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  • 1
    Electronic Resource
    Electronic Resource
    Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1109-1115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferential alignment is produced for the NL8 thermal double donors (TDDs) when uniaxial stress is applied during their formation at ∼450 °C. The recovery kinetics reveal that they can reorient readily on the time scale of their lifetime and their individual alignments therefore reflect the strain fields that each introduces into the lattice. Analysis reveals that each of the donor cores produces large compressional strain along its C2v [001]′ axis, the magnitude of which decreases monotonically with increase in the TDD species series, suggesting strain relief as the mechanism for nearby oxygen accumulation. The rate and activation energy for the reorientation suggests that the process is limited by the diffusion motion of the nearby interstitial oxygen atoms, with ∼5 jumps being required for TDD3, the third in the series, and progressively more for the subsequent ones. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363854
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of an interstitial carbon-interstitial oxygen complex in silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1103-1105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron paramagnetic resonance spectrum, observed in electron irradiated silicon and labeled Si-G15, is shown to originate from the same carbon-oxygen complex as does the well studied C-line photoluminescence spectrum with zero-phonon line at 0.79 eV. Both the g tensor and the 13C hyperfine tensor for this center are remarkably similar to those for the isolated interstitial carbon atom. Stress-induced alignment experiments reveal the role of oxygen and indicate a unique structure for an interstitial carbon-interstitial oxygen pair.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98754
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  • 3
    Electronic Resource
    Electronic Resource
    Alignment of thermal donors in Si by uniaxial stress (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 346-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal donors generated in Czochralski-Si by heat treatment at around 450 °C can be preferentially aligned by applying a large uniaxial stress during their formation process. This alignment is clearly observed by a polarization of the optical transitions of the thermal donors and a corresponding effect for the paramagnetic NL8 centers. Thus a strong correlation between thermal donors and NL8 is again demonstrated, as well as the extended defectlike nature of such defects. The g3 value of the g tensor and the 2p0 dipole oscillator are found to be oriented preferentially perpendicular to the stress direction, a result which seems to disagree with some of the presently discussed thermal donor models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338829
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