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  • 1
    Electronic Resource
    Electronic Resource
    Soft magnetism of Fe–Co–N thin films with a Permalloy underlayer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1477-1482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic investigation was carried out on the Fe–Co–N thin films with varying Permalloy underlayer thicknesses (in short Py(backward-slash)Fe–Co–N films), which show significantly improved magnetic softness when a very thin Permalloy underlayer is applied. The easy axis coercivities of the Py(backward-slash)Fe–Co–N films drop from 1.3 kA/m (16 Oe) to 640 A/m (8 Oe) with an appropriate Permalloy underlayer; and the corresponding hard axis coercivity drops from 320 A/m (4 Oe) to less than 80 A/m (1 Oe). The highest transverse permeability is observed in the Py(backward-slash)Fe–Co–N film with a Permalloy underlayer of 3.5 nm, which also shows the smallest dispersion angle α50 among the Py(backward-slash)Fe–Co–N films. The changes in the mean grain size, texture, and magnetostriction are determined to not be responsible for the observed magnetic softness in the Py(backward-slash)Fe–Co–N films. In contrast, a tantalum underlayer does not reduce the coercivities and dispersion angles in the Ta(backward-slash)Fe–Co–N films. Based on these results, an exchange-induced ripple reduction mechanism is proposed to explain the effects of the Permalloy underlayer on the Py(backward-slash)Fe–Co–N films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491017
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of ion bombardment on the long-range chemical order in FePd films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5753-5758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe1−xPdx films of nearly equiatomic composition (0.47≤x≤0.56) have been prepared by ion-beam sputtering at substrate temperatures TS=350 °C. During growth the films were bombarded by Xe+ ions with energies EXe=0–100 eV and an ion-to-atom arrival ratio of R=0.3. Films were characterized by x-ray diffraction and the wavelength dependent magneto-optic Kerr effect. Without bombardment, the films are partly chemically ordered with a long-range order parameter S≈0.7. For energies EXe up to 50 eV the chemical order survives to a high degree and only moderate modifications in the structural data and Kerr spectra are observed, whereas for EXe=100 eV the chemical order is completely destroyed. In contrast, the epitaxial quality seems to be unaffected by the bombardment for EXe≤50 eV. This shows that low-energy ion bombardment during growth only leads to a randomization of the Fe and Pd atoms on the lattice sites without causing significant structural damage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363629
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetoresistivity below Tc in silver-clad Bi1.8Pb0.4Sr2Ca2Cu3Oy tape (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2613-2617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetoresistance curves of a silver-clad Bi (2223) tape below critical temperature Tc over a magnetic field range up to 8 T. At temperatures well below Tc the magnetoresistive transition can be well described by a thermally activated flux flow (TAFF) process. The activation energies inferred from such dissipation measurements are found to have the form U=U0+U' (H,T), where U0 is magnetic field and temperature independent, U' (H,T) is proportional to (1−T/Tc)n/H. At temperatures very close to Tc the TAFF dissipation can no longer be found and the magnetoresistance seems to be determined by the combination of viscous flux flow and thermal fluctuation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358725
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetoresistive effect in p-type semiconducting diamond films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3044-3048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistive effects were studied in p-type heteroepitaxial diamond films with a strip or Corbino disk structure in a magnetic field ranging from 0 to 5 T. The films were grown by microwave plasma chemical vapor deposition and boron doped by cold ion implantation and rapid thermal annealing. The experimental results show that the magnetoresistance (MGR) of p-type heteroepitaxial diamond films strongly depends on the geometric form of the samples and the magnetic field. Diamond films are assumed to be an isotropic isothermal solid in which conduction is by holes from light, heavy and split-off bands. Based on the Fuchs and Sondheimer thin-film theory, considering spherical energy surfaces and mixed scattering by lattice vibrations and ionized impurities and surface, a theoretical description of the magnetoresistive effect in diamond films is presented by solving the Boltzmann transport equation in the relaxation time approximation. A relationship between the MGR and the thickness of films, magnetic field, and mobility is shown. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446662
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  • 5
    Electronic Resource
    Electronic Resource
    Preparation and photoluminescence of highly ordered TiO2 nanowire arrays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly ordered TiO2 nanowire (TN) arrays were prepared in anodic alumina membranes (AAMs) by a sol-gel method. The TNs are single crystalline anatase phase with uniform diameters around 60 nm. At room temperature, photoluminescence (PL) measurements of the TN arrays show a visible broadband with three peaks, which are located at about 425, 465, and 525 nm that are attributed to self-trapped excitons, F, and F+ centers, respectively. A model is also presented to explain the PL intensity drop-down of the TN arrays embedded in AAMs: the blue PL band of AAMs arises from the F+ centers on the pore walls, and the TNs first form in the center area of the pores and then extend to the pore walls. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350959
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  • 6
    Electronic Resource
    Electronic Resource
    Resistive transition of Bi(2223) silver clamped thick film (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5108-5111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354297
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  • 7
    Electronic Resource
    Electronic Resource
    Field-induced intensity and Stark shift measurements of the electric dipole moment of ICl in the B 3Π0+ state (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 5464-5472 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The laser-induced fluorescence spectrum in ICl of the (2'–0‘) vibrational band in the B 3Π0+–X 1Σ+ electronic system has been measured as a function of the electric field strength up to 32.5 kV/cm. Field-induced intensity measurements on I35Cl have been used to determine the magnitude and sign of the electric dipole moment μB in the B state relative to the magnitude and sign of the moment μX in the X state. From the intensity ratio of the field-induced line Q(0) to the allowed Stark component P(1,0), which has the same upper state, it was found that μB/μX=+(0.888±0.051). The positive sign indicates that the polarity is the same in the B and the X states. Intensity ratio measurements for Q(0) to R(5) and for Q(1) to R(5) yield similar (but less precise) results. In order to test this first application of the method to excited electronic states, Stark shift measurements were carried out on a number of P-branch Stark components. It was found for I35Cl that ||μB/μX||=(0.8984±0.0036), in good agreement with the intensity measurements. The corresponding determination for I37Cl is that ||μB/μX||=(0.900±0.014). The present results are in agreement with those obtained earlier from studies of the absorption spectrum by Watanabe et al. [Jpn. J. Appl. Phys. 31, 901 (1992)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467335
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  • 8
    Electronic Resource
    Electronic Resource
    Ion irradiation-induced amorphization in the Al2O3–SiO2 system: A comparison with glass formation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 587-593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ion beam-induced crystalline-to-amorphous transition has been investigated for crystalline phases in the Al2O3–SiO2 system: Al2O3, SiO2 (quartz), Al2SiO5 (kyanite, andalusite, sillimanite), and 3Al2O3⋅2SiO2 (mullite). Xe+ 1.5 MeV was used to irradiate samples at temperatures from 15 to 1023 K in situ in a transmission electron microscope to determine the critical amorphization doses. The susceptibility to amorphization is (highest to lowest): quartz, sillimanite, kyanite, andalusite, mullite, and alumina. These data are compared to viscosities and activation energies for viscous flow of melts in this system. The doses required for amorphization by ion irradiation are related to the viscosities of the melts. The activation energies for irradiation-enhanced annealing are qualitatively correlated with the activation energies of viscous flow. These results suggest a parallel between ion beam irradiation-induced amorphization and glass formation. Glass-forming "ability'' correlates with susceptibility to radiation-induced amorphization. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364219
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  • 9
    Electronic Resource
    Electronic Resource
    Sandwich films Properties of a new soft magnetic material (2000)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 407 (2000), S. 150-151 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The development of advanced electromagnetic devices has been constrained by a lack of soft magnetic materials with a suitably high saturation magnetization (over 20 kilogauss) and a large permeability roll-off frequency (greater than 1 gigaherz). For example, magnetic hard-disk-drive ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35025142
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  • 10
    Electronic Resource
    Electronic Resource
    Adduct of AlMe3 with Benzo[f]quinoline (1996)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 35-37 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The reaction of AlMe3 with 5,6-benzo[f]quinoline gave the Lewis acid-base adduct Me3Al-BQ, (BQ = benzo[f]quinoline) {(benzo[f]quinoline-N)trimethylaluminium, [Al(CH3)3(C13H9N)]}, with an Al-N bond length of 2.057 (2) Å. This adduct is much less air and water sensitive than the trialkyl metal. The complex was found to be a discrete 1:1 molecular adduct of trimethylaluminium bonded to BQ. The compound contains a tetracoordinate Al atom with distorted tetrahedral geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270195009681
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