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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3472-3479 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented from an experimental study of pulsed laser-induced electron and positive-ion emission at 590 nm from single-crystal Cu(100) under ultrahigh-vacuum conditions near the threshold for surface damage. Below 60 MW/cm2 the electron emission is consistent with a three-photon photoemission mechanism. Above 60 MW/cm2 thermionic electron emission becomes dominant. Positive ions are produced with a threshold of approximately 60 MW/cm2 and a slope of 9.5 in a log(yield) vs log(power) plot. The kinetic energy distribution of the ions is nonthermal with a maximum at approximately 0.7 eV. Ion production is most likely due to collisions of thermally desorbed atoms with electrons above the surface. Evidence is presented that suggests a critical role of substrate-emitted electrons in the formation of a laser-induced surface plasma near its low power threshold. It is also found that electron and ion yields from a given spot on the surface decrease with the number of laser pulses and spot receives. The yield from a previously unirradiated spot decreases by an order of magnitude over the course of approximately the first 25 laser pulses approaching a constant level for subsequent pulses. Enhanced yields from new spots could be eliminated by additional annealing of the surface prior to laser irradiation. These observations are consistent with enhanced charged particle yield from surface defects which are reduced in number by subsequent annealing by the laser.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5168-5176 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Theoretical and experimental results are compared for the 257 nm photolysis of methyl iodide adsorbed on an MgO(100) crystal. Molecular-dynamics calculations treat CH3I as a pseudodiatomic molecule and describe the geometry and the vibrational and librational frequencies of ground state CH3I on the surface of a solid at 125 K. The simulations modeled the photodissociation dynamics of the adsorbed species. The photoexcitation of CH3I at 257 nm is to the 3Q0 state which is, in turn, coupled to the 1Q1 state. The electronic surface coupling allows for two dissociation pathways, producing either ground- or excited-state iodine atoms in concert with ground-state methyl radicals. The I*/I branching ratio and the velocity and angular distributions of both photofragments are predicted by the theory. A comparison is made between these predictions and experimental observation of the I*/I branching ratio, the velocity distribution of the methyl fragment, and the internal state distribution of the methyl. A substantial lowering of the I*/I ratio as compared to data from the gas-phase photodissociation studies is both predicted by theory and seen experimentally. Theoretical simulations attribute this change to efficient trapping of the I* photofragments by the surface. Further comparisons between the theoretical predictions and the experimental data support a model where the molecule is aligned perpendicular to the surface and the escape of iodine atoms from the surface following the photodissociation of adsorbed methyl iodide involves collisions with the surface.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 6864-6870 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The desorption dynamics of arsenic from Si(100) and Si(111) are studied by measuring the vibrational population distributions of desorbed As2 using laser-induced fluorescence. In these measurements a steady state flux of desorbing As2 is produced by continuously dosing a heated Si surface with a beam of As4 from a conventional molecular beam epitaxy oven. Measurements of the fluxes of As2 as a function of surface temperature suggest that the As2 may be kinetically formed in two distinct steps: The As4 first chemisorbs to form atoms on the surface which then recombine to desorb as dimers. However, there may also be direct dissociation of As4 at the hot surface. The vibrational populations of As2 (v‘=0–3) desorbed from Si(100) are Boltzmann and indicate a vibrational temperature Tv that is nearly 350 K lower than the surface temperature Ts (Tv=790±100 K vs Ts=1140 K). The vibrational populations of As2 desorbed from Si(111) are not Boltzmann, but also have an effective vibrational temperature 400 K colder than the surface (Tv=730±100 K vs Ts=1140 K). The observed lack of accommodation in the desorption from both surfaces is discussed in terms of the possible mechanisms.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 815-817 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Application of the 118 nm single photon laser ionization technique to a molecular beam epitaxy machine is used for the first time to demonstrate direct desorption of As atoms from Si(100). Both As2 and As are the desorbing species from 1 ML of arsenic on silicon above 1000 K. This is in contrast to previously reported models that considered only dimer desorption. With a continuous flux of As4, the scattered and desorbing arsenic species from Si(100) are examined as a function of surface temperature (650–1200 K). Atomic desorption is large, 75%±19%, above 1000 K, and complete conversion of As4 to As2 and As occurs at 1200 K. The species selectivity of laser ionization time-of-flight mass spectroscopy has broader implications for GaAs growth.
    Type of Medium: Electronic Resource
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