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  • 1
    Keywords: Forschungsbericht
    Type of Medium: Online Resource
    Pages: Online-Ressource (78 p., 8,57 Mb.) , ill.,graphs
    Edition: [Elektronische Ressource]
    Language: German
    Note: Differences between the printed and electronic version of the document are possible. - Contract BMBF 03C0294C/8. - nIndex p. 9 - 12 , Also available as printed version , Systemvoraussetzungen: Acrobat reader.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3038-3040 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy loss in multifilamentary superconducting tapes has been measured for various orientations of the external ac magnetic field. When the ac loss in parallel and perpendicular fields is known, the loss at intermediate field angles can be predicted over a wide range of field amplitudes. The prediction is based upon the following assumptions: For low-field amplitudes, the current patterns that would be induced in the tape by the parallel and perpendicular field components can be summed. For high-field amplitudes, the tape only carries the current pattern induced by the perpendicular field component. These assumptions are supported by theory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1655-1656 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using an amorphous overlayer of arsenic, it is shown that a GaAs(100) wafer, with a layer of GaAs grown on it by molecular-beam epitaxy, can be satisfactorily transferred in the laboratory atmosphere from one ultrahigh vacuum chamber to another. The clean GaAs(100) surface is retrieved in the second chamber by low-temperature (350 °C) evaporation of the arsenic overlayer. An epitaxial layer of CaF2 was grown successfully on a smooth GaAs surface retrieved in this manner. This technique offers an opportunity to investigate GaAs/epifluoride/GaAs structures by transferring samples between the GaAs growth chamber and the fluoride growth chamber without subjecting them to a higher temperature (600 °C) cleaning process.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 273-275 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first epitaxial growth of lanthanum trifluoride on the (111) surface of gallium arsenide. Smooth, crack-free, and high-crystalline quality films of thickness up to 200 nm were grown at 500 °C on a GaAs(111) surface that was cleaned by ion heat treatment and post-anneal. The film surfaces were examined in situ by low-energy electron diffraction (LEED) and ex situ by reflection high-energy electron diffraction (RHEED) and Nomarski optical microscopy. Capacitance-voltage (C-V) and current-voltage (I-V) measurements showed a breakdown strength of 2×106 V/cm and no significant flat-band shift due to insulator charges.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4282-4291 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage produced in single-crystal silicon by two distinctly different dry etching techniques, Ar ion beam etching and CCl4 reactive ion etching is characterized and compared using spectroscopic ellipsometry, reflected high- energy electron diffraction, and current-voltage (I-V) characteristics of Au contacts to the etched Si. Secondary ion mass spectroscopy is also used to further characterize the CCl4 exposed samples. The effectiveness of low-energy hydrogen ion implants in passivating this dry etching induced damage is explored. The restoration of I-V characteristics caused by H+ implants is correlated with the evolution of the spectroscopic ellipsometry, reflected high- energy electron diffraction, and secondary ion mass spectroscopy data.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The early state of spinodal decomposition was studied by small angle neutron scattering in the critical mixture of the isotopic blend deutero-polystyrene/polystyrene (d-PS/PS) of equal molecular volume of 1.42×106 cm3/mol in a temperature range 12 K≤||Tc−T||≤82 K. This process can be described by the relaxation between two static structure factors, S(Q) representing the equilibrium values of the system in the mixed state and at the temperature where phase separation occurs. The time evolution of the relaxation process is described by the dynamical structure factor, L(Q,t) which depends on the dynamic properties of the mixture. It will be shown that the static structure factor of a mixed system can also be determined in the unstable two-phase region during the early state of spinodal decomposition. Consistent values for the Flory–Huggins parameter were found in comparison with a lower molecular d-PS/PS sample and, therefore, a lower critical temperature which was even smaller than the phase separation temperatures of the present system.The observed time evolution of the fluctuation modes is nonexponential. Therefore, it was originally supposed that internal modes of the coil come into play. The analysis of the data with an ansatz by Akcasu, which takes internal modes into account showed, however, that the phase separation in the experimental range of wave number and time is dominated by the centre of mass diffusion as in the C–H–C case and the nonexponential behavior was attributed to a time dependent increase of the "range'' of the Onsager coefficient. A range of the Onsager coefficient larger than the radius of gyration of a single coil is predicted in case of entangled polymers. However, no time dependence was predicted so far. The evaluated diffusion constants follow an Arrhenius behavior and are consistent with earlier studies. They show a D0∝N−2 scaling consistent with reptation. A further result is the observation of a second order peak in the structure factor already in the early times of spinodal decomposition. So far, this was only attributed to the late state of spinodal decomposition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Polymer bulletin 18 (1987), S. 343-346 
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary A polymer chain subject to certain constraints (slip-link plus fixed end points) is considered. It is shown that this system exhibits spontaneous symmetry breaking when the end-to-end distance of the chain is lowered below a certain critical value. Various implications of this effect are mentioned.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Polymer bulletin 30 (1993), S. 617-620 
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary The conformational behaviour of a macromolecule is described by a random walk of fixed contour length which consists of n straight segments, where n=1,2, .... Two cases are discussed: (i) the segments are of equal length; (ii) the points where the random walk changes its direction are randomly distributed along the contour. Analytical expressions for the mean squared end-to-end distance R and for the radius of gyration R g are presented. When deriving R g it is assumed that the mass of the chain is distributed uniformly along the contour.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract To reduce fabrication costs of fibre-optic terminal modules for interactive services, an InGaAsP/InP chip fabrication process has been developed for monolithic integration of a strained-layer multiple quantum well laser, a monitor diode and a photoreceiver with a 1300/1530nm filter. Reception responsivity and output power of the chips are 0.1 AW-1 at 1300nm wavelength and 4.5mW at 1530nm wavelength, respectively. At present, complete modules with fibre pigtail exhibit 0.7mW launch power, but 1.4 mW is expected with the latest chips.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Geometriae dedicata 48 (1993), S. 211-230 
    ISSN: 1572-9168
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract We study some geometric properties of a generic surface of revolution in ℝ3, like its order of contact with lines and its projection onto planes. The projections of generic surfaces of revolution from any centre of projection are classified up to diffeomorphisms of the apparent contour.
    Type of Medium: Electronic Resource
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