GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Effect of different types of surface treatment on the photoelectric and optical properties of CdTe (1997)
    Springer
    Semiconductors 31 (1997), S. 1234-1236 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photoconductivity and light absorption spectra of p-type CdTe single crystals subjected to different treatments have been investigated. It is shown that the photoconductivity and edge absorption in mechanically polished and plastically deformed crystals are determined by the damaged layer. The role of dislocations in the formation of the edge absorption and the photoconductivity spectrum is determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187301
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Acoustostimulated activation of bound defects in CdHgTe alloys (1999)
    Springer
    Semiconductors 33 (1999), S. 398-401 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper describes the results of acoustodynamic studies of the electrical parameters (effective electron concentration n=1/eR H and Hall mobility μ H /ρ) of n-CdxHg1− x crystals (x≈0.22). It is shown that ultrasonic loading (with intensities up to 0.5×104 W/m2) leads to an increase in the values of n and μ H in the impurity-conductivity temperature range (T≈100K). The authors explain the effects observed by invoking acoustostimulated liberation (activation) of donor-like bound defects, leading to a corresponding decrease in the scattering potential of alloy nonuniformities. Characteristic parameters of the acoustoelectric interaction are evaluated in the framework of an assumed dislocation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187701
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Variation in the defect structure of p-CdTe single crystals at the passage of the laser shock wave (2000)
    Springer
    Semiconductors 34 (2000), S. 429-432 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Variations in the minority-carrier lifetime, photoluminescence spectra, dark current and photocurrent temperature dependences of high-resistivity p-CdTe crystals under the action of the laser shock wave are investigated. It is shown that the variations in the aforementioned characteristics during the passage of the shock wave are defined by the generation of the nonequilibrium carriers from deep centers, and, after that, the variations are defined by the formation of intrinsic defects and their subsequent interaction with the defects existing in the initial crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188001
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoconductivity spectra of CdHgTe crystals with photoactive inclusions (1999)
    Springer
    Semiconductors 33 (1999), S. 41-44 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper analyzes how both wide-and narrow-band-gap inclusions in CdHgTe host material affect the generation-recombination behavior of the latter. It is found that the shape of the photoconductivity (PC) spectral characteristic is sensitive to the type of inclusion present in the host: wide-band-gap inclusions lead to additional maxima in the spectral region near the fundamental absorption edge, while narrow-band-gap inclusions wash out the edge at long wavelengths. It is found that the shape of the PC spectra of these nonuniform crystals depends on the magnitude and polarity of the applied bias voltage. A photovoltage which alternates in sign as a function of wavelength and which is similar to the photosensitivity spectra of opposing barriers in graded-gap layers, is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187645
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge (1999)
    Springer
    Semiconductors 33 (1999), S. 1171-1174 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract An analysis has been performed of photoconductivity spectral characteristics of semiconductors with an exponential fundamental absorption edge as functions of the surface recombination rate and sample thickness. It is shown, in particular, that in crystals of CdxHg1−x Te (x≈0.2) the spectral position of the photoconductivity maximum over a wide range of values of these parameters can be used, with an error not exceeding 1%, to determine the effective band gap and, consequently, the composition of the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187842
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Charge carrier mobility in n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing (2000)
    Springer
    Semiconductors 34 (2000), S. 644-649 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The Hall mobility was studied in the n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing (W US≤104 W/m2, f=5–7 MHz). It was found that, in field of the ultrasonic deformation, an increase in the carrier mobility in the impurity conduction region (T〈120 K) and a decrease in the intrinsic conduction region (T〉120 K) occurred in all tested samples. In this case, the magnitude of the sonic-stimulated variation in μH increases with decreasing structural perfection of a crystal. Different mechanisms of ultrasonic influence on μH with regard to scattering by optical phonons, ionized impurities, and alloy potential are analyzed, with the current flow conditions in the crystal taken into account. It is shown that, in the impurity conduction region, the main cause of the sonic-stimulated increase of the Hall mobility is the smoothing of the macroscopic intracrystalline potential that results from the inhomogeneity of the crystals. In the intrinsic conduction region, a decrease in mobility is caused by an increase in the intensity of scattering by the optical phonons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188046
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Activation of impurities in ZnSe crystals, stimulated by a laser shock wave (1999)
    Springer
    Semiconductors 33 (1999), S. 1178-1181 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of a laser shock wave on the photoconductivity spectra and the thermally stimulated conductivity spectra and also on the temperature dependence of the photocurrent and dark current of ZnSe single crystals with different residual impurity levels is investigated. It is shown that a temperature dependence of the dark currents after passage of a shock wave is observed at higher shock-wave pressures for the less defective crystals, while activation of the photocurrent and dark current is due to the release of residual impurities from clusters during passage of the shock wave.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187844
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Photoelectrical and electrical properties of polycrystalline CdxHg1−x Te layers on GaAs substrates (2000)
    Springer
    Semiconductors 34 (2000), S. 255-259 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Temperature dependences of electrical conductivity, concentration, and mobility of electrons, as well as photoconductivity spectra and conductivity-illumination characteristics of Cd0.8Hg0.2Te polycrystalline layers grown on GaAs substrates are studied. The features of charge transport and photoconductivity of CdxHg1−x Te/CdTe/GaAs structures are discussed. It is established that a high photoconductivity at a temperature of 300 K and a jump in conductivity-illumination characteristics at high levels of excitation are caused by the influence of electrically active grain boundaries, which produce the potential barriers for the drift and recombination of charge carriers. It is shown within the framework of the semiconductor barrier model with a random potential relief pattern that, for high levels of excitation by the radiation pulses of ruby or neodymium lasers, the height of potential barriers at the grain boundaries lowers due to screening by nonequilibrium carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187966
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Acceptors in Cd1−x MnxTe (x〈0.1) (1997)
    Springer
    Semiconductors 31 (1997), S. 869-871 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Acceptor defects, which control conductivity and recombination in Cd1−x MnxTe (0⩽x⩽0.1), have been observed experimentally and investigated by electric and luminescence methods. The energy levels of the defects and the composition dependence of the energy levels have been determined. The physicochemical nature of these defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187243
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effect of laser irradiation on the photoconductivity and noise in n-Cdx Hg1−x Te single crystals (1997)
    Springer
    Semiconductors 31 (1997), S. 695-697 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of nanosecond laser radiation on the photoconductivity and 1/f noise in CdxHg1−x Te crystals has been investigated. It is shown that laser irradiation decreases the photosensitivity of the samples and produces a short-wavelength shift of the maximum and the long-wavelength edge of the photoconductivity spectrum. The intensification of 1/f noise and the increase in its frequency are due to a laser-induced increase in the defect density in the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187068
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...