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  • 1
    Book
    Book
    Zechstein 1987 : international Symposium, Kassel/Hannover, [28. April to 9. May, 1987] (1991)
    Stuttgart : Schweizerbart
    Details Availability
    Keywords: Kongreß Konferenz ; Konferenzschrift
    Type of Medium: Book
    Pages: S. 807 - 1273 , Ill., graph. Darst
    Series Statement: Zentralblatt für Geologie und Paläontologie Jg. 1991, H. 4
    Language: German
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    GEOMAR CATALOGUE
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  • 2
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    Meteorological measurements in the upper air during Altair cruises, ERA-CLIM ID 0049
    PANGAEA
    Details
    Publication Date: 2023-05-12
    Keywords: Altair; ALTITUDE; CT; DATE/TIME; ERA-CLIM; ERA-CLIM_0049; European Reanalysis of Global Climate Observations; LATITUDE; LONGITUDE; Underway cruise track measurements; Wind direction; Wind speed
    Type: Dataset
    Format: text/tab-separated-values, 1837 data points
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    DATA PANGAEA
  • 3
    Electronic Resource
    Electronic Resource
    Subgap excitation of defect band photoluminescence in phosphorous doped hydrogenated amorphous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4587-4591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a study of the effect of temperature on the defect band photoluminescence (PL) of moderately phosphorous doped amorphous silicon thin films deposited by magnetron sputtering. We have identified two types of recombination processes responsible for the observed temperature dependence of the defect PL band produced by subgap excitation. One of the processes is similar to that observed in intrinsic hydrogenated amorphous silicon and may originate from the recombination of carriers at band tail states and dangling bonds. The donor-defect pairs at nearest neighbor sites may be responsible for the second recombination process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363441
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Density of glow discharge amorphous silicon films determined by spectroscopic ellipsometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4894-4896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric function of thin-film hydrogenated amorphous silicon (a-Si:H) grown on fused silica at different substrate temperatures has been investigated by spectroscopic ellipsometry. An improved interpretation of the ellipsometric data is based on a tetrahedron model that takes into account the influence of hydrogen incorporation in the amorphous network. It is shown that the film density can be derived from an accurate data interpretation, whereas the maximum value of the imaginary part of the dielectric function ε2max and the void volume fraction are not proportional to the density of a-Si:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357267
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  • 5
    Electronic Resource
    Electronic Resource
    Optimization of process parameters for the deposition of improved a-Ge:H by dc magnetron sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2864-2875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the influence of hydrogen and argon partial pressures, substrate temperature, and dc power on the composition and the optoelectronic properties of hydrogenated amorphous germanium (a-Ge:H) is presented. The sputtered a-Ge:H has a typical Ge density of 4×1022 atoms/cm3 and contains up to 4×1021 H atoms/cm3. It is chemically stable and shows no sign of postoxidation in the IR spectra over a period of one year. A low midgap absorption according to α(hν=0.6 eV)〈10 cm−1 and Urbach energy E0〈50 meV is observed for the best films which are prepared at the lowest argon pressure p(Ar)=0.5 mTorr and a dc power of Pdc〈100 W, i.e., a growth rate of 1 μm/h or less. The ratio of photo- to dark conductivity reaches a maximum value of σph/σD=0.3 for σD=10−4 (Ω cm)−1 and correspondingly a normalized photoconductivity of ημτ=10−5 cm2/V is achieved. The increased dark conductivity of the a-Ge:H films is explained in terms of an unintentional n-type doping effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356180
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  • 6
    Electronic Resource
    Electronic Resource
    Light scattering and enhanced optical absorption in hot wire microcrystalline silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3416-3418 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is attempted to clarify the origin of the enhanced optical absorption in hot wire microcrystalline silicon (hw-μc-Si:H) which is not yet fully understood. We investigated the influence of elastic light scattering on the enhanced optical absorption of hw-μc-Si:H by means of an Ulbricht sphere and angular resolved scattering measurements, respectively. The experiments clearly revealed that elastic light scattering is not mainly responsible for the enhanced optical absorption in hw-μc-Si:H compared to that in monocrystalline material. They confirm the absorption enhancement to be a bulk effect which is determined by the structural properties of the material and the hydrogen incorporation into the samples. With regard to the origin of the absorption enhancement we refer to an absorption model for hw-μc-Si:H being briefly outlined. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368501
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of epitaxial germanium films on silicon using hot-wire chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3457-3459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the epitaxial growth of germanium (Ge) films from germane gas at low substrate temperature of 350 °C and deposition rates up to 3 Å/s on crystalline silicon (Si) using hot-wire chemical vapor deposition. In situ kinetic ellipsometry measurements reveal that deposition rate is very critical to obtain thick epitaxial films. Cross-sectional transmission electron microscopy and spectroscopic ellipsometry measurements yield growth of epitaxial Ge layer with 98% crystalline fraction. Epitaxy was also confirmed by x-ray diffraction measurements and lattice stress in the epilayer is estimated. Raman measurements also reflect growth of crystalline Ge films without Si impurities. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371789
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of laminar crystalline silicon on CaF2 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1289-1291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si heteroepitaxy on CaF2 was studied with x-ray photoelectron spectroscopy and diffraction and low-energy electron diffraction to determine the interface bonding and silicon overlayer growth mode. The CaF2 surface was prepared by irradiation with low-energy electrons and exposure to arsenic, which replaced surface fluorine atoms with arsenic. Thin Si films (1.3 nm) were subsequently deposited at 550 °C. The Si films completely cover the CaF2 substrate and have a type-B orientation. The resultant interface has Si–Ca bonds, with the As surfactant layer terminating the Si surface in a 1×1 structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290158
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1284-1286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon-germanium (a-SiGe:H) films were produced by the "thermocatalytic chemical vapor deposition" [(TC-CVD) also called "hot-wire" CVD] method. With respect to proposed superstrate solar cell application of the material, the substrate temperature was kept around 200 °C. The band gap Eg of the films could be varied between 1.1 and 1.77 eV by changing the ratio of silane to germane flow. The photoelectronical properties of the alloy films have been found sufficient for solar cell application when Eg≥1.5 eV and deteriorate for further reduction of the band gap. Using the concept of band gap grading, p-i-n solar cells containing a TC-CVD-a-SiGe:H i layer with initial conversion efficiencies up to η=6.42% (Eg=1.5 eV) have been fabricated. The influence of moderate hydrogen dilution of the process gas on the conversion efficiency and stability of the solar cells has also been investigated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123525
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of silicon on the properties of reactively sputtered hydrogenated amorphous germanium (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 566-568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous germanium-silicon films (a-Ge1−xSix:H, 10−3〈x〈10−1) were prepared by reactive dc-magnetron sputtering from a germanium target in an Ar/H2/SiH4 atmosphere. Silicon incorporation leads to a decrease of the dark conductivity σD (mainly independent of the hydrogen pressure) and a weaker decrease of the photoconductivity σph (strongly dependent on the hydrogen pressure) and has no influence on the gap state density detected by photothermal deflection spectroscopy. The best photoconductivity corresponding to μτ=10−5 cm2/V was obtained under the highest hydrogen pressure and is not influenced by silicon up to x=0.01. The ratio of σph/σD under monochromatic excitation (632 nm, 9 mW/cm2) increases from 0.25 in a-Ge:H to more than 1 in a-Ge0.99Si0.01:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107838
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