Keywords:
Electronic books.
Description / Table of Contents:
Bulk Materials, Thin Films and DevicesProceedings of the Fifth International Conference on Polycrystalline Semiconductors V, held in Schwäbisch Gmünd, Germany, September 13-18, 1998.
Type of Medium:
Online Resource
Pages:
1 online resource (582 pages)
Edition:
1st ed.
ISBN:
9783035706864
Series Statement:
Solid State Phenomena Series ; v.Volumes 67-68
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=6319216
Language:
English
Note:
Intro -- Polycrystalline Semiconductors V -- Table of Contents -- Atomic Structure and Properties of Extended Defects in Silicon -- Electrical Activity of Tilt and Twist Grain Boundaries in Silicon -- Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries -- Impurity Effect on the Dislocation DLTS Spectrum in Silicon -- Formation and Annihilation of New Donors in Ribbon Growth on Substrate Silicon -- Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing -- Grain Boundary Effects in Ionic and Mixed Conductors -- Qualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced Current -- Laser Beam Induced Current Characterization of High Efficiency Chalcopyrite Solar Cells -- Effective Diffusion Length of Multicrystalline Solar Cells -- Injection and Collection Diffusion Lengths of Polycrystalline Thin-Film Solar Cells -- Hydrogenated Microcrystalline Silicon for Photovoltaic Applications -- Intrinsic Microcrystalline Silicon for Solar Cells -- Deposition of Microcrystalline Silicon Films by Magnetron Sputtering -- Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate -- Low-Temperature Deposition of Microcrystalline Silicon by Microwave Plasma-Enhanced Sputtering -- Influence of Deposit Thickness on the Microstructure and Surface Roughness of Silicon Films Deposited from Silane -- Adaptation of Microelectronics Simulator to the Polycrystalline Silicon Technology -- Thickness Control of the Amorphous Buffer Layer of Hydrogenated Nanocrystalline Silicon: Effect of the Dopant Concentration -- Structure Dependence of the Electrical Conductivity of Hydrogenated Nanocrystalline Silicon Films -- Highly Doped Microcrystalline SiGe Films: Structure and Transport Properties.
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Photoluminescence Measurements of Microcrystalline Silicon -- Silicon Produced by Thermal Chemical Vapour Deposition on Ceramic Substrates for Photovoltaic Applications -- Grain Matrix Made with Excimer-Laser Crystallization of Thin Silicon Films -- Grain Boundary Location Control by Patterned Metal Film in Excimer Laser Crystallized Polysilicon -- Characterisation of Excimer Laser Crystallised Polysilicon by X-Ray Diffraction and by Channeling Contrast in a Scanning Electron Microscope -- Multicrystalline Silicon Thin Films: Laser Crystallization Conditions and Properties -- Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications -- Properties of Poly-Si Obtained by Solid Phase Crystallization of Differently Produced a:Si:H Thin Films -- Transmission Electron Microscopy and Raman Analysis of the Crystallisation Process of a-Si on Glass for Low Seed Density -- Fine-Crystalline Silicon Grown at Low Temperatures: Investigations by High-Resolution Microscopy -- Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate -- Polycrystalline Silicon Films Produced by Low Pressure Chemical Vapour Deposition for Microswitch Applications: The Stress as Dependent on Deposition Conditions, Doping Type, and Thermal Treatments -- Ultrathin Quasi-Monocrystalline Silicon Films for Electronic Devices -- Atomic Layer Deposition of ZnO Films and Their Application to Solar Cells -- Properties of Transparent Conducting Indium Tin Oxide Films Deposited by Reactive e-Beam Evaporation on Heated Glass -- Large Area Device Quality Indium-Tin-Oxide Thin Films by Magnetron Sputterting -- Ion Assisted Reactive Magnetron Sputtering as a Deposition Method for High Quality Thin Films of Compound Semiconductors -- Structure and Properties of TiO2 Thin Films for Gas Sensors.
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Texture Etched Aluminium Doped Zinc Oxide-Structural and Electrical Properties -- Electron Spin Resonance Centers in Donor-Doped CaTiO3 Single Crystals -- Modification in the Chemical Bath Deposition Apparatus, Growth and Characterization of CdS Semiconducting Thin Films for Photovoltaic Applications -- Process by PbSe Thin Film Deposition Reactions by Close-Spaced Vapor Transport Technique -- Comparative Study of Isothermal Grain Growth of CdS and CdTe in the Presence of Halide Fluxes -- p-Type Doping of CdTe -- Charge Transport and Photoelectric Processes in Polycrystalline Cadmium Telluride Surface-Barrier Structures -- Deposition Study of Bi2Te3 Thin Films by Close-Spaced Vapor Transport and Close-Spaced Sublimation -- High Temperature Electrical Conductivity in ZnS:Cu:Cl Ceramics and in CdSexTe1-x Polycrystalline Solid Solutions -- Influence of the Layer Oxidation on the Electrical Conductivity and the Positron Trapping in the Polycrystalline ZnCr2Se4 and CuCr2Se4 Spinels -- Defect-Induced Metal-Semiconductor Transition in CuxCoyCrzSe4 -- Fabrication of High Efficiency Cu(In,Ga)Se2 Thin Film Solar Cells Prepared by Physical Vapor Deposition -- Growth and Characterization of CuxAg1-xInSe2 Thin Films by Pulsed Laser Deposition -- Preparation of CuInS2 Thin Films by Sequential Evaporation of In2S3 and CuS -- Growth of CuGaSe2 Thin Films by Metal Organic Chemical Vapour Deposition from Different Organometallic Sources -- Formation of Polycrystalline CuInS2-Films by Plasma Sulphurization of Cu-In Bilayers in a Magnetron Discharge in an Ar/H2S-Atmosphere -- Polycrystalline Bulk CuInSe2 with a Deviation from Valence Stoichiometry -- Relation Between Photoconductivity and Deposition Conditions of Evaporated CuInSe2 Polycrystalline Thin Films -- Microstructure of Cu-Rich CuGaSe2 Thin Films.
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Light-Induced Metastabilities in the Interface Region of Cu(In,Ga) Se2-Based Photovoltaic Devices Studied by Laplace Transform Junction Spectroscopy -- Air-Annealing Effects on Polycrystalline Cu(In,Ga)Se2 Heterojunctions -- Photoelectrical Properties of In/p-(Cu,Ag)(In,Ga) (Se,Te)2 Surface-Barrier Structures -- Polarization Photosensitivity of Polycrystalline-Film Cu(In,Ga)Se2/CdS/ZnO Structures -- Photoluminescence Study of Cu(GaxIn1-x)3Se5 and CuIn3(SxSe1-x)5 Crystals with 0≤x≤1 -- Fullerene-Based Thin Films as a Novel Polycrystalline Semiconductor -- Low Dislocation Density Multicrystalline Silicon for Photovoltaic Applications -- Phase Field Modeling of the Growth of mc-Silicon from the Melt -- Low-Temperature Silicon Epitaxy by Ion-Assisted Deposition -- Profiled Poly-Silicon Films by Hot-Wire Chemical Vapour Deposition for Solar Cells on Cheap Metal Substrate -- Optical Characterization of Ru2Si3 and Ru2Ge3 by Various Spectroscopic Methods and by Band Structure Calculations -- Cubic Silicon Carbide Films Grown by Reactive Magnetron Sputtering at Relatively Low Temperature -- Defect Engineering in Polycrystalline Silicon Using Ultrasound -- Defects Modification by Ultrasound in Crystals -- Method for the Evaluation of the Influence of Gettering and Bulk Passivation on Non-Uniform Block-Cast Multicrystalline Si Solar Cells -- Influence of Hydrogen Plasma Treatment on Electric Properties of Polycrystalline CdSxSe1-x Films -- Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods -- Improving the Quality of Polycrystalline Silicon String Ribbon for Fabricating High Efficiency Solar Cells -- Polycrystalline Silicon Thin Film Transistors: State of the Art and Improvement of Electrical Characteristics.
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Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors -- Process to Fabricate High Performance Solid Phase Crystallized n-Type and p-Type Thin Film Transistors on Glass Substrate -- An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors -- Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure -- a-Si/c-Si Heterojunctions as a Tool to Realise Solar Cells Based on Thin Poly-Silicon Growth on Glass -- Heterojunctions for Polycrystalline Silicon Solar Cells -- Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size -- W-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity -- Keyword Index -- Author Index.
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