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  • 1
    Electronic Resource
    Electronic Resource
    Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2739-2742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering by longitudinal optical phonons has been used to study the effect of annealing in a hot Hg bath on 113In+ and 11B+ implanted Cd0.23Hg0.77Te. Up to the highest doses of 1×1013 cm−2 for In and 1×1014 cm−2 for B, respectively, Raman spectroscopy indicates a full recovery of the crystalline perfection for annealing temperatures around 320 °C and annealing times ≥10 min. This recovery is accompanied by an electrical activation of the implants. Control experiments have been carried out to prove that the electrical activity is not due to residual lattice damage and that the immersion in the Hg bath by itself has no effect on the Raman spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353047
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical isolation of GaN by ion implantation damage: Experiment and model (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2441-2443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical isolation of unintentionally doped GaN layers due to the damage created by H+ and He+ ions passing through the layer are demonstrated. As a result of the irradiation, the sample resistance increases by 11 orders of magnitude and the band-to-band photoluminescence (PL) emission is totally quenched. Following annealing (1000 °C, 30 s), the conductivity can be nearly completely recovered, whereas only partial recovery of the PL emission is obtained. A model is proposed which invokes the presence of potential barriers for electronic transport across extended defects as the major factor limiting carrier mobility. Radiation defects increase these barriers, thus affecting the sample resistivity. This model fits the experimental results for both H and He induced damage extremely well and thus proves that defects created by nuclear collisions of the ions traversing the layer are responsible for the observed effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123874
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  • 3
    Electronic Resource
    Electronic Resource
    Loss of electrical conductivity in boron-doped diamond due to ion-induced damage (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 999-1001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The response of B-ion-implanted type-IIa diamond to light ion (H, He) irradiation is investigated by monitoring the sample resistance as a function of dose. It is found that the resistivity of the layer increases rapidly with increasing dose, and reaches the resistivity of the undoped diamond for irradiation doses much less than those required for the onset of damage related electrical conductivity in pristine diamond. It is shown that defects created by the nuclear stopping process act as compensating centers for the B acceptors. The present findings are of importance for the design of radiation hard diamond based electronic devices and suggests a method for the isolation of B-doped devices on a diamond chip. The results of the present work also explain why the collection distance in intrinsic nondoped diamond radiation detectors actually increases with increasing ion dose. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118461
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical activation of B implants in Hg0.79Cd0.21Te by immersion annealing in a hot Hg bath (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1091-1093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical activation of B implants in Hg0.79Cd0.21Te was achieved following annealing by immersion in a hot Hg bath at 320 °C for 8 min. Annealing of the implantation damage and partial electrical activation was obtained after such treatment as deduced from Rutherford backscattering combined with channeling and differential Hall measurements. The possibility that the observed behavior is not due to electrical activity of the B implants but is related to the implantation damage or to the immersion procedure was eliminated by control experiments on Ne-implanted and on nonimplanted samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101714
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  • 5
    Electronic Resource
    Electronic Resource
    Doping of polycrystalline diamond by boron ion implantation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2532-2534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond films, heavily implanted with boron ions (2×1016 cm−2, 60 keV) are found to exhibit, following annealing and graphite removal, electrical properties similar to those obtained for chemical vapor deposited diamond, heavily doped with B during film growth. Control experiments in which carbon ions were implanted and annealed under identical conditions did not show any significant electrical conductivity, verifying that the measured effects are caused by chemical doping due to the presence of B. It is therefore concluded that doping of polycrystalline diamond by ion implantation is possible and graphitization along grain boundaries, that one might have expected to occur as a result of implantation and annealing, does not seem to severely affect the electrical properties of the implantation-doped material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111564
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  • 6
    Electronic Resource
    Electronic Resource
    Can n-type doping of diamond be achieved by Li or Na ion implantation? (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2502-2504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conductivity of Na- and Li-implanted diamond is investigated. The highest conductivities are obtained for high dose implantations followed by thermal graphitization of the heavily damaged layer and chemical removal of the graphitized layer. The temperature dependence of the resistivity is measured, yielding activation energies of 0.2 eV for Li (400〈T〈680 K) and for Na 0.13 eV (220〈T〈400 K) and 0.21 eV (415〈T〈670 K). Analysis of the data shows that the conduction may be understood in terms of variable range hopping between implant sites in the crystal rather than due to thermal activation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110462
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  • 7
    Electronic Resource
    Electronic Resource
    Doping of the layered compound SnS2 by phosphorus ion-implantation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3241-3243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical activation of P implants in the layered semiconductor SnS2 is reported. Low-temperature annealing (300 °C) is shown to remove all implantation related lattice damage, but does not lead to any significant change in the electrical conductivity. Following higher annealing temperatures (up to 500 °C) the conductivity increases by over 5 orders of magnitude. Hall measurements show this conductivity to be n-type. The possibility that the observed electrical behavior is not due to phosphorus donor activity but is related to the implantation damage or to the annealing procedure is eliminated by Ar implantation control experiments which do not show any increased conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106706
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  • 8
    Electronic Resource
    Electronic Resource
    Boron implantation/in situ annealing procedure for optimal p -type properties of diamond (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2264-2266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Record values for high Hall mobility and for low compensation ratio of boron doped diamond by ion implantation are reported. These are achieved, following the suggestion by Prins, by low dose Boron implantation into cold diamond (−97 °C) and in situ rapid heating (1050 °C for 10 min) and by a further anneal at higher temperature (1450 °C for 10 min). Detailed evaluation of Hall effect data and of the temperature dependence of the resistivity over a wide temperature range (200 to 700 K) prove that this implantation/annealing scheme yields p-type behavior of the implanted layer with the highest hole mobility (385 cm2/V s, at room temperature) and the lowest compensation ratio (0.05) ever reported for diamond doped by ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115879
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  • 9
    Electronic Resource
    Electronic Resource
    Damage threshold for ion-beam induced graphitization of diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical dose for graphitization of diamond as a result of ion implantation induced damage (boron and arsenic) and subsequent thermal annealing is determined by combining secondary ion mass spectroscopy measurements, chemical etching of the graphitized layer, and TRIM simulations. Li ions are implanted as a deep marker to accurately determine the position of the graphite/diamond interface. The damage density threshold, beyond which graphitization occurs upon annealing, is found to be 1022 vacancies/cm3. This value is checked against published data and is shown to be of general nature, independent of ion species or implantation energy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115004
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  • 10
    Electronic Resource
    Electronic Resource
    Is sulfur a donor in diamond? (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 757-759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond layers grown by chemical-vapor deposition in the presence of H2S, which were published to exhibit n-type conductivity, are carefully analyzed both electrically and structurally. Hall-effect measurements as a function of temperature clearly show the samples to exhibit p-type conduction, with an activation energy, carrier concentrations, and mobilities which very much resemble those of B-doped p-type diamond. Secondary-ion-mass spectroscopy confirms that indeed the samples, previously claimed to be n type due to a donor state attributed to sulfur, contain enough unintentional boron to explain the observed p-type features. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125885
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