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  • 1
    Online Resource
    Online Resource
    Identification of Defects in Semiconductors. (1998)
    San Diego :Elsevier Science & Technology,
    Details
    Keywords: Semiconductors--Defects. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (449 pages)
    Edition: 1st ed.
    ISBN: 9780080864495
    Series Statement: Issn Series
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=405275
    DDC: 540.922
    Language: English
    Note: Front Cover -- Identification of Defects in Semiconductors, Volume 51B -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Optical Measurements of Point Defects -- I. Scope of the chapter -- II. Overview of the techniques -- III. Chemical Identification -- IV. Structural Identification -- V. Radiative lifetime effects -- VI. Spatial localization -- VII. Role of vibrations in "electronic" transitions -- VIII. Electronic excited states -- IX. Zero-phonon Lineshapes -- X. Conclusion -- References -- Chapter 2. Defect Identification Using Capacitance Spectroscopy -- I. Introduction -- II. Characteristics of Deep Levels -- III. Capacitance Spectroscopy Methods -- IV. Defect Identification -- V. Conclusions -- References -- Chapter 3. Vibrational Spectroscopy of Light Element Impurities in Semiconductors -- II. Local Vibrational Modes and Vibrational Spectroscopy -- III. Isotope Shifts -- IV. Anharmonicity -- V. Symmetry, Stress Alignment, and Reorientation Kinetics from Uniaxial Stress Data -- References -- Chapter 4. Defect Processes in Semiconductors Studied at the Atomic Level by Transmission Electron Microscopy -- I. Introduction -- II. Information from HRTEM Lattice Images -- III. Quantitative Analysis by Real-space Methods -- IV. Applications -- V. Conclusions -- References -- Chapter 5. Scanning Tunneling Microscopy of Defects in Semiconductors -- I. Introduction -- II. Imaging and Spectroscopic Techniques, Instrumentation -- III. The GaAs(110) Surface -- IV. Shallow Defects -- V. Deep Level Defects -- VI. Complex Defects -- VII. Conclusion -- References -- Chapter 6. Perturbed Angular Correlation Studies of Defects -- I. Introduction -- II. Experimental Method -- III. Substitutional Dopants -- IV. Light Elements and Transition Metals -- V. Intrinsic Defects -- VI. Summary and Outlook -- Acknowledgement -- References. , Index -- Contents of Volumes in This Series.
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  • 2
    Online Resource
    Online Resource
    Hydrogen in Crystalline Semiconductors. (1992)
    Berlin, Heidelberg :Springer Berlin / Heidelberg,
    Details
    Keywords: Complex compounds. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (374 pages)
    Edition: 1st ed.
    ISBN: 9783642847783
    Series Statement: Springer Series in Materials Science Series ; v.16
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=6502754
    Language: English
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  • 3
    Online Resource
    Online Resource
    Identification of Defects in Semiconductors. (1998)
    San Diego :Elsevier Science & Technology,
    Details
    Keywords: Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (393 pages)
    Edition: 1st ed.
    ISBN: 9780080864488
    Series Statement: Issn Series
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=405274
    DDC: 540.922
    Language: English
    Note: Front Cover -- Identification of Defects in Semiconductors -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. EPR and ENDOR Studies of Defects in Semiconductors -- I. Introduction -- II. The EPR/ENDOR Experiment -- III. Theory of EPR and ENDOR -- IV. Additional Examples -- V. Auxiliary Techniques -- Chapter 2. Magneto-Optical and Electrical Detection of Paramagnetic Resonance in Semiconductors -- I. Introduction -- II. Magneto-Optical Detection of EPR and ENDOR -- III. Electrical Detection of EPR (EDEPR) -- IV. Electrical Detection of ENDOR (EDENDOR) -- V. New Possibilities -- References -- Chapter 3. Magnetic Resonance of Epitaxial Layers Detected by Photoluminescence -- I. Introduction -- II. Fundamentals of ODMR and Epitaxy -- III. Illustrative Example: Bulk InP:Zn -- IV. Examples in Epilayers -- V. Summary and Future Directions -- References -- Chapter 4. μSR on Muonium in Semiconductors and Its Relation to Hydrogen -- I. Introduction -- II. Fundamentals of μSR in Semiconductors -- III. Experimental Techniques and Examples -- IV. Summary -- References -- Chapter 5. Positron Annihilation Spectroscopy of Defects in Semiconductors -- I. Introduction -- II. Positrons in Solids -- III. Positron Trapping -- IV. Experimental Techniques -- V. Identification of Vacancies and Their Charge States -- VI. Negative Ions as Shallow Positron Traps -- VIl. Defects in Layers Studied by a Low-Energy Positron Beam -- VIII. Investigation of Vacancy Ionization Levels -- IX. Investigation of the Atomic Structures of Metastable Defects -- X. Summary -- References -- Chapter 6. The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors -- I. Introduction -- II. The Many-Body Problem -- III. Pseudopotential Theory -- IV. The Real-Space Cluster Method -- V. Self-Consistency and Atomic Forces -- VI. Structural Optimization. , VII. Determination of Vibrational Modes -- VIII. Practical Considerations -- IX. Applications -- X. Summary -- References -- Index -- Contents of Volumes in This Series.
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  • 4
    Electronic Resource
    Electronic Resource
    Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3716-3724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon acceptors in GaAs epitaxial layers grown from metalorganic sources are often partially passivated by hydrogen following growth. Here we examine heavily C-doped GaAs epilayers grown by metalorganic molecular beam epitaxy and metalorganic vapor phase epitaxy by infrared absorption, secondary ion mass spectrometry, and Hall measurements. The concentration of passivated C has been determined by calibrating the intensity of infrared absorption due to C-H complexes. We have investigated the sources of H in the layers and have found that H2 in the growth and annealing ambients is especially effective in passivating C. A brief anneal in an inert ambient at temperatures above 550 °C is sufficient to activate C acceptors that are passivated by H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352902
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen in carbon-doped GaAs grown by metalorganic molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2561-2563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C-H complexes. At the lower C concentrations (〈1019 cm−3) the CAs-H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103817
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogenation of GaAs on Si: Effects on diode reverse leakage current (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 496-498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation for 3 h at 250 °C of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition, followed by a 5-min, 400 °C anneal to restore the passivated shallow donor electrical activity, increases the reverse breakdown voltage of Schottky diode structures from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si. A reduced Schottky barrier height is exhibited by hydrogenated samples, consistent with As depletion of the surface occurring during the long duration plasma processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98378
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  • 7
    Electronic Resource
    Electronic Resource
    Thickness dependence of material quality in GaAs-on-Si grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 775-783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution with increasing layer thickness of the structural and electrical properties of GaAs grown directly on Si or Si-on-insulator (SOI) by metalorganic chemical vapor deposition is reported. There is a substantial improvement in the surface morphology and near-surface crystallinity of the GaAs in thicker films (≥1.5 μm). The implant activation efficiency of 60-keV 29Si ions at a thickness of 4 μm is comparable to that seen in bulk GaAs. The deep level concentration is also observed to decrease with increasing layer thickness. Transmission electron microscopy reveals average defect densities near 108 cm−2 in films deposited either on misoriented or exact (100) Si, and in those grown on SOI.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341141
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342547
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  • 9
    Electronic Resource
    Electronic Resource
    Infrared spectrum of oxygen in silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3114-3116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Weak absorption bands appear at 1720, 1227, and 1013 cm−1 in the infrared spectrum of Czochralski silicon. A study of the stress-induced dichroism of these features has been performed to confirm assignment of these bands to combination and overtone modes of interstitial oxygen vibrations. We show that the 1720- and 1227-cm−1 bands involve the antisymmetric stretching mode of vibration which also gives rise to the well-known interstitial oxygen band at 1106 cm−1 (the 9-μm band). Our results are inconclusive for the 1013-cm−1 line.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337814
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  • 10
    Electronic Resource
    Electronic Resource
    Passivation of shallow impurities in Si by annealing in H2 at high temperature (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2121-2123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found by infrared absorption that shallow acceptors in Si can be passivated throughout the bulk of a semiconductor sample several mm thick by annealing in H2 at high temperature ((approximately-greater-than)900 °C) and quenching to room temperature. The total number of shallow centers passivated in such samples is comparable to the number in highly doped surface layers passivated in a hydrogen plasma at lower temperature (typically 〈400 °C). The importance of bulk passivation techniques is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106099
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