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  • 1
    Electronic Resource
    Electronic Resource
    Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1937-1939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary intersubband transition peak is observed at the wavelength of 13 μm (E0→E1) and a secondary peak at 11 μm (E0→E2). The measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. A peak detectivity of 1×1010 cm Hz1/2/W at 13 μm was achieved at 40 K for these devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122328
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  • 2
    Electronic Resource
    Electronic Resource
    Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2164-2166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the synthesis of (In,Ga)As/GaAs quantum dots on strain-relaxed (In,Ga)As epitaxial films. It is found that the incorporation of a relaxed prelayer provides a systematic and effective method for controlling the dot distribution and emission wavelength. The robustness of the optical properties of quantum dots to dislocations may provide a method for engineering the band structure of quantum dot devices. We demonstrate, for example, that longer band-to-band emission wavelengths can be obtained by simply decreasing the residual strain in the relaxed films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122410
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  • 3
    Electronic Resource
    Electronic Resource
    A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2719-2721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical and electrical properties of a five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector. A primary intersubband transition peak is observed at the wavelength of 10.2 μm and a secondary one at 9.4 μm. Excellent electron transport and peak detectivity of 7×109 cm Hz1/2/W are achieved at 30 K, with a low bias responsivity of up to 70 mA/W at 0.6 V. We believe that an observed avalanche gain process is initiated by intersubband absorption in the quantum dots. The maximum responsivity due to this avalanche multiplication process is about 4 A/W at a bias of 1.0 V. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125127
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  • 4
    Electronic Resource
    Electronic Resource
    Photovoltaic quantum-dot infrared detectors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3301-3303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the operation of photovoltaic quantum-dot infrared detectors fabricated from (In, Ga)As/GaAs heterostructures. These detectors are sensitive to normal incidence light. At zero bias, we obtain a low-temperature (78 K) peak detectivity of 2×108 cm Hz1/2/W, with a responsivity of 1 mA/W at a wavelength of 13 μm for one of the devices. The photovoltaic effect in our detectors is a result of the intrinsic inversion asymmetry of the band structure of self-formed quantum dots. A compensation voltage of 18 mV is measured. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126613
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  • 5
    Electronic Resource
    Electronic Resource
    Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3537-3539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that by increasing the amount of (In, Ga)As deposit in a quantum dot layer, the intersublevel absorption wavelength for (In, Ga)As/GaAs quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 μm while the photoluminescence peak is red-shifted. We directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. We find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126699
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