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  • 1
    Electronic Resource
    Electronic Resource
    Electron-spin polarization in photoemission from thin AlxGa1−xAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5189-5192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization of photoemitted electrons from thin AlxGa1−xAs layers grown by molecular-beam epitaxy has been studied as a function of Al concentration by varying x in steps of 0.05 from 0.0 to 0.15. As the fraction x is increased, the wavelength dependence of the polarization shifts toward shorter wavelengths, permitting wavelength tuning of the region of maximum polarization. A maximum electron polarization of 42%–43% is obtained for AlxGa1−xAs samples with x≥0.05 while the maximum polarization of GaAs (x=0) samples reaches 49%. To investigate the lower polarization of AlxGa1−xAs, additional samples have been studied, including a short-period superlattice (GaAs)7 - (AlAs)1 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353744
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  • 2
    Electronic Resource
    Electronic Resource
    Precision AlGaAs Bragg reflectors fabricated by phase-locked epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2493-2495 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extremely high quality AlGaAs Bragg reflectors have been fabricated by molecular beam epitaxy using advanced growth techniques including phase-locked epitaxy, short-period superlattices, and growth interruptions. These techniques are used to control the layer periodicity, interface flatness, and producibility of the structures. The experimental reflectance spectrum shows an extremely square stop band and very regular side lobes closely matching the theoretical spectrum. A comparison of experimental to theoretical reflectance spectra is used to show that the layer periodicity is maintained within 1% and the interface flatness controls the optical loss per interface to less than 0.1%. Experimental results show a maximum reflectance of 98.5% for a (AlAs)6(GaAs)3/(AlAs)1(GaAs)4 35.5-period Bragg reflector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102890
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  • 3
    Electronic Resource
    Electronic Resource
    Vortex Interactions with Walls (1994)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Fluid Mechanics 26 (1994), S. 573-616 
    Details
    ISSN: 0066-4189
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.fl.26.010194.003041
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  • 4
    Electronic Resource
    Electronic Resource
    Spatial hole burning and self-focusing in vertical-cavity surface-emitting laser diodes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 542-544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measure spatial hole burning in weakly index guided vertical-cavity surface-emitting laser diodes (VCSELs) by spatially and spectrally resolving the spontaneous emission near field above threshold and show that spatial holes produce a significant lensing effect. We demonstrate experimentally, and with a simple model, that in weakly index guided VCSELs, self-focusing causes the fundamental mode width to decrease with increasing output power, exacerbating the spatial hole burning problem and inducing a transition to multimode operation at relatively low powers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111097
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  • 5
    Electronic Resource
    Electronic Resource
    Semi-insulating InP grown by chemical beam epitaxy with pentacarbonyliron doping (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2558-2560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present semi-insulating iron-doped InP grown by chemical beam epitaxy using the gaseous source pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113166
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  • 6
    Electronic Resource
    Electronic Resource
    Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2079-2081 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report 10 mW cw room-temperature operation of an electrically pumped vertical-cavity surface-emitting laser diode without a heat sink. This same laser produces 19 mW cw when cooled slightly below room temperature. In addition, we present a 9 mW cw laser with a threshold voltage of 1.6 V, and series resistance of 18 Ω. These are the first surface-emitting lasers fabricated by phase-locked epitaxy. They are also believed to be the highest power and lowest threshold voltage electrically pumped vertical-cavity structures reported to date. These results establish that phase-locked epitaxy has important applications in the fabrication of surface-emitting lasers and many other structures with similar materials requirements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106414
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "Spatial hole burning and self-focusing in vertical-cavity surface-emitting laser diodes'' [Appl. Phys. Lett. 64, 542 (1994)] (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3667-3667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112002
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  • 8
    Electronic Resource
    Electronic Resource
    Relative intensity noise of vertical cavity surface emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the relative intensity noise (RIN) of two all semiconductor vertical cavity surface emitting lasers is presented. We find that the slope of the low frequency RIN agrees with theory for the fundamental mode only and that transverse modes introduce sharp changes in the RIN and put a limit on the minimum attainable RIN. For the fundamental mode, both devices achieve a RIN of less than −140 dB/Hz for optical powers less than 1 mW. This good performance is attributed to the high reflectivity of the cavity mirrors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108731
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  • 9
    Electronic Resource
    Electronic Resource
    Viscous flow induced by counter-rotating vortices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 28 (1985), S. 2687-2698 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of the viscous boundary-layer flow induced near a wall, caused by a pair of counter-rotating vortices above the wall, is investigated. Solutions for the unsteady flow that develops near the wall are obtained numerically for a variety of cases. The vortices are taken to be of equal strength with cores located at equal distances from the wall; depending upon the assumed sense of rotation, the vortices either move toward the wall or recede from it, creating a region of either inflow or outflow near the wall, respectively. The calculated results show that the adverse pressure gradient near the wall induced by the vortex motion gives rise to explosively growing regions of recirculating flow near the wall. The possible relevance of these results to Görtler vortex instability and turbulent flow near walls is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.865226
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  • 10
    Electronic Resource
    Electronic Resource
    Unsteady separation from the leading edge of a thin airfoil (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 8 (1996), S. 704-714 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At high Reynolds numbers, the process leading to dynamic stall on airfoils initiates in the leading-edge region. For thin airfoils, the local motion near rounded leading edges can be represented as flow past a parabola and when the mainstream flow is at an angle of attack to the airfoil, a portion of the boundary layer will be exposed to an adverse pressure gradient. Once the angle of attack exceeds a certain critical value, it is demonstrated that unsteady boundary-layer separation will occur in the leading-edge region in the form of an abrupt focused boundary-layer eruption. This process is believed to initiate the formation of the dynamic stall vortex. For impulsively-started incompressible flow past a parabola, a generic behavior is found to occur over a range of angles of attack, and a limit solution corresponding to relatively large angles is found. The separation in the leading-edge region develops in a zone of relatively limited streamwise extent over a wide range of angles of attack. This suggests that localized control measures (such as suction) may possibly be effective at inhibiting separation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868856
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