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Note: Förderkennzeichen BMBF 01LY1211A-B - 01LY1211D-F. - Verbund-Nummer 01136965 , Paralleltitel dem englischen Berichtsblatt entnommen , Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Sprache der Zusammenfassung: Deutsch, Englisch

Note: Förderkennzeichen BMBF 01MT 404. - Verbund-Nr. 01031308. - Engl. Titel: Final report for the joint project: Technologies and systems for digital cinema, sub projects: Project management and introduction scenarios , Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Auch als gedr. Ausg. vorhanden , Systemvoraussetzungen: Acrobat reader.

Note: Förderkennzeichen BMWi 01MT08007. - Verbund-Nr. 01062795. - Engl. Zsfassung u.d.T.: Final report for the joint project: PRIME - production and projection technologies for immersive media, sub project: intoduction scenarios , Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Auch als gedr. Ausg. vorhanden , Systemvoraussetzungen: Acrobat reader.

Note: Intro -- Gettering and Defect Engineering in Semiconductor Technology -- Table of Contents -- ULSI Technology - a Complex Device Manufacturing Process -- Semiconductor Isotope Engineering -- Crystalline Silicon for Solar Cells -- Light-Emitting Porous Silicon: A Defective Quantum Sponge Structure? -- Semiconducting Silicide-Silicon Heterostructures -- What Local-Density Calculations Can Teach about Semiconductor Surfaces, Interfaces and Defects -- Mechanisms of Transition Metal Gettering in Silicon -- Gettering in Silicon under Vacancy Generation Conditions -- Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers -- Defect Engineering in Erbium-Doped Silicon Structure Technology -- PN Junction Formation by Two Steps Annealing -- Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions -- Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile -- On the Interaction of Transition Metals with Silicon Grain Boundaries -- Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma -- Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE -- Misfit Strain Engineering in Heteroepitaxial Structures -- Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures -- Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract) -- Properties of Hydrogen, Oxygen and Carbon in Si -- Solubility of Hydrogen in Silicon at High Temperatures -- Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C -- Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature. , Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content -- New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon -- Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface -- The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD -- Annealing Properties of N-Doped Cz-Si Crystals -- Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study -- Formation and Properties of Tetranuclear Clusters of Manganese in Silicon -- EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon -- Investigation of Deep Levels and Carrier Dynamics in SiC Films -- Process-Induced Defects in Silicon Technology -- Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics -- Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide -- Dopant Migration Caused by Point Defect Gradients -- Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory -- Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon -- Electric-Dipole Spin Resonance on Extended Defects in Silicon -- Luminescence of Dislocations in SiGe/Si Structures -- On the Nature of Dislocation Luminescence in Si and Ge -- Defect Electrical Activity Study Using a Si(Ge) Heteroepitaxial Structure -- Properties of Dislocations and Point Defects in Fz-Si -- Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures -- Experimental Study of Anomalous Dislocation Kinks Drift in Germanium Single Crystals -- Cu Precipitation in Strained and Relaxing GexSi1-x Heteroepitaxial Layers -- Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures. , The Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD Device -- Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon -- UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology -- Formation of High Quality SiGe/Si Heterostructures -- Liquid Phase Epitaxy of SiGe Structures -- Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio -- Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers -- Deposition and P Doping of Si(1-x)Gex Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System -- Misfit Dislocations in Strained Layer Epitaxy -- Stress Relaxation Mechanisms by Dislocations in the System Ge on Si -- Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems -- Relaxation Phenomena in Strained Si1-xGex Layers on Planar and Differently Patterned Si Substrates -- Equilibrium Configuration of Misfit Dislocations in Graded Buffers -- Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon -- Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices -- Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures -- Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm) -- Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures -- Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments -- Application of Electron Microscopy to Semiconductor Materials Research -- X-Ray Analysis of Strained Layer Configurations. , In Situ X-Ray Investigation of Relaxation Processes in Si1-xGex Layers on Silicon Substrate -- Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures -- Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction -- New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures -- Detection of Threading Dislocations by EBIC in a SiGe Epilayer with Graded Buffer -- HREM and DLTS of Σ37(610) and Σ29(520 )[001] Tilt Grain Boundaries in Ge Bicrystals -- TEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi System -- Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si1-xGex-Heterostructures -- Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices -- Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si -- Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes -- Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements -- Investigation of Recombination Properties of Ti Double Donor in Si -- Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems -- The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations -- Author Index.

Note: Intro -- Gettering and Defect Engineering in Semiconductor Technology VII -- Preface -- Table of Contents -- Design: New Material Challenge for Silicon ULSI -- Silicon Wafer Technology: The Challenges towards the Gigabit Era -- Hydrogen Annealed Silicon Wafer -- Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal -- CZ Crystal Growth Development in Super Silicon Crystal Project -- Gettering by Voids in Silicon: A Comparison with other Techniques -- Gettering in Advanced Low Temperature Processes -- Metal Gettering by Defective Regions in Carbon-Implanted Silicon -- Metallic Impurity Gettering in MeV Implanted Si -- Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon -- A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers -- Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon -- Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis -- Interaction of Impurities and Dislocations in Silicon before and after External Gettering -- The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers -- Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers -- Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si -- Vacancy-Assisted Oxygen Precipitation Phenomena in Si -- Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers -- State of Oxygen and Growth Conditions -- Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV) -- Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements. , Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection -- Initial Stage of Oxygen Precipitation in Silicon -- Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon -- Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres -- Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium -- Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation -- Erbium in Silicon: Problems and Challenges -- Thermal Donors in Silicon Doped with Erbium -- Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons -- Defect Engineering Radiation Tolerant Silicon Detectors -- Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors -- Lattice Defects in Si1-xGex Devices by Proton Irradiation and their Effect on Device Performance -- An IR Study of the Annealing Behaviour of A-Center in Silicon -- Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes -- Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er -- Alpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon Transistor -- The Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray Irradiation -- Critical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAM -- Modification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat Treatments -- Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi2-Precipitates in Silicon. , The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si -- Influence of the Surface Metal Spraying on the Dislocation Detachment Process in Silicon Crystals -- The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations -- Deformation Interaction of Defects in Crystal: Concept of Evaluation -- Yield Analysis of CMOS Ics -- The Role of Grown-in Defects in Advanced Silicon Technology -- Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models -- Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen -- Strain and Gettering in Epitaxial Silicon Wafers -- Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements -- Defects Produced in Silicon by Reactive Ion Etching -- Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon -- Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si -- Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers -- Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon -- Planar Solidification of Multicrystalline Silicon for Phtovoltaic Applications -- Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing -- Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals -- On the Defect Structures in Te-Doped GaAs -- Study of Surface Conduction Related Effects in GaAs MESFET's -- Nitridation Effects in n-CdTe -- Formation of Grown-in Defects in CZ-Si Crystals -- X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon. , Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution -- Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model) -- Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes -- An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry -- Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si -- Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures -- Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films -- Raman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass Substrates -- A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries -- New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA) -- Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions -- Keyword Index -- Author Index.

Note: Intro -- Gettering and Defect Engineering in Semiconductor Technology VI -- Table of Contents -- Trends and Challenges for Advanced Silicon Technologies -- Needs of Low Thermal Budget Processing in SiGe Technology -- History and Future of Semiconductor Wafer Bonding -- Building the Electron Superhighway: Back-End Processing and Simulation -- Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon -- Silicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit Era -- Expected Limits for Manufacturing Very Large Silicon Wafers -- Diameter Effects on Grown-In Defects in CZ Crystal Growth -- Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices -- Multicrystalline Silicon for Solar Cells -- Room Temperature UHV Silicon Direct Bonding -- External Gettering for Multicrystalline Silicon Wafers -- Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications -- Gettering of Au in Heat Treated Si/SiGe/Si Structures -- Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers -- Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing -- Interactions between Dopants and End-of-Range Defects in Silicon -- Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation -- SiC Buried Layer Formation Induced by Ion Implantation -- The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources -- Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation -- Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments -- Point Defects in Semiconductors - Then and Now. , Oxygen Aggregation Phenomena in Silicon -- New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics -- Hydrogen Passivation of Double Donors in Silicon -- Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si -- New Infrared Bands in Neutron-Irradiated Si -- Iron Group Impurities in Semiconducting Iron Disilicide -- Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study -- Influence of Point Defects on Defect Formation in Si:Er -- The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center -- Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures -- DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities -- DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing -- Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation -- Structural and Electrical Properties of NiSi2 Particles in Silicon -- Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation -- Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon -- A Study of Defects Generated by BF2+ Implantation in Silicon Crystals and Their Annealing -- Surface Damage Induced by Reactive Ion Etching in n- Type Silicon -- The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts -- The Impact of Fe and Cu Contamination in the 1012 at/cm2 Range on the Performance of Junction Diodes. , Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices -- Correlation between Dislocations and Electron Transport Properties in Si/SiGe -- Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon -- Investigation of the Dislocation Motion in the Bulk SiGe Crystals -- Ion Beam Sputter Deposited Si0.8Ge0.2Epilayers: Lattice Defects and Surface Topology -- GaAIAs Lattice Parameter Dependence on Free Electron Concentration -- Relation between Structural and Carrier Recombination Properties in As-Rich GaAs -- Investigation of Microdefects in Multicrystalline Silicon for Photovoltaic Applications -- Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots -- Band Structure Engineering in Si-Ge Structures -- Diffusion Effects and Luminescence in Thin SiGe/Si Layers -- Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD -- The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures -- Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys -- Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas -- Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion -- The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure -- Critical Points of Strained Si1-yCy Layers on Si(001) -- Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD -- Elastic Relaxation of Pseudomorphic Strain in Quantum Dots -- Electrical Activity of Misfit Dislocations in GaAsSb/GaAs Heterojunctions -- Twin Formation during Epitaxial Growth of InP on Si. , Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates -- Determination of Interface Structure and Bonding by Z-Contrast STEM -- Tomographic Atom Probe: A New Tool for Nanoscale Characterisation -- PHOTO-EDSR in Plastically Deformed p-Si -- Cyclotron Resonance in Heavily Doped Silicon Quantum Wells -- TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si1-xGex Layers Grown with Molecular Beam Epitaxy -- Measurements of Diffusion Length in Si-SiGe Structures -- Determination of Subgap-Asorption in μc-Si:H Films by CPM -- An Analysis of Residual Strain in Dry Etched Semiconductor Nanostructures -- Author Index.

Note: Literaturverzeichnis: Seite 15-20 , Förderkennzeichen BMBF 03ZZ0210B , Verbundnummer 01176254