Publication Date:
2016-05-28
Description:
The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a -plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 10 8 , and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (V ds ), the drain current (I d ) and transconductance (g m ) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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