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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon (poly-Si) films grown by ultrahigh-vacuum chemical vapor deposition (UHVCVD) system and then annealed by excimer laser at room temperature have been investigated for the applications in polycrystalline silicon thin-film transistors (poly-Si TFTs). The results showed that the grain size of the laser-annealed poly-Si film decreased with laser energy density when a lower laser energy density below 157.7 mJ/cm2 was used. At about the threshold laser energy density (∼134.5 mJ/cm2), the finest grain structure could be obtained due to the partial melting in the top layer of the film. When the energy density of the excimer laser was larger than the threshold energy density, the large grain growth was initiated. The largest grain structure could be obtained at ∼184 mJ/cm2, while its surface roughness was better than that of the nonannealed UHVCVD poly-Si films. The surface roughening was suggested to arise from the specific melt-regrowth process but not the rapid release of hydrogen or capillary wave mechanism derived from laser-annealed amorphous silicon. By use of the laser-annealed UHVCVD poly-Si films as the active layer, the fabricated poly-Si TFT exhibited a field-effect mobility of 138 cm2/V s, a subthreshold swing of 0.8 V/dec, a threshold voltage of 3.5 V, and an on/off current ratio of ∼106. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Polymer bulletin 25 (1991), S. 253-255 
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary The development of crazes of linear amorphous polymers competes with the occurrence of general yielding in the plastic zone in tensile deformation. For toughened semi-ductile linear amorphous polymers, general yielding in the plastic zone is suppressed by the development of crazes. This suppresion prevents the crack tip from being blunt. Therefore it is recommended that the blunting line be neglected for the evaluation of Jic. For semi-ductile linear amorphous polymers, general yielding in the plastic zone takes place and blunts the crack tip. Thus the blunting line cannot be neglected for the evaluation of Jic.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Polymer bulletin 25 (1991), S. 603-610 
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary The thickening behavior of SMC varies with formulation and operating conditions. During the SMC compounding process, alkaline oxides such as MgO, Mg(OH)2, CaO, Ca(OH)2 are added to the formulation to yield the viscosity build-up from a flowable paste to a semi-solid sheet. The thickening curve of SMC can be divided into three stages: 1. The initial thickening period for the wetting process, 2. The middle thickening rate period for viscosity increasing, 3. The final viscosity period for the molding process. By means of factorial design with an appropriate objective set-up, one is able to define the influence of each factor on thickening curves. Combined with the experimental work on some individual factors, the maturation control system can be further understood and the proper thickening rates can be obtained.
    Type of Medium: Electronic Resource
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