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  • 1
    Electronic Resource
    Electronic Resource
    TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2800-2807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactions of Ti/Al couples induced by furnace annealing were investigated (at elevated temperature) using large-grained Al substrates and vacuum-evaporated bilayers of both sequences. 4 He MeV backscattering spectrometry was principally used to monitor the reactions. Profiles of oxygen impurity were obtained by elastic 16 O(α,α)16 O resonant scattering. In the range of 460–515 °C, TiAl3 forms as a laterally uniform layer at the Ti/Al interface. The thickness of this compound layer increases as (annealing time)1/2. The activation energy is 1.9–2.0±0.1 eV. For evaporated bilayers on an oxidized Si substrate, the sequence of the bilayers does not effect the growth mechanism of TiAl3 , but the growth rate of samples with the Ti on top is lower than that of samples with Al on top, that is, oxygen in Ti/Al samples can reduce the reaction rate by decreasing the pre-exponential factor. Oxygen already contained in the Ti film and oxygen from the annealing ambient are incorporated in the growing TiAl3 compound during thermal annealing. In addition, a TiAl3 layer also forms at the free Ti surface during vacuum annealing when the oxygen-containing contaminants in the ambient are minimized. So far, we succeeded in accomplishing this only for large-grained Al substrates. We conclude that the formation of the TiAl3 compound at the surface is controlled by nucleation and depends sensitively on the condition of the surface layer of the Ti film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340981
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    WxN1−x alloys as diffusion barriers between Al and Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2787-2789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactively sputtered tungsten nitride (WxN1−x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n+ -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n+ -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into 〈Si〉 through the WxN1−x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341579
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of reactively sputtered Mo1−x O x films (1988)
    Springer
    Applied physics 45 (1988), S. 265-270 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.-z ; 81.60.Bb
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Molybdenum oxide (Mo1−xOx) films were prepared by reactive rf sputtering of a Mo target in O2/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the Mo1−xOx films decreases with sputtering power and increases with the partial pressure of oxygen. Mo1−xOx films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting Mo1−xOx is compressive. Such M1−xOx films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617930
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