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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 884-890 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurement of strain in patterned Al–Cu interconnect lines with x-ray microdiffraction technique with a ∼1 μm spatial resolution. Monochromatized x rays from an undulator were focused on the sample using a phase fresnel zone plate and diffracted light was collected by an area detector in a symmetric, angle dispersive x-ray diffraction geometry. Measurements were made before and after the line sample was stressed for electromigration. Results show an increase in inter- and intra-grain strain variation after the testing. Differences in strain behavior of grains with (111) and (200) crystallographic planes parallel to the substrate surface were observed. A position dependent variation of strain after the testing was measured whereas no such dependence was found before the testing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 22-24 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the surface properties of patterned Al(Cu) lines related to the electromigration phenomena using photoemission spectromicroscopy techniques. We stressed the lines for electromigration in situ in the ultrahigh vacuum microscope chamber and observed the changes on the line surface. Our results show surface precipitation of Cu beneath the Al2O3 layer on the line surface as well as on side walls. Enrichment of grain boundaries in Cu due to electromigration flux was observed in areas downstream of voids with respect to the electron flow. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2328-2330 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extreme ultraviolet (EUV, λ=13 nm) lithography is considered to be the most likely technology to follow ultraviolet (optical) lithography. One of the challenging aspects is the development of suitable resist materials and processes. This development requires the ability to produce high-resolution patterns. Until now, this ability has been severely limited by the lack of sources and imaging systems. We report printing of 38 nm period grating patterns by interferometric lithography technique with EUV light. A Lloyd's Mirror interferometer was used, reflecting part of an incident beam with a mirror at grazing incidence and letting it interfere with the direct beam at the wafer plane. High-density fringes (38 nm pitch) were easily produced. Monochromatized light of 13 nm wavelength from an undulator in an electron storage ring provided the necessary temporal and spatial coherence along with sufficient intensity flux. This simple technique can be extended to sub-10 nm resolution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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