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  • 1
    Keywords: Semiconductors -- Congresses. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (532 pages)
    Edition: 1st ed.
    ISBN: 9781483286860
    Language: English
    Note: Front Cover -- Hot Carriers in Semiconductors -- Copyright Page -- Table of Contents -- Committees and Sponsors -- Conference Photograph -- FOREWORD -- OPENING ADDRESS -- PART 1: REAL SPACE TRANSFER/HETEROSTRUCTURES -- CHAPTER 1. REAL SPACE TRANSFER: GENERALIZED APPROACH TO TRANSPORT IN CONFINED GEOMETRIES -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- THEORETICAL BACKGROUND -- GENERAL CONSEQUENCES FOR RST IN ELECTRONIC TRANSPORT -- CONCLUSIONS -- ACKNOWLEDGEMENTS -- REFERENCES -- CHAPTER 2. REAL SPACE HOT ELECTRON DISTRIBUTIONS AND TRANSFER EFFECTS IN HETEROSTRUCTURES -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- SIMULATIONS OF REAL SPACE TRANSFER OF HOT ELECTRONS -- RESULTS AND DISCUSSIONS -- REFERENCES -- CHAPTER 3. MICROSCOPIC HIGH FIELD TRANSPORT IN GRADED HETEROSTRUCTURES -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- HOT ELECTRON TRANSPORT IN GRADED HETEROSTRUCTURES -- HIGH ENERGY INJECTION ACROSS HETEROJUNCTIONS -- ACKNOWLEDGEMENTS -- REFERENCES -- CHAPTER 4. MONTE-CARLO STUDY OF THE DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR -- ABSTRACT -- INTRODUCTION -- THE MONTE-CARLO RESULTS -- THE ANALYTICAL MODEL -- SUMMARY -- ACKNOWLEDGEMENT -- REFERENCES -- CHAPTER 5. ELECTRON VELOCITY AT HIGH ELECTRIC FIELDS IN AlGaAs/GaAs MODULATION-DOPED HETEROSTRUCTURES -- REFERENCES -- Chapter 6. Hot Carrier Trapping in GaAs/AlGaAs Single Quantum Wells With Different Confinement Structures -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENTAL -- RESULTS AND DISCUSSION -- CONCLUSION -- ACKNOWLEGDEMENT -- REFERENCES -- CHAPTER 7. COLLECTIVE ELECTRON INTERACTION IN DOUBLE-BARRIER GaAs TRANSISTORS -- ABSTRACT -- KEYWORDS -- REFERENCES -- CHAPTER 8. SIMULATIONS OF NONLINEAR TRANSPORTIN AlGaAs/GaAs SINGLE WELL HETEROSTRUCTURES -- KEYWORDS -- SUMMARY ABSTRACT -- REFERENCES -- CHAPTER 9. REAL SPACE TRANSFER OF TWO DIMENSIONAL ELECTRONS IN DOUBLE QUANTUM WELL STRUCTURES. , ABSTRACT -- KEYWORDS -- INTRODUCTION -- DEVICE STRUCTURE AND PRINCIPLE OF OPERATION -- ELECTRON TEMPERATURE -- HALL MOBILITY -- MECHANISM OF TRANSFER AND DEVICE SPEED -- SUMMARY -- ACKNOWLEDGEMENT -- REFERENCES -- Chapter 10. Ensemble Monte Carlo Simulation of Real Space Transfer (NERFET/CHINT) Devices -- KEYWORDS -- SUMMARY ABSTRACT -- ACKNOWLEDGEMENTS -- REFERENCES -- Chapter 11. Effect of Continuum Resonances on Hot Carrier Transport in Quantum Wells -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- MODEL -- MATRIX ELEMENTS -- DISCUSSION and CONCLUSION -- ACKNOWLEDGEMENT -- REFERENCES -- CHAPTER 12. ON THE ANALYTICAL APPROACH TO THE REAL SPACE ELECTRON TRANSFER IN GaAs-AlGaAs HETEROSTRUCTURES -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- ANALYTICAL MODEL FOR RSET AND DISCUSSION OF RESULTS -- ACKNOWLEDGEMENT -- REFERENCES -- CHAPTER 13. DIFFUSION COEFFICIENTS OF TWO-DIMENSIONAL ELECTRON GAS IN HETEROJUNCTIONS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- THE MODEL -- SIMULATION RESULTS AT LOW AND MEDIUM FIELDS -- SIMULATION RESULTS AT HIGHER FIELDS -- DISCUSSION AND COMMENTS -- REFERENCES -- CHAPTER 14. HOT ELECTRON DISTRIBUTION AND TRANSPORTIN AlGaAs/GaAs/AlGaAs QUANTUM WELLS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- ELECTRIC FIELD DEPENDENT PHOTOLUMINESCENCE SPECTRA -- ENERGY LOSS PROCESSES OF HOT ELECTRONS -- CONCLUSION -- ACKNOWLEDGEMENT -- REFERENCES -- CHAPTER 15. REDUCED INTERVALLEY TRANSFER IN A GaAs-AlGaAs HETEROJUNCTION -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- THEORY -- RESULTS -- CONCLUSION -- ACKNOWLEDGEMENT -- REFERENCES -- CHAPTER 16. ULTRAFAST S-TYPE NDC AND SELF-OSCILLATIONS UNDER VERTICAL TRANSPORT IN MULTILAYER HETEROSTRUCTURES -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- BALANCE EQUATIONS AND I-U CHARACTERISTIC -- SELP-OSCILLATIONS -- CONCLUSIONS -- REFERENCES. , CHAPTER 17. ELECTRON TRANSPORT IN GaAs/AlxGa1-xAs HETEROJUNCTIONS AT LOW TEMPERATURES -- Abstract -- 1. INTRODUCTION -- 2. SCATTERING MECHANISMS AND SIMULATION METHOD -- 3. RESULTS AND CONCLUSION -- REFERENCES -- CHAPTER 18. MAGNETIC FIELD-DEPENDENT HOT CARRIER RELAXATION IN GaAs QUANTUM WELLS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- CALCULATION -- COMPARISON WITH EXPERIMENT -- CONCLUSION -- REFERENCES -- CHAPTER 19. WARM ELECTRON COEFFICIENT OF TWO DIMENSIONAL ELECTRON GAS IN A GaAs-AlGaAs HETEROJUNCTIONS AT LOW TEMPERATURES -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- THEORY -- RESULTS AND DISCUSSIONS -- ACKNOWLEDGEMENTS -- REFERENCES -- PART 2: ULTRAFAST STUDIES -- CHAPTER 20. FEMTOSECOND SPECTROSCOPY AND TRANSPORT -- ABSTRACT -- INTRODUCTION -- EXPERIMENTS -- SUMMARY -- REFERENCES -- CHAPTER 21. ULTRAFAST RELAXATION OF HOT PHOTOEXCITED CARRIERS IN GaAs -- ABSTRACT -- INTRODUCTION -- THE APPROACH -- CARRIERS-CARRIER INTERACTIONS -- NON-EQUILIBRIUM PHONONS -- ANALYTICAL SOLUTIONS -- CONCLUSIONS -- REFERENCES -- CHAPTER 22. HEATING OF COLD ELECTRONS BY A WARM GaAs LATTICE: A NOVEL PROBE TO CARRIER-PHONON INTERACTION -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENTAL -- RESULTS AND DISCUSSION -- ACKNOWLEDGMENTS -- REFERENCES -- CHAPTER 23. INTERSUBBAND RELAXATION OF PHOTOEXCITED HOT CARRIERS IN QUANTUM WELLS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- TIME-RESOLVED RAMAN TECHNIQUE -- RESULTS -- INTERPRETATION -- ACKNOWLEDGEMENTS -- REFERENCES -- Chapter 24. Secondary Emission Studies of Hot Carrier Relaxation in Polar Semiconductors -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENT -- LO PHONON GENERATION AND DECAY IN GaAs -- WAVEVECTOR DEPENDENCE OF THE HOT PHONON DISTRIBUTION -- HOT PHONON GENERATION IN AlxGa1-xAs -- CONCLUSIONS -- ACKNOWLEGEMENTS -- REFERENCES. , CHAPTER 25. HIGH DENSITY FEMTOSECOND EXCITATION OF NONTHERMAL CARRIER DISTRIBUTIONS IN INTRINSIC AND MODULATION DOPED GaAs QUANTUM WELLS -- ABSTRACT -- KEY WORDS -- INTRODUCTION -- SUMMARY -- ACKNOWLEDGEMENTS -- REFERENCES -- CHAPTER 26. HOT CARRIER ENERGY LOSS RATES IN GalnAs/InP QUANTUM WELLS -- ABSTRACT -- KEYWORDS -- REFERENCES -- CHAPTER 27. INITIAL RELAXATION OF PHOTOEXCITED CARRIERS IN GaAs AND GaAs QUANTUM WELLS UNDER SUBPICOSECOND EXCITATION -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENT -- RESULTS -- ANALYSIS -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCES -- CHAPTER 28. FEMTOSECOND RELAXATION DYNAMICS OF NONEQUILIBRIUM CARRIERS IN GaAs AND RELATED COMPOUNDS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- RESULTS -- REFERENCES -- CHAPTER 29. FEMTOSECOND HOT CARRIER ENERGY REDISTRIBUTIONIN GaAs AND AlGaAs -- ABSTRACT -- KEYWORDS -- ACKNOWLEDGMENTS -- REFERENCES -- CHAPTER 30. HOT CARRIER RELAXATION IN HIGHLY EXCITED III-V COMPOUNDS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENTAL RESULTS -- SUMMARY -- ACKNOWLEDGEMENT -- REFERENCES -- Chapter 31. Nonequilibrium Phonon Effects on the Time-Dependent Relaxation of Hot Carriers in GaAs MQW -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- SAMPLE and EXPERIMENT -- RESULTS and DISCUSSION -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCE -- CHAPTER 32. PICOSECOND RAMAN SCATTERING FROM NON-EQUILIBRIUM LO AND TO PHONONS IN GERMANIUM -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENT -- RESULTS AND DISCUSSION -- ACKNOWLEDGEMENT -- REFERENCES -- CHAPTER 33. ENERGY RELAXATION IN p-AND n-GaAs QUANTUM WELLS: CONFINEMENT EFFECTS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- LOW EXCITATION DENSITY -- HIGH DENSITY EXCITATION -- CONCLUSIONS -- REFERENCES -- CHAPTER 34. ELECTRON-ELECTRON SCATTERING DURING FEMTOSECOND PHOTOEXCITATION IN QUANTUM WELLS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- THEORETICAL MODEL. , RESULTS AND DISCUSSION -- ACKNOWLEDGEMENTS -- REFERENCES -- CHAPTER 35. ENSEMBLE MONTE CARLO SIMULATIONS OF FEMTOSECOND ENERGY RELAXATION OF PHOTOEXCITED ELECTRONS IN BULK GaAs -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- MONTE CARLO SIMULATIONS -- RESULTS -- CONCLUSIONS -- ACKNOWLEDGEMENTS -- REFERENCES -- CHAPTER 36. CARRIER-CARRIER INTERACTION AND INTERVALLEY TRANSFER EFFECTS ON THE ULTRAFAST RELAXATION OF PHOTOEXCITED ELECTRONS IN GaAs -- ABSTRACT -- INTRODUCTION -- THEORY -- RESULTS AND DISCUSSION -- SUMMARY -- ACKNOWLEDGMENT -- REFERENCES -- PART 3: OPTICAL STUDIES -- CHAPTER 37. HOLE-ACOUSTIC PHONON ENERGY LOSS RATES IN GaAs QUANTUM WELLS DETERMINED BY LIGHTS SCATTERING -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENTAL -- RESULTS AND DISCUSSION -- ACKNOWLEDGEMENT -- REFERENCES -- CHAPTER 38. HOT CARRIER RELAXATION PHENOMENA DETECTED BY OPTICALLY INDUCED MAGNETIZATION -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- EXPERIMENTS AND ANALYSIS -- DISCUSSION -- ACKNOWLEDGMENTS -- REFERENCES -- CHAPTER 39. HIGH RESOLUTION STUDIES OF 2 D PLASMA TRANSPORT IN GaAs/GaAlAs QUANTUM WELLS -- ABSTRACT -- KEYWORDS -- REFERENCES -- CHAPTER 40. ENERGY AND SPIN POLARIZATION ANALYSIS OF NEAR BAND GAP PHOTOEMISSION IN AlGaAs/GaAs HETEROSTRUCTURES -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- PHOTOEMISSION YIELD -- ENERGY DISTRIBUTION CURVES -- SPIN POLARIZATION -- REFERENCES -- CHAPTER 41. LASER INDUCED COOLING OF HOT ELECTRONS IN n-InSb BY FREE CARRIER ASSISTED TRANSITIONS -- ABSTRACT -- KEYWORDS -- INTRODUCTION -- THEORY -- EXPERIMENTAL RESULTS -- CONCLUSIONS -- REFERENCES -- CHAPTER 42. TRANSPORT IN PHOTOEXCITED HOT CARRIERS SYSTEMS -- ABSTRACT -- KEYWORDS -- STRUCTURED HOT PHOTOINJECTED CARRIERS MOBILITY -- ACKNOWLEDGEMENTS -- REFERENCES. , CHAPTER 43. HOT ELECTRON ENERGY RELAXATION VIA ACOUSTIC PHONON EMISSION IN InP/ln0.53Ga0.47As HETEROSTRUCTURES AND SINGLE QUANTUM WELLS.
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  • 2
    Online Resource
    Online Resource
    Berlin, Heidelberg :Springer Berlin / Heidelberg,
    Keywords: Neck -- Dissection. ; Electronic books.
    Description / Table of Contents: This brilliantly illustrated manual on neck dissection is a roadmap for advanced surgeons and beginners alike. It guides the reader through the cervical structures with practical step-by-step exercises.
    Type of Medium: Online Resource
    Pages: 1 online resource (119 pages)
    Edition: 1st ed.
    ISBN: 9783540716396
    DDC: 611
    Language: English
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2199-2201 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using metal organic chemical vapor deposition, we have fabricated self-organized quantum dots that emit efficiently at 1.3 μm at room temperature. They are grown on GaAs and consist of InAs covered with an InGaAs cap layer. Their density is 2×1010 cm−2 as determined by transmission electron microscopy. Room-temperature photoluminescence shows a 36 meV broad line at 1.3 μm, corresponding to the quantum-dot ground state, with excellent uniformity across the wafer. The efficiency of this emission is reduced only by a factor of 4 with respect to low temperature showing the high quality of the sample. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1516-1518 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed calculation of the amplitude and phase response of ultrathin ZnTe and GaP electro-optic sensors is presented. We demonstrate that the inclusion of the dispersion of the second-order nonlinearity is essential. Significant structures in experimental data can be explained by the theoretical response function. Correcting for the detector characteristics, we determine the precise shape of electromagnetic transients with a time resolution of 20 fs. In addition, we show that ultrafast transport of photocarriers in semiconductors can act as an efficient source for coherent electromagnetic radiation covering the entire far-to-mid-infrared regime. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2650-2652 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of highly nondegenerate four-wave mixing from a semiconductor microcavity. The phase mismatch originating from the unique relationship between a beam incidence angle and its cavity resonance frequency was minimized by using a new method where both of pump and probe beams are obliquely incident. External efficiency of 1.6% was measured at 10 K for 1.5 THz frequency conversion of probe pulses by using 1 ps pump pulses of 55 pJ incident pulse energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 745-747 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room-temperature confinement and photoluminescence near 3 μm in a mercury cadmium telluride multiple quantum well. The absorption spectra show transitions from the first heavy and light hole confined levels to the first conduction electron confined level. Photoluminescence is present even at room temperature. The transition energies and temperature dependence of our data can be described by a square well model provided that a temperature-independent value of approximately 400 meV is used for the HgTe-CdTe valence-band offset.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1570-1572 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied P ion implantation induced intermixing of In0.53Ga0.47As quantum wells embedded between InP barriers. Data are presented for both standard furnace anneals at 650 °C and rapid thermal anneals at 750 °C. Low-temperature photoluminescence and quantitative Auger electron spectroscopy were performed for furnace-annealed samples for which photoluminescence shifts of ∼200 meV were in excellent agreement with the calculated band gap for the lattice matched composition determined by Auger spectroscopy. Photoluminescence studies of rapid thermal annealed samples yield an energy gap shift of ∼150 meV for annealing times of at least 10 s.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1028-1030 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a time-resolved luminescence study of the dynamics of carrier capture in a strained quantum well of InGaAs embedded in GaAs confining layers. Efficient carrier capture takes place at low temperature (T〈70 K) and low excitation density (∼250 nJ/cm2 per pulse), while at room temperature and higher excitation density the rate of carrier collection decreases as the carriers fill all the available states in the quantum well allowed by the Fermi–Dirac statistics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2089-2090 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measurement of intervalley scattering rates for optically excited carriers in GaAs. The measurements were performed using optical pulses of 6 fs duration and an energy distribution centered at 2.0 eV. The average rates for Γ→X and Γ→L intervalley scattering were separately estimated by varying the sample temperature.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1815-1817 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a new GaAs/AlxGa1−xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and holes, as well as for the two-dimensional confinement of electrons. A time-of-flight measurement of the majority-electron drift velocity at room temperature is demonstrated.
    Type of Medium: Electronic Resource
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