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  • 1
    Electronic Resource
    Electronic Resource
    Carriers induced at the end of a quantum well (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 809-811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The charge distribution of carriers induced at the end of a quantum well by an auxiliary confining potential perpendicular to the plane of the well has been calculated for two examples. The first example considers a selectively doped layer grown epitaxially on a cleaved quantum well structure. The induced electron density in this case is found to be approximately proportional to the width of the well, with an additional charge from the dopants that project outside the well and with a cutoff at very small well widths as the quantum state is driven above the band offset. The second example considers the effect of surface pinning of the Fermi level above the conduction band edge of InAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351819
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  • 2
    Electronic Resource
    Electronic Resource
    Channel sensitivity to gate roughness in a split-gate GaAs-AlGaAs heterostructure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1270-1271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The response of the width of the electron channel at a GaAs-AlGaAs heterointerface to variations in the gate opening of a split-gate structure is calculated using a three-dimensional solution of the Poisson equation in the continuum approximation and is analyzed in terms of the Fourier components of the perturbation. It is found that the effective potential well for the channel electron gas attenuates high wave vector components of the gate roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100736
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  • 3
    Electronic Resource
    Electronic Resource
    High-mobility variable-density two-dimensional electron gas in inverted GaAs-AlGaAs heterojunctions (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1268-1270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inverted heterointerfaces (GaAs on AlGaAs), which are basic constituents of all quantum wells and superlattices, have been significantly improved using electron diffraction and a refined molecular beam epitaxy growth procedure. Utilizing them in a novel structure allowed the variation of the electron density over a wide range, with peak mobilities of 4×105 cm2/V s. The continuously variable electron density allowed comparison to a theoretical analysis of the low-temperature scattering mechanisms, and their relation to the growth process, establishing the importance of interface charges and roughness. High-mobility samples were used to observe the quantum Hall effect with varying carrier concentrations in a single structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99176
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  • 4
    Electronic Resource
    Electronic Resource
    Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1−xGex (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1110-1112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculated results for charge transfer and low-temperature electron mobility in strained silicon grown epitaxially on relaxed Si1−xGex are presented versus the thickness of an undoped spacer layer and other structural and materials parameters. The indicated conduction band offset for Si on relaxed Si0.7Ge0.3 is 180±15 meV. Scattering by the remote doping impurities that supply the carriers is found to be the dominant scattering mechanism in high-mobility samples. Samples with enhanced interface scattering are expected to have a stronger temperature dependence of mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107684
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  • 5
    Electronic Resource
    Electronic Resource
    Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 842-844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report gated Hall effect measurements and the study of electron mobility versus density in high-mobility modulation-doped Si/SiGe heterostructures. Front and back gates have been used to control the electron density and the shape of the electron wave function in the strained Si channel. The gate control on the electron density is modeled using a self-consistent Schrödinger and Poisson equation solution. We find that the electron mobility μ increases with electron density n as μ∝nα, where α is 1.2–1.8 at low n, and 0.7–1.0 at high n. A peak mobility of 5.2×105 cm2/V s at 0.4 K, considerably higher than the value in comparable ungated structures, is achieved when the electron wave function is moved away from the top heterointerface towards the center of the Si channel. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113440
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