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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 350-352 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental determination of the free energy barrier to nucleation of amorphous-to-crystalline transformation reveals a selection principle for the average scale of crystalline microstructure of partially or fully crystallized materials prepared by crystallization of the amorphous precursors: it is determined by the free energy barrier to nucleation, and minimization of the free energy barrier leads to the formation of the finest crystalline microstructure. It is found that the nucleation at the temperature at which an amorphous alloy is crystallized with the finest crystalline microstructure is an isoenergetic process, the free energy barrier to the nucleation of crystallites at that temperature is contributed only by the entropic change. A model is developed to explain these observations that may provide a unified principle for designing materials with desirable scale of microstructure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 841-843 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the degree of supercooling (ΔT−) of melts preceding the onset of solidification on the level of melt overheating (ΔT+)above the equilibrium liquidus or melting temperature, is investigated on Sn and SnPb. We demonstrate the dependence of ΔT− on ΔT+ can be either abrupt or continuous, depending on the length of holding time. In particular, the dependence is bounded by two discontinuous limits, and the known continuous linear relationship between ΔT− and ΔT+ is only a special possibility. Our observations can be tentatively linked to the transient structural evolution of melts, and are probably general, occurring also for element Bi and SnSb. Our results may have important consequences for any thermal modeling of electronics manufacturing involving soldering operations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 7964-7966 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The degree of overheating of a melt often plays a significant role in determining its supercooling behavior and thus the nucleation and growth of crystals and their qualities. However, the relationship between the level of melt overheating and the resulting degree of supercooling is far from being understood. It is demonstrated that the dependence of the degree of supercooling on the level of melt overheating for bismuth is a function of the duration of melt overheating above its melting point. Depending on the duration, the degree of supercooling can increase either discontinuously or continuously with the level of melt overheating. These observations, which can be linked to the transient evolution of short-range structures during melting and solidification, suggest that the similar observations should also be observable for substances exhibiting substantially different short-range structures in the solid and liquid state. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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