GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Keywords
Publisher
Language
Years
  • 1
    Online Resource
    Online Resource
    Fortschritte der Chemie Organischer Naturstoffe / Progress in the Chemistry of Organic Natural Products. (1975)
    Vienna :Springer Wien,
    Details
    Keywords: Chemistry, Organic-Periodicals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (568 pages)
    Edition: 1st ed.
    ISBN: 9783709170830
    Series Statement: Fortschritte der Chemie Organischer Naturstoffe Progress in the Chemistry of Organic Natural Products Series ; v.32
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=6556787
    Language: English
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    GEOMAR EBL
  • 2
    Electronic Resource
    Electronic Resource
    Interaction of iron with a grain boundary in boron-doped multicrystalline silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3725-3728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The article presents a study of the interaction of iron with a grain boundary in boron-doped multicrystalline silicon. The sample was intentionally contaminated with iron to a few 1014 cm−3 and investigated by the electron-beam-induced-current technique (measurement of minority-carrier diffusion length, quantitative imaging) in the temperature range 80–300 K. The measurements were carried out for two different states of iron in the sample: (i) iron paired with boron, i.e., as FeB, and (ii) iron as interstitial iron Fei. The differences between diffusion lengths for these two states were used to estimate the iron concentration. The analysis of the data revealed a pronounced iron profile around the grain boundary, indicating gettering of about 4×1011 iron atoms per cm2. The recombination velocity of the grain boundary is about 5×105 cm s−1 at 300 K and is not changed by the FeB destruction treatment. The temperature dependence of the iron-related diffusion length components is discussed and found to be in satisfactory agreement with what is expected from Shockley–Read–Hall theory. Further, the diffusion length analysis revealed also a strong recombination channel of unidentified origin. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358611
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re-evaluation using ultrathin quantum wells as a probe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1501-1510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the metalorganic vapor phase epitaxy growth of ultrathin GaInAs/InP and GaAs/InP quantum well (QW) structures using photoluminescence (PL) spectra as a probe for interface effects. In parallel we have also studied InAsxP1−x "interface QWs'' formed by simply exposing InP to AsH3. We see a correlation between QW properties (PL peak position, effective thickness, PL half-width) and the surface phase during the growth of the QW material. For GaAs QWs grown under conditions where typically the As-excess c(4×4)/d(4×4)- or (1×2)-like (with As double layers) surface reconstructions, we find a strong red-shift of the PL peak positions. The red-shift becomes smaller the closer the growth conditions come toward the border to the (2×4) reconstruction (with only one As-termination layer). We thus conclude that the surface itself is one source for As carryover. For GaInAs QWs a boundary between an As-excess/no As-excess surface reconstruction seems to exist at higher AsH3/lower T values. Near to this border GaInAs QWs can be deposited which show PL-half-widths between 7 and 11 meV even for the range of 1–5 ML nominal thickness. The P/As replacement reaction at the lower interface is for short AsH3 interaction times (≤1 s) restricted to less than 1 ML and contributes a relatively constant amount to the effective thickness of the QW. Similarly, we show that InAsxP1−x interface QWs formed by short time interaction of InP and AsH3, originate less from a reaction into the depth of the InP, but more from a consumption of the As which is adsorbed onto the InP surface after the AsH3 treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356385
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3144-3148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice matched {InP/GaInAs}30/InP[001] superlattice containing an enlarged quantum well (EQW) was investigated by means of grazing incidence x-ray diffraction (GID) using synchrotron radiation. The in-plane (220) rocking curve was measured choosing a grazing angle for the incident beam with respect to the surface, αi. At the angular position of maximum intensity we recorded the intensity distribution of the reflected beam normal to the surface (rod scan) using a position sensitive detector. The rod contains information about the density variation towards the surface normal. Instead of a single superlattice Bragg peak we found a double peak which can be explained by the phase shift of the partial x-ray waves scattered at the two superlattices sandwitching the EQW. For fixed αithe intensity ratio of the two peaks is a measure of the EQW thickness. An additional advantage of the GID technique is that this ratio can be modified by changing the penetration depth of the probing x-ray beam into the sample. This is performed by keeping αi smaller or larger than the critical angle for total external reflection. The EQW thickness and its position below the surface is determined by simulation of the recorded rod scans using the kinematic approach of the GID. Both quantities are obtained with monolayer accuracy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360001
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Modeling of poling behavior of ferroelectric 1-3 composites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5040-5047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoelectric 1-3 composites are typically prepared from a polymer matrix and an unpoled Pb(ZrxTi1−x)O3 (PZT) based ceramic. During the subsequent poling process the PZT cannot strain freely due to the clamping by the surrounding polymer, which after poling results in the occurrence of residual mechanical stress in the composite. The poling process is investigated theoretically by a nonlinear finite element method modeling, which takes into account the ferroelectric and ferroelastic properties of PZT ceramics. Furthermore, an analytical model is developed, which predicts the remanent strain of the composite and the residual mechanical stress. The compressive residual mechanical stress acting on the PZT in the poling direction increases continuously with decreasing volume content va of the PZT ceramic. For values of va higher than about 20% it is lower than half of the coercive stress necessary to cause a mechanical depolarization. For va lower than 20% the residual stress rises rapidly. It may cause a mechanical depolarization of the PZT ceramic for va〈11%. With increasing volume content the longitudinal and the transversal components of the remanent strain increase monotonously in similar way like the corresponding linear effective piezoelectric coefficients. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359164
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3747-3755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of coherently grown InP quantum dots embedded in Ga0.5In0.5P by conventional space charge spectroscopy methods is reported. Deep level transient spectroscopy (DLTS) is used to obtain quantitative information on the electron emission from the dots. The applied field is found to significantly enhance the electron emission rates as seen by shifts in the peaks towards lower temperatures with increased field. Taking the field induced barrier lowering into account, the emission energy for the one electron ground state of the dot is determined as 240±10 meV. The correlation between the measured signal and the observed electron accumulation in capacitance–voltage measurements is clearly demonstrated. Further, studies of the electron emission when the average electron population in the dots was varied show that the emission energies are modified by the coulomb charging energy. Admittance measurements as a function of temperature, bias and frequency were also performed, and the results are qualitatively explained in terms of response from the dots. These observations are consistent with the effect of the signal frequency on the measured carrier concentration profile. To complete the picture and in order to distinguish the DLTS signature of the dots from that of the deep levels in GaInP, electron traps in the barrier material were also characterized. Two main electron traps, one with an activation energy of about 950 meV and the other having an activation energy of 450 meV, were present in all the samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368553
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Recombination properties of structurally well defined NiSi2 precipitates in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 911-913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density NV and LD (approximately-equal-to) 0.7 × NV−1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104474
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of InP quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3016-3018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the application of deep level transient spectroscopy to the study of electron emission from quantum dots. The results are presented for coherently grown InP dots embedded in Ga0.5In0.5P. We determine an emission activation energy of 220 meV for the one electron ground state of the dots. With increased average electron occupation in the dots we observe a systematic shift of the DLTS peak towards lower temperatures. This we interpret as being due to Coulomb charging of the dots. We extract an average Coulomb charging energy of 8–12 meV per added electron in the dot in agreement with our estimated value of 9 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114937
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of the morphology of InP Stranski–Krastanow islands grown by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2981-2982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used transmission electron microscopy to determine the morphology of InP Stranski–Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at 580 °C. We investigated both capped and uncapped islands. It was found that the fully developed islands have the principal shape of truncated pyramids with a hexagonal base both before and after overgrowth. The planes defining the islands are of {001}, {110}, and {111} types. The base dimensions are 40–50 nm and 55–65 nm in the [1¯10] and [110] directions, respectively, and the height is 12–18 nm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114832
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Band filling at low optical power density in semiconductor dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied band filling in strained InP dots grown on GaInP. Compared to quantum wells, the dots show band filling at two orders of magnitude lower optical excitation power density. We show that the emission attributed to band filling originates from the dots by using spatially resolved photoluminescence recording emission from single dots with very high spectral resolution. With time-resolved photoluminescence spectra we follow the dynamic relaxation of the charge carriers in the dots. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114372
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...