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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5177-5179 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure burst tests gave measured tensile strengths between 230 and 410 MPa for a total of six chemical-vapor-deposited (CVD) diamond disks in both transparent "white'' and opaque "black'' forms obtained from three different sources. The disks were nominally 0.635 cm in diameter and 254 μm thick. These strengths are explained by a theoretical model using a Young's modulus of 1.05×106 MPa and a fracture surface energy of 5.3 J/m2, appropriate for natural diamond, and with critical crack lengths between 33 and 105 μm. The latter lengths can fit, either on or inside, the tapered columnar crystal grains that grow vertically in synthetic CVD diamond films. The model is consistent with the observed inverse dependence of measured tensile strength on film thickness and with tensile strengths between 180 and 5190 MPa reported by other workers for synthetic CVD diamond. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3212-3218 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TiSi2 was deposited onto both Si and SiO2 substrates by low-pressure chemical vapor deposition. By using both TiCl4 and SiH4 as source gases, the reaction could be controlled to yield either selective TiSi2 on Si substrates only, or blanket silicide films. Experimental conditions providing for selective deposition were investigated. Mass spectroscopy data and thermodynamic calculations were in good agreement with each other and provided rational explanations of observed phenomena. Reaction of TiCl4 vapor with Si yields TiSi2, but is accompanied by excessive Si consumption. This etching reaction may be moderated by increasing the reactor pressure while keeping the substrate temperature around 900 K, and by the introduction of H2 and/or SiH4 into the reactant gas mixture.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1444-1446 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique was developed to grow high-purity polycrystalline diamond films at 850 °C and 50 mTorr with 10% CH4, 2% O2, and balance H2 using a filament-assisted chemical vapor deposition technique in combination with an electron cyclotron resonance (ECR) plasma. Using Raman spectroscopy and in situ plasma diagnostics, we have shown that the hydrogen plasma selectively etched nondiamond components during deposition. Experiments with ECR plasma and the filament-assisted technique from 10−6 Torr to 50 mTorr and 500–1000 °C indicated that low-energy electrons are a key factor in growth of diamond thin films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1641-1643 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to measure phonon linewidths and frequencies of a number of high quality diamond crystals. It was found that the defect induced broadening produced a Lorentzian line shape. The smallest Lorentzian linewidth of 1.68 cm−1 at 300 K caused by anharmonicity and defects was obtained for the high pressure synthesized diamond. The linewidths of the diamonds grown by chemical vapor deposition varied, with the best sample having a linewidth of 2.31 cm−1, close to the values for natural diamonds. No measurable phonon frequency shift caused by defects was found.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 16 (1977), S. 2558-2561 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Histopathology 15 (1989), S. 0 
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A quality assurance scheme for immunocytochemistry was started in 1984. There are currently 140 participating laboratories, most of which have shown considerable improvement in their results since joining the scheme. In our experience the supplier of the primary antibody does not affect the quality of the results; the sensitivity of the method used and the experience of the staff carrying out the technique are the most important factors. Participation in a scheme such as this enables laboratories to have their results compared with others and to share problems.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Histopathology 2 (1978), S. 0 
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A reliable, reproducible combined stain for elastin and acid mucopolysaccharides has been developed and is particularly suitable for the study of large blood vessels as muscle and collagen are also stained. The technique is described.
    Type of Medium: Electronic Resource
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