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  • 1
    Electronic Resource
    Electronic Resource
    Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 898-906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress in local isolation structures is studied by micro-Raman spectroscopy. The results are correlated with predictions of an analytical model for the stress distribution and with cross-sectional transmission electron microscopy observations. The measurements are performed on structures on which the Si3N4 oxidation mask is still present. The influence of the pitch of the periodic local isolation pattern, consisting of parallel lines, the thickness of the mask, and the length of the bird's beak on the stress distribution are studied. It is found that compressive stress is present in the Si substrate under the center of the oxidation mask lines, with a magnitude dependent on the width of the lines. Large tensile stress is concentrated under the bird's beak and is found to increase with decreasing length of the bird's beak and with increasing thickness of the Si3N4 film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351311
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  • 2
    Electronic Resource
    Electronic Resource
    A simple technique for the separation of bulk and surface recombination parameters in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6293-6297 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method for the separation of bulk and surface recombination parameters, based on the simultaneous control of time and amplitude characteristics of carrier concentration decay, is presented. To enhance the precision of the parameter extraction procedure, the amplitude is determined using a wavelength resulting in near surface carrier excitation while the effective lifetime is measured for homogeneous bulk excitation. For the fast interpretation of experimental data, a technique using nomographs of amplitude–decay time correlated dependencies on modulation depth is proposed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363705
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  • 3
    Electronic Resource
    Electronic Resource
    Structural characterization of ion-beam synthesized NiSi2 layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion-beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2 layers have been studied by RBS/channeling, x-ray diffraction, and TEM. The results show that the continuous NiSi2 layers have type-A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the 〈111〉 direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360268
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  • 4
    Electronic Resource
    Electronic Resource
    Impact of oxygen related extended defects on silicon diode characteristics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5669-5676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activity of extended lattice defects formed by interstitial oxygen precipitation in silicon is studied. Their impact on diode characteristics and on minority carrier lifetime is addressed for different initial oxygen contents and pretreatments. The carrier traps present in the substrate are studied with deep level transient spectroscopy and with photoluminescence spectroscopy. The obtained electrical results are correlated with those of structural and chemical characterization using cross-section transmission electron microscopy and Fourier transform infrared spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359209
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and properties of ion beam synthesized Si/CoxNi1−xSi2/Si(111) structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1201-1203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial CoxNi1−xSi2 layers with good crystalline quality (χmin=3.5%) have been formed by ion beam synthesis. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The transmission electron microscopy investigation reveals that the type B component is mainly located at the interfaces and with a thickness of only a few monolayers. X-ray diffraction studies of the sample show that the strain of the type B component is smaller than that of the type A and is probably the reason for such a unique distribution of the type B component in the epilayer. Rutherford backscattering-channeling, Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction have been used in this study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356476
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  • 6
    Electronic Resource
    Electronic Resource
    Growth and structural characterization of embedded InAsSb on GaAs-coated patterned silicon by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 928-930 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxial growth of InAsSb on GaAs-coated patterned Si substrates is reported. The epilayers are grown embedded in wells so a coplanar Si-InAsSb surface can be obtained. The InAsSb epilayer morphology is compared for different substrate conditions (Si−well, Si−mesa, GaAs) using Nomarski contrast microscopy. High-voltage electron microscopy shows that the threading defect density of the InAsSb layers is high but decreases with thickness. In the reduced area electron diffraction pattern of the GaAs-InAsSb interface, additional diffraction spots are visible due to microtwins in the InAsSb. High-resolution electron microscopy reveals a regular array of misfit dislocations relieving the 14.2% lattice mismatch in the early stage of growth. Stripping Hall measurements for InAs0.05Sb0.95 show a constant mobility as a function of depth for the top 2 μm of the film and the 300 and 77 K mobility values are comparable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104480
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  • 7
    Electronic Resource
    Electronic Resource
    High energy particle irradiation effects on the low-frequency noise of Czochralski silicon junction diodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 788-790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of high energy particle irradiation on the low-frequency (LF) noise behavior of forward biased Czochralski (Cz) silicon p-n junction diodes is reported. It is shown that in the near-ideal diode region, the LF noise is hardly affected by up to 2×1011 cm−2 MeV proton (H+) and by up to 1015cm−2 MeV electron (e−) irradiations, respectively, and is therefore resistent to both bulk and ionization radiation damage. At higher injection levels, where the forward current and LF noise are series resistance dominated, a clear increase of the noise can be observed due to the high energy particle irradiation, which mainly creates displacement damage in the bulk of the wafer. The same noise observations hold for 60Co γ-irradiated Cz n+p diodes, which were performed for comparison purposes. In the latter case, the main degradation source is ionization damage in the peripheral lateral oxide isolation regions, as shown by reverse current and gated diode measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116533
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  • 8
    Electronic Resource
    Electronic Resource
    Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3930-3932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier recombination centers related with iron complexes in p-type silicon are studied by microwave and light-induced absorption techniques. Both thermal- and photoactivation are used to decompose iron–boron pairs and to study the impact on the recombination lifetime. Due to photodissociation of iron–boron pairs the lifetime increases for high level injection. Efficient recombination occurs via an acceptor level at Ec−0.29 eV as derived from the temperature dependence of carrier lifetime. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114408
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  • 9
    Electronic Resource
    Electronic Resource
    Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1922-1924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of phosphorus-doped silicon deposited at 250 °C from a radio-frequency glow discharge from SiH4 is demonstrated by high-resolution electron microscopy (HREM) and spreading resistance profile measurements. Thin epitaxial films are present at the interface between (100) Si substrates and hydrogenated amorphous silicon. After recrystallization at 700 °C, single-crystal layers are obtained, in which HREM reveals extensive twinning. The fact that epitaxial growth can take place at 250 °C in a system with a background pressure of only 5×10−6 mbar can be attributed to the presence of species in the SiH4 plasma that reduce the native oxide and the use of HF in the cleaning procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98301
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  • 10
    Electronic Resource
    Electronic Resource
    Structural characterization of embedded gallium arsenide on silicon by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1071-1073 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A gallium arsenide film is grown embedded in masked pre-etched wells in silicon vicinal (001) substrates by molecular beam epitaxy. The morphology and crystallinity of the embedded GaAs on Si layers are identical to those of large area GaAs on Si grown on the same wafer, as indicated by the comparison of Nomarski contrast photomicrographs and electron channeling patterns. High-resolution electron microscope images reveal the epitaxial relation of the GaAs/Si interface on the bottom and the sidewall of the wells. On the slope most of the dislocations are restricted to a narrow region near the interface. The same photoluminescent behavior is found for the GaAs deposit in the different silicon environments. This embedded growth technique is suitable for realization of a coplanar GaAs on Si surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100069
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