Note: Front Cover -- High Brightness Light Emitting Diodes -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Materials Issues in High-Brightness Light-Emitting Diodes -- I. Introduction -- II. Techniques for Production of III-V Semiconductors for Light-Emitting Diodes -- III. Selection of Materials for High-Brightness Light-Emitting Diodes -- IV. Fundamental Thermodynamicand Kinetic Considerations -- V. Specific Materials Systems -- VI. Conclusions -- References -- Chapter 2. Overview of Device Issues in High-Brightness Light-Emitting Diodes -- I. Introduction -- II. Light-Emitting Diode Device Issues -- III. Technology Status and Future Potential -- References -- Chapter 3. AlGaAs Red Light-Emitting Diodes -- I. Introduction -- II. Device Design -- III. Crystal Growth -- IV. Device Fabrication -- V. Comparison with Other Types of Red Light-Emitting Diodes -- VI. Temperature-Dependent Properties -- VII. Reliability Characteristics. -- References -- Chapter 4. OMVPE Growth of AlGaInP for High-Efficiency Visible Light-Emitting Diodes -- I. Introduction -- II. General Overview of Organometallic Vapor-Phase Epitaxy of AlGaInP -- III. Organometallic Vapor-Phase Epitaxy of AlGaInP-Critical Issues -- IV. High-Volume Manufacturing Issues -- V. Summary -- References -- Chapter 5. AlGaInP Light-Emitting Diodes -- I. Introduction -- II. Active Layer Design -- III. Current-Spreading in Device Structures -- IV. Current-Blocking Structures -- V. Light Extraction -- VI. Wafer Fabrication Techniques -- VII. Device Performance Characteristics -- VIII. Conclusions and Outlook. -- References -- Chapter 6. Applications for High-Brightness Light-Emitting Diodes -- I. Introduction -- II. Photometry and Color Measurement Principles -- III. Automotive Signal Lighting -- IV. Automotive Interior Lighting. -- V. Traffic Signal Lights. , VI. Large-Area Displays -- VII. Liquid Crystal Display Backlighting -- References -- Chapter 7. Organometallic Vapor-Phase Epitaxy of Gallium Nitride for High-Brightness Blue Light-Emitting Diodes -- I. Introduction -- II. Historical Overview -- III. Design and Structure of Nitride-Based Superbright Light-Emitting -- IV. Efficiency, Wavelength, and Lifetime -- V. Laser Diodes -- VI. Summary -- References -- Chapter 8. Group III-V Nitride-Based Ultraviolet Blue-Green-Yellow Light-Emitting Diodes and Laser Diodes -- I. Introduction -- II. Gallium Nitride Growth -- III. InGaN Growth -- IV. Light-Emitting Diodes -- V. InGaN Multiple Quantum Well Structure Laser Diodes -- VI. Summary -- References -- Index -- Contents of Volumes in this Series.

Note: Cover -- Contents -- Preface to the First Edition -- Preface to the Second Edition -- Glossary of Acronyms Used in Text -- Notation for Organometallic Precursor Molecules -- Chapter 1. Overview of the OMVPE Process -- 1.1 Introduction -- 1.2 Comparison of Epitaxial Techniques -- 1.3 Overview of the OMVPE Growth Process -- References -- Chapter 2. Thermodynamics -- 2.1 Basic Thermodynamics of Phase Equilibrium -- 2.2 Phase Diagrams -- 2.3 Thermodynamic Driving Force for Epitaxial Growth -- 2.4 Solid Composition -- 2.5 Quaternary Systems -- 2.6 Thermodynamics of the Surface -- References -- Chapter 3. Physical Processes Occurring on the Surface -- 3.1 Introduction -- 3.2 Surface Measurement Techniques -- 3.3 Direct Observation of Surface Features -- 3.4 Atomic-Level Growth Processes -- 3.5 Effects of Surface Processes on OMVPE Growth -- References -- Chapter 4. Source Molecules -- 4.1 Introduction -- 4.2 Group II Molecules -- 4.3 Group III Molecules -- 4.4 Group V Sources -- 4.5 Group VI Precursor Molecules -- 4.6 Organometallic Dopant Precursors -- References -- Chapter 5. Kinetics -- 5.1 Background -- 5.2 OMVPE Growth Process -- 5.3 Homogeneous Pyrolysis Reactions -- 5.4 Heterogeneous Pyrolysis Reactions -- 5.5 Ordering -- References -- Chapter 6. Hydrodynamics and Mass Transport -- 6.1 Introduction -- 6.2 Complete Hydrodynamic Treatment of OMVPE -- 6.3 Boundary-Layer Model -- 6.4 Approximate Analytical Approach for Horizontal OMVPE Reactors -- 6.5 Application to Reactor Design -- References -- Chapter 7. Design of the OMVPE Process -- 7.1 Consolidated OMVPE Growth Model -- 7.2 Kinetically Limited Growth -- 7.3 Midtemperature, All Pressures -- 7.4 High-Temperature Regime -- 7.5 OMVPE Growth of II/VI Compounds -- 7.6 Design of the Overall Process -- References -- Chapter 8. Specific Materials -- 8.1 GaAs -- 8.2 AlGaAs. , 8.3 GaInAs, AlInAs, and AlGaInAs -- 8.4 InP -- 8.5 GaP, GaInP, and AlGaInP -- 8.6 As/P Alloys -- 8.7 Antimony Compounds and Alloys -- 8.8 III/V Nitrides, AlGaInN -- 8.9 Selective Growth of III/V Semiconductors -- 8.10 II/VI Semiconductors -- 8.11 Group IV Semiconductors -- 8.12 Nonsemiconductor Materials -- References -- Chapter 9. Superlattice Structures -- 9.1 AlGaAs/GaAs -- 9.2 GaInAs/InP -- 9.3 AlGaInP/GaInP -- 9.4 GaInAs/GaAs -- 9.5 AlGaInN -- 9.6 Strain-Layer Superlattices -- 9.7 GaAs on Si Substrates -- 9.8 SiGe Alloys -- 9.9 II/VI Compounds -- 9.10 Doping Superlattices -- 9.11 Atomic-Layer Epitaxy (ALE) -- References -- Chapter 10. Devices -- 10.1 Injection Lasers and LEDS -- 10.2 Photodiodes -- 10.3 Electronic Switching Devices -- 10.4 Solar Cells -- 10.5 Summary -- References -- Index.

Note: Front Cover -- Organometallic Vapor-Phase Epitaxy: Theory and Practice -- Copyright Page -- Table of Contents -- Preface -- Glossary of Acronyms Used in Text -- Notation for Organometallic Precursor Molecules -- Chapter 1. Overview of the OMVPE Process -- 1.1 Introduction -- 1.2 Comparison of Epitaxial Techniques -- 1.3 Overview of the OMVPE Growth Process -- References -- Chapter 2. Source Molecules -- 2.1 Introduction -- 2.2 Group II Molecules -- 2.3 Group III Molecules -- 2.4 Group V Sources -- 2.5 Group VI Precursor Molecules -- 2.6 Organometallic Dopant Precursors -- References -- Chapter 3. Thermodynamics -- 3.1 Basic Thermodynamics of Phase Equilibrium -- 3.2 Phase Diagrams -- 3.3 Thermodynamic Driving Force for Epitaxial Growth -- 3.4 Solid Composition -- 3.5 Quaternary Systems -- References -- Chapter 4. Kinetics -- 4.1 Background -- 4.2 OMVPE Growth Process -- 4.3 Surface Processes -- References -- Chapter 5. Hydrodynamics and Mass Transport -- 5.1 Introduction -- 5.2 Complete Hydrodynamic Treatment of OMVPE -- 5.3 Boundary-Layer Model -- 5.4 Approximate Analytical Approach for OMVPE Reactors -- 5.5 Application to Reactor Design -- References -- Chapter 6. Design of the OMVPE Process -- 6.1 Consolidated OMVPE Growth Model -- 6.2 Kinetically Limited Growth -- 6.3 Mid-Temperature, All Pressures -- 6.4 High-Temperature Regime -- 6.5 OMVPE Growth of II/VI Compounds -- 6.6 Design of the Overall Process -- References -- Chapter 7. Specific Materials -- 7.1 GaAs -- 7.2 AlGaAs -- 7.3 GaInAs and AlInAs -- 7.4 InP -- 7.5 Phosphorus-Containing Materials: GaP, GalnP, and AlGalnP -- 7.6 As/P Alloys -- 7.7 Antimony Compounds -- 7.8 II/VI Semiconductors -- References -- Chapter 8. Superlattice Structures -- 8.1 Conventional OMVPE -- 8.2 Atomic Layer Epitaxy (ALE) -- References -- Chapter 9. Devices -- 9.1 Injection Lasers and LEDs -- 9.2 Photodiodes. , 9.3 Electronic Switching Devices -- 9.4 Solar Cells -- 9.5 Summary -- References -- Index.

Note: Cover -- Half Title -- Title Page -- Copyright Page -- GaAs Symposium Award and Heinrich Welker Gold Medal -- Young Scientist Award -- Preface -- Acknowledgments -- Table of Contents -- Chapter 1: Plenary Papers -- New Directions for III-V Structures: Metal/Semiconductor Heteroepitaxy -- Short Wavelength II-VI Laser Diodes -- Two-Dimensional Electron Optics in GaAs -- Chapter 2: Epitaxy, Mainly Molecular Beam -- Facet Formation Observed in MOMBE of GaAs on a Patterned Substrate -- Atomically Flat AlGaAs/GaAs (110) Heterointerface Grown by Molecular Beam Epitaxy -- Abrupt Hetero Junctions of AlGaAs/GaAs Quantum Wells Grown on (111)A GaAs Substrates by Molecular Beam Epitaxy -- Confinement of Excess Arsenic Incorporated in Thin Layers of MBE-Grown Low-Temperature GaAs -- Etching of GaAs and AlGaAs by H* Radical Produced with a Tungsten Filament -- Reduction in the Outdiffusion into Epitaxial Ge Grown on GaAs Using a Thin Alas Interlayer -- Improvement of the Electrical Properties of MBE Grown Ge Layers and Its Application to Collector-top n-GaAs/p-Ge/n-Ge HBTS -- Defects in Vertical Zone Melt (VZM) GaAs -- Constant Temperature Growth of Uniform-Composition InxGa1-xAs Bulk crystals by Supplying GaAs -- InxAI1-xAs/InP: Organometallic Molecular Beam Epitaxial Growth and Optical Properties -- Strained Quantum Well InGaSb/AIGaSb Heterostructures Grown Bymolecular Beam Epitaxy -- Growth and Characterization of InAs1-xSbx Layers on Gasb Substrates -- An Investigation of the Structural and Insulating Properties of Cubic GaN for GaAs-GaN Semiconductor-Insulator Devices -- Transmission Electron Microscopy Study of Intermetallic Compound Fe3AIxSi1-x Epitaxially Grown on GaAs -- Magneto-Optic and Schottky Barrier Properties of MnAI/Alas/GaAs Heterostructures. , MBE Growth Optimization and Thermal Stability of Strained In0.25Ga0.75As Layers in MODFET Layer Structures -- Thermal Annealing Effects on the Defect and Stress Reduction in Undercut GaAs on Si -- Chapter 3: MESFETs and MODFETs -- Extensive Study on the Effect of Undoped GaAs Layers on MESFET Channels and Its Application for Ku-Band Extra High Output Power Devices -- Characterization of Anomalous Frequency Dispersion in GaAs BP-MESFETs by Direct Large-Signal I-V Measurement -- High Quality and Very Thin Active Layer Formation for Ion Implanted GaAs MESFETs -- Novel Carbon-Doped P-Channel GaAs MESFET Grown by MOMBE -- Pseudomorphic GaAs/GalnAs Pulse-Doped MESFETs Grown by Organometallic Vapor Phase Epitaxy -- Two-Dimensional Electron Gas Analysis on Pseudomorphic Heterojunction Field-Effect Transistor Structures by Photoluminescence -- Investigation of Pseudomorphic InGaAs HEMT Interfaces -- Investigation of Transport Phenomena in Pseudomorphic MODFETs -- Influence of the Doping Position on the Performance of High Speed AlGaAs/InGaAs HFETS with Doped Channels -- A P-Channel Gasb Heterojunction Field-Effect Transistor Based on a Vertically Integrated Complementary Circuit Structure -- Chapter 4: Processing -- Thermally Stable In-Based Ohmic Contacts to P-Type GaAs -- Mushroom Shaped Gates in a Dry Etched Recessed Gate Process -- Epitaxial Al on σ-Doped GaAs: A Reproducible and Very Thermally Stable Low Resistance Non-Alloyed Ohmic Contact to GaAs -- Characteristics of Dry-Etched GaAs P-N Junctions Grown by MOMBE -- Incorporation of Hydrogen into III-V Semiconductors During Growth and Processing -- Improvement of Breakdown Voltage Characteristics of GaAs Junction by Damage-Creation of Ion-Implantation -- Small Size Collector-Up AlGaAs/GaAs HBTs Fabricated Using H+ implantation. , Elimination of Mesa-Sidewall Gate-Leakage in InAlAs/InGaAs HFETs by Selective Sidewall Recessing -- Electrical Properties of N-Type and P-Type Al0.48In0.52As Schottky Barriers -- Selective Area Epitaxial Growth and Fabrication of GaAs MESFETs for Monolithic Microwave Circuits -- Mn Diffusion in GaAs and Its Effect on Impurity-Induced Layer Disordering in GaAs-AlGaAs Superlattices -- Chapter 5: Characterization -- The Effect of Defects and Interfacial Stress on InGaAs/GaAs Heterojunction FET Reliability -- Magneto-Quantum Tunneling Phenomena in AlGaAs/GaAs Resonant Tunneling Diodes -- Study of a Two Dimensional Electron Gas by a New Approach in Modulation Spectroscopy -- Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum-Well Structures -- The Substrate Current by Impact Ionization in GaAs MESFETs -- RHEED Analysis for Stoichiometric GaAs Growth of Migration Enhanced Epitaxy -- Problems in the Use of Epitaxial AlAs Layers as Calibration Standards for the Al Content of AlGaAs/GaAs Layers -- Hot-Electron-Acceptor Luminescence in Quantum Wells: A Quantitative Measurement of the Hole Dispersion Curves -- Novel Frequency Dispersive Transconductance Measurement Technique for Interface States in FETs -- Semi-Insulating Inp Characterized by Photoreflectance -- Confined States in InGaAs/InAlAs Single Quantum Wells Studied by Room Temperature Phototransmitance and Electrotransmitance at Highelectric Fields -- Impact Ionization Phenomena in GaAs MESFETs : Experimental Results and Simulations -- Optically Determined Low-Temperature, High-Mobility Transport in " Interface-Free" GaAs Heterostructures -- Chapter 6: HBTs and InGaAlAs FETs -- In0.52AI0.48As/In0.53Ga0.47As HIGFETs using Novel 0.2 µm Self-Aligned T-Gate Technology -- Reduced Silicon Movement in GalnAs/AlInAs HEMT Structures with Low Temperature AlInAs Spacers. , Effect of N and P channel Doping on the I-V Characteristics of AlInAs-GalnAs HEMTs -- MOVPE Growth, Technology and Characterization of Ga0.5In0.5P/GaAs Heterojunction Bipolar Transistors -- Accumulation Mode GaAlas/GaAs Bipolar Transistor with Two Dimensional Hole Gas Base -- A Two-Dimensional Electron Gas Modulated Resonant Tunneling Transistor -- A Two-Dimensional Electron Gas Emitter AlGaAs/GaAs Heterojunction Bipolar Transistor with Low Offset Voltage -- 1/ F Noise in AlGaAs/GaAs HBTs Using Ultrasensitive Characterization Techniques for Identifying Noise Mechanisms -- Low-Frequency Noise Characterization of NPN AlGaAs/GaAs Heterojunction Bipolar Transistors -- Submicron AlGaAs/GaAs Heterojunction Bipolar Transistor Process with High Current Gain -- Chapter 7: Characterization -- Photoluminescence Analysis of C-Doped NPN AlGaAs/GaAs Heteroj Unction Bipolar Transistors -- Photoluminescence Investigation of AlGaAs/GaAs Heterojunction Bipolar Transistor Layers -- Photoluminescence Study of GaAs Antisite Double Acceptor in GaAs Under Hydrostatic Pressure -- Reflectance Modulation Studies on Laser Diode Mirrors -- Measurement of Minority Hole Zero-Field Diffusivity in N + -GaAs -- Strained-Layer Relaxation by Partial Dislocations -- Chapter 8: Ordering -- Local structures in GalnP on GaAs studied by Fluorescence-Detected EXAFs -- Effect of Step Motion on Ordering in GalnP and GaAsP -- Temperature-Dependent Electron Mobility and Clustering in GaInp2 -- Local Structures of Single-Phase and Two-phase GaAs1-xSbx Studied by Fluorescence-Detected EXAFs -- Growth and Optical Properties of Natural InAs1-xSbx Strained Layer Superlattices -- Chapter 9: Quantum Wells -- Interface-Free GaAs Structures-From Bulk to the Quantum Limit -- Ground-State In-Plane Light-Holes in GaAs/AlGaAs Structures. , Dynamics and Transport of Excitons Confined at High-Quality GaAs/AlxGa1-xAs Interfaces -- Anisotropy in the Interband Transitions of (110) Oriented Quantum Wells -- Ionized-Impurity Scattering of Electrons in Si-Doped GaAs/AlGaAs Quantum Wells in Low and High Electric Fields -- Free Carrier Induced Changes in the Absorption and Refractive Index for Intersubband Optical Transitions in AlxGa1-xAs/GaAs/AlxGa1-xAs Quantum Wells -- Electro-Absorption in InGaAs/AlGaAs Quantum Wells -- Studies of Piezoelectric Effects (111] Oriented Strained Ga1-xInxSb/GaSb Quantum Wells -- Chapter 10: Opto-Electronics -- A Long-Wavelength PIN-FET Receiver OEIC on GaAs Substrate -- Monolithically Integrated Optoelectronic Transmitter by MOVPE -- A Vertically Integrated Driver for Light-Emitting Devices Utilizing Controllable Electro-Optical Positive Feedback -- Heavily P-Doped GaAs/AlGaAs Single Quantum Well Lasers: Growth, Performance and Integration with Heterojunction Bipolar Transistors -- MOCVD Growth of Vertical Cavity Surface-Emitting Lasers with Gradedcomposition mirrors -- Influence of Gain Saturation on the To Values of Short AlGaAs-GaAs Single and Multiple Quantum Well Lasers -- Low Threshold Current Density GalnAsSb/GaAlAsSb DH Lasers Emitting at 2.2 µm -- MBE growth, Material Properties, and Performance of GaSb-Based 2.2 µm diode lasers -- Short Wavelength Operation of Low Threshold Current Algalnp Strained Quantum Well Laser Diodes -- Broad Band Side-Emitting GaAs/AlGaAs/InGaAs Single Quantum Well -- Fabrication of Circular Gratings by FIB Damage on GaAs -- A New Application for III-V Quantum Well Systems-Efficiency Enhancement in Solar Cells -- Theoretical Studies of Impact Ionisation in Pseudomorphic Structures of InGaAlAs on GaAs and InP Substrates. , Evaluation of New Multiple Quantum Well Avalanche Photodiodestructures: The MQW, the Doped Barrier and Doped Quantum Well.