive x-ray analysis and x-ray diffraction data reveal that such films on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox, Tc=85 K, phase and have preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of film superconductivity at ∼110 K and zero resistance by 75 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101481
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  • 2
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposition of high Tc superconducting films using a volatile, fluorocarbon-based precursor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1750-1752 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform films of the high Tc superconductor YBa2Cu3O7−δ have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2, Y(dipivaloylmethanate)3, and Ba(heptafluorodimethyloctanedionate)2. With argon as a carrier gas and water vapor as a reactant, film growth rates of 10–30 nm/min are achieved. After annealing under oxygen, energy dispersive x-ray analysis, profilometry, and x-ray diffraction data reveal that such YBa2Cu3O7−δ films on [100] single-crystal MgO have good compositional and dimensional uniformity as well as preferential orientation of crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of superconductivity at ∼90 K and zero resistance by 66.2 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100473
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  • 3
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposition routes to high Tc superconducting Tl-Ba-Ca-Cu-O films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2154-2156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of the Tl-Ba-Ca-Cu-O high Tc superconductor can be prepared by either of two organometallic chemical vapor deposition routes. Ba-Ca-Cu-O films are first prepared on yttria-stabilized zirconia using the volatile precursors Ba(heptafluorodimethyloctanedionate)2, Ca(dipivaloylmethanate)2, and Cu(acetylacetonate)2. Deposition is carried out at 5 Torr pressure with argon as the carrier gas and water vapor as the reactant gas. Thallium is next incorporated in these films either by vapor diffusion using bulk Tl-Ba-Ca-Cu-O as the source, or by organometallic chemical vapor deposition using Tl(cyclopentadienide) as the source. The latter deposition is carried out at atmospheric pressure with an argon carrier and water-saturated oxygen reactant, followed by rapid thermal annealing. Both types of films consist primarily of the TlBa2Ca2Cu3Ox phase, have preferential orientation of the CuO planes parallel to the substrate surface, and exhibit onset of superconductivity at ∼120 K with zero resistance by 100 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101515
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  • 4
    Electronic Resource
    Electronic Resource
    Deep level defects in n-type GaN compensated with Mg (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3769-3771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level defects in n-type epitaxial GaN compensated with Mg were measured using photocapacitance spectroscopy on Schottky barrier diodes. The doped GaN was prepared by atmospheric pressure metalorganic vapor phase epitaxy using bis(cyclopentadienyl)magnesium as the dopant source. The Mg-doped GaN films were n type as determined by Hall-effect measurements. Addition of magnesium resulted in the formation of a series of deep centers with optical threshold energies of 1.0, 1.2, 1.8, and 3.1 eV. Upon annealing the Mg compensated GaN in nitrogen at 850 °C the midgap levels disappeared and only the trapping level at 3.1 eV remained. The midgap levels are ascribed to Mg dopant complexes which may be responsible for low doping efficiency of Mg in the as-grown, doped GaN as well as its semi-insulating behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116001
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  • 5
    Electronic Resource
    Electronic Resource
    Compensation of n-type GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3028-3030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compensation in Se-doped n-type GaN prepared by atmospheric pressure metalorganic vapor phase epitaxy was studied. Hydrogen selenide was the dopant source. The carrier concentration is linearly proportional to the H2Se pressure for low partial pressures and proportional to the cube root at high partial pressures. Carrier concentrations as high as 6×1019 cm−3 at 295 K were achieved. From Hall-effect measurements, the Se-doped GaN was shown to be highly compensated even for heavily n-type material. The defects responsible for the compensation were investigated using low-temperature photoluminescence. A strong acceptor-related transition at 3.447 eV at 15 K was observed in the heavily doped layer. The observed doping dependence of Se in GaN is attributed to compensation by triply charged vacancies which is consistent with recent theoretical calculations on defect formation in n-type material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116828
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