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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3365-3371 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy carried out on bulk samples of Er:As2S3 glasses demonstrate that Er3+ is incorporated in optically active sites in the glass and gives rise to a broad ∼1500–1600 nm, 4I13/2→4I15/2 emission spectrum similar to those observed in Er-doped oxide glasses. In addition to the expected 980 nm (4I15/2→4I11/2) Er3+ PLE band, the 1500–1600 nm Er3+ PL band in the glass exhibits a remarkably broad PLE spectrum which extends from the As2S3 Urbach absorption edge at ∼550 nm to beyond 1000 nm. This broad PLE band corresponds closely to an exponential PLE band observed in the "band tail'' spectral range for Er-doped Ge33As12Se55 glasses. These unusual PLE spectra indicate that in Er-doped chalcogenide glasses there is an additional broad-band, below gap, extrinsic absorption mechanism which efficiently excites the characteristic 1550 nm, 4I13/2→4I15/2 Er3+ emission band. It is not possible to determine at present whether the Er dopants themselves are responsible for the broad band absorption which excites the Er3+ PL bands, or if photoexcited carriers attributable to absorption by other impurities transfer their energy to the excited states of the Er3+ 4f shells. Microscopic characterization techniques reveal that the Er2S3-doped glasses also contain residual Er2S3 crystallites which give rise to sharp, narrow line 1550, 980, and 810 nm Er3+ optical spectra characteristic of polycrystalline Er2S3. The temperature dependence of the Er2S3 PL and PLE spectra enables the energy levels of the 4I13/2 excited state and 4I15/2 ground state manifolds to be determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2687-2690 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4609-4614 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the luminescence properties of GaN layers grown by metalorganic chemical vapor deposition on sapphire substrates with GaN/AlN double buffer layers or GaN single buffer layers was carried out with photoluminescence and cathodoluminescence (CL) spectroscopy. It was discovered that the use of the double buffer layer resulted in an improved surface morphology, but also increased the strain in the samples relative to samples grown on single GaN buffer layers. Free exciton (A exciton), neutral donor-bound exciton, and acceptor-bound exciton photoluminescence peaks were observed for GaN films grown on GaN, AlN, and GaN/AlN buffer layers. Acceptor free-to-bound luminescence was also observed and the thermal activation energy of the acceptors was measured. From these data we are able to determine the acceptor binding energy, EA, to be 231.5 meV and the donor binding energy ED to be 29.5 meV. An exciton peak, the acceptor free-to-bound luminescence, and an unidentified lower energy peak were observed with CL. CL imaging also allowed us to correlate luminescence with surface features of the films. e-beam annealing of both n-type and p-type films was investigated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1990-1992 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the MOCVD grown GaN:As films. The arsenic incorporation efficiency as a function of experimental conditions and structure is presented. Temperature- and power-dependent cathodoluminescence measurements have been performed to help establish the nature of the As-related peak. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 231-233 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the 1540 nm 4I13/2→4I15/2 emission of Er3+ in Er-implanted films of GaN grown by metalorganic chemical vapor deposition. The PLE spectra exhibit several broad below-gap absorption bands, which excite three distinct site-selective Er3+ PL spectra. The excitation of two of the site-selective Er PL bands involves optical absorption by defects or background impurities, rather than direct intra-f shell absorption, with subsequent nonradiative transfer of the energy to nearby Er3+ luminescence centers. The characteristics of the PLE spectrum of the third site-selective PL band suggest that an exciton bound at an Er-related trap is involved in the excitation mechanism. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 670-672 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy carried out on bulk samples of Er2S3-doped Ge33As12Se55 glasses demonstrate that Er3+ is incorporated in optically active sites in the glass and gives rise to a broad ∼1500–1600 nm 4I13/2→4I15/2 PL spectrum similar to those observed in Er-doped oxide glasses. The novel PLE spectrum of the 1550 nm Er3+PL band comprises a superposition of relatively sharp peaks which are attributable to the characteristic 4I15/2→4I11/2 and 4I15/2→4I9/2 Er3+ absorption transitions at 810 and 980 nm, respectively, and a broad, below-gap PLE band characteristic of the weak defect or impurity absorption tails in chalcogenide glasses which decrease exponentially with decreasing photon energy. At high energy the exponentially rising Urbach absorption edge, which leads to competing nonradiative decay mechanisms, imposes an exponentially decreasing slope on the PLE spectrum. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2636-2638 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent photoluminescence excitation (PLE) spectroscopy has been carried out on the yellow band (YB) in GaN. The 5 K PLE spectra demonstrate that the exciting light must have photon energy large enough to generate free carriers or carriers localized on shallow impurities in order to excite the YB effectively. With increasing temperatures, progressively deeper energy levels can be thermally ionized, enabling extrinsic absorption by these deeper levels to generate the free holes required to excite the YB emission. The broad below-band gap PLE response then exhibits thermally activated onsets attributed to these free-to-bound transitions. One such onset corresponds to the well-known 205 meV acceptor, and a second onset provides conclusive evidence for the existence of a previously unconfirmed ∼120 meV impurity or defect level in GaN. © 1998 American Institute of Physics.
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