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  • 1
    Electronic Resource
    Electronic Resource
    Aluminum gettering of cobalt in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4432-4433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the gettering effect of an evaporated aluminum layer on single crystalline and cast multicrystalline silicon doped with radioactive cobalt-57 by means of radiotracer methods and Mössbauer spectroscopy. We present evidence that aluminum gettering works at high temperatures and transfers the cobalt atoms from the Si bulk to the liquid Al-Si phase. Presumably Al gettering can be explained as a segregation induced process caused by a higher solubility of the metallic impurity in the liquid Al-Si phase compared with that in solid silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357339
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  • 2
    Electronic Resource
    Electronic Resource
    Recombination properties of structurally well defined NiSi2 precipitates in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 911-913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density NV and LD (approximately-equal-to) 0.7 × NV−1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104474
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  • 3
    Electronic Resource
    Electronic Resource
    Creation of p-n junction in Hg0.3Cd0.7Te (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used local plastic deformation and electron irradiation to create p-n junctions in Hg0.3Cd0.7Te. The electron induced current mode of scanning electron microscopy was used to detect the local conversion from p type to n type. Control experiments with CdTe and independent results show that the migration of interstitial mercury and its reaction with an acceptor must be responsible for the observed conversion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103801
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  • 4
    Electronic Resource
    Electronic Resource
    Model describing phosphorus diffusion gettering of transition elements in silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2207-2209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We give experimental evidence for cobalt in silicon that each of the processes defining phosphorus diffusion gettering (PDG), i.e., (1) P doping by in-diffusion and (2) SiO2 growth, achieves moderate gettering, while the cooperation of the two processes leads to strong gettering of cobalt. In a tentative model, gettering is attributed to the coupling between local currents of silicon self-interstitials, which are generated during PDG, and 3d impurities on substitutional sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102968
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  • 5
    Electronic Resource
    Electronic Resource
    Direct imaging of δ-doped layers in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 854-856 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct imaging of Be δ-doped layers in GaAs, in the concentration range (0.5–2)×1014/cm2, comparing samples grown by gas source molecular beam epitaxy (MBE) and conventional MBE. The gas source MBE δ layers are ∼15 A(ring) wide, and at least at high concentrations, consist of clusters ∼12 A(ring) in diameter. At 2×1014 Be atoms/cm2, the MBE δ layer is an order of magnitude wider than that grown at the same temperature by gas source MBE. Our results imply that layers with Be concentrations in excess of 1021/cm3 can be fabricated by gas source MBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103185
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion of manganese in silicon studied by deep-level transient spectroscopy and tracer measurements (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3590-3593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of manganese in silicon was studied in the temperature range 900–1200 °C by deep-level transient spectroscopy and the tracer method, with particular emphasis on well-defined boundary conditions. The surface concentrations from the tracer method agree with solubility data and the concentration of electrically active interstitial manganese is found to be 60–70% of the total manganese concentration. Both methods yield identical diffusion coefficients which are described by an Arrhenius law, D(T)=(6.9±2.2)×10−4 cm2 s−1 exp [(−0.63±0.03)eV/kT].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337042
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism of phosphorus diffusion gettering of cobalt in silicon studied by Mössbauer spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2519-2523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of cobalt in silicon during phosphorus diffusion under high surface concentrations (PDG) has been investigated by Mössbauer spectroscopy between 825 and 1000 °C. It has been found that cobalt, distributed uniformly in the specimen before PDG, is concentrated within a highly phosphorus doped Si-surface layer thinner than 0.5 μm after PDG. It is also shown that PDG suppresses surface gettering and that the residual cobalt concentration in the bulk can be lower than the cobalt solubility. Mössbauer spectra of this layer show that cobalt occurs as two species there. The first of these has nearly cubic symmetry and is transformed into the second species upon annealing at 600 °C. This species is stable under the conditions of PDG. Neither the formation of phosphorus-cobalt pairs nor the presence of CoSi2 can provide a comprehensive explanation of all experimental facts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335930
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  • 8
    Electronic Resource
    Electronic Resource
    Deformation induced deep levels in p-CdTe (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2703-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: α and β dislocations are separately investigated in p-CdTe by deep level transient spectroscopy. Two lines, whose amplitudes increase with increasing dislocation density are found. The defect concentration is found to be higher in case of β dislocations. One line, at Ev+0.44 eV, is Gaussian broadened, while the second, at Ev+0.35 eV, shows unusual capture characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109237
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetic measurements on the pyruvate kinase reaction in erythrocytes (1979)
    Springer
    Annals of hematology 38 (1979), S. 169-173 
    Details
    ISSN: 1432-0584
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01007962
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  • 10
    Electronic Resource
    Electronic Resource
    Clinical symptoms and biochemical properties of three new glucosephosphate isomerase variants (1986)
    Springer
    Annals of hematology 53 (1986), S. 21-28 
    Details
    ISSN: 1432-0584
    Keywords: Congenital nonspherocytic hemolytic anemia ; Erythrocyte enzyme deficiency ; Glucosephosphate isomerase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Glucosephosphate isomerase deficiency as the cause of macrocytic congenital nonspherocytic hemolytic anemia is described in three unrelated families. The biochemical properties of the variant glucosephosphate isomerases indicate that the patients have new variants, designated as GPI Kiel, GPI Hamburg, and GPI Homburg. The severity of the clinical symptoms depended on the amount of residual GPI activity and the biochemical properties of the variant enzyme. Thus the patient with GPI Kiel (34% residual activity) whose variant GPI was slightly unstable showed a mild chronic hemolytic anemia. The patient with GPI Homburg (7% residual activity) whose variant enzyme was stable and had a reduced specific activity, suffered from severe congenital hemolytic anemia and neuromuscular symptoms. Due to the special properties of GPI Homburg, we assume that both the hematological and neuromuscular symptoms of the patient with GPI Homburg are caused by his GPI deficiency. The twins with GPI Hamburg (27% residual activity) had a distinctly unstable variant enzyme and had suffered from hemolytic crises since birth. Only GPI Homburg showed an altered electrophoretic mobility and an increased affinity for fructose-6-phosphate. The other two variants had normal values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00320579
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