ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth and electrical characterization of Si delta-doped GaInP grown by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturated as a function of doping time or flow rate. Because of the limitations of Hall-effect measurements, the saturation was explained as the result of electron population in satellite L valley. The mobility enhancement was observed for the delta-doped structure with an enhancement factor of 2–3. A sharp capacitance–voltage profile with a full width at half-maximum of 30 A(ring) was obtained. Depletion-mode Si delta-doped GaInP field-effect transistors with a gate length of 2 μm and gate width of 50 μm were fabricated and showed good device pinch-off characteristics. The extrinsic maximum transconductance of 92 mS/mm was obtained and a broad plateau transconductance profile was observed to confirm the electron confinement in the V-shape potential well of a delta-doped GaInP layer. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362359
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