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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4948-4950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently the synthesis of a new high intrinsic coercive force, iHc=38.5 kOe at 293 K, Sm-Fe-Ti phase in film form was reported. Films with Al additions have now been made, and the preparation conditions are better defined. The addition of 2.3–4.5 at. % Al helped to sharpen the x-ray patterns of the high iHc samples. The iHc values for Al concentrations less than 4 at. % did not fall below 30 kOe for proper preparation conditions. The nominal composition for the high iHc phase samples spanned from 17 to 22 at. % Sm, and Ti/Fe ratios from 0.09 to 0.14 when related to Sm-Ti-Fe. The high iHc samples are reported to be composed of two Ti-substituted phases. The high iHc phase is found to be a SmCo5-related hexagonal structure with a nominal formula of Sm7(Fe,Ti)30. The Ti addition allows Ti to form dumbbell pairs in replacing Sm atoms. The semihard phase component is reported as a cubic Sm(Fe,Ti)2 phase. The iHc values were most sensitive to the Ti/(Ti+Fe) atomic ratio and rose at the rate of +6 kOe/%[Ti/(Ti+Fe)] as the nominal composition of 19 at. % Sm was approached and starts to decrease for higher ratios. Initial magnetization studies have been used to show the influence of the magnetic field that was applied during sputter depositions and crystallization.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4614-4615 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation has been used to nitride highly aligned ThMn12-type structure Nd(Fe,Co,Mo)12 film samples. The initial 1–12-type films were made by sputtering with the crystallite c axes aligned perpendicular to the film plane. The films were then nitrided to produce fully nitrided 1–12 films, but only for a limited range of N ion doses. Much of the 1–12 phase was made amorphous before full nitriding was observed. It was not possible to thermally anneal the N implanted samples to lower the α-Fe concentration resulting from the N ion bombardment. This is only consistent with the Nd(Fe,Co,Mo)12N phase being metastable. Low temperature heat treatments of the N implanted films at temperatures less than 270 °C produced evidence for Fe16N2 formation, but little restoration of the 1–12 phase. For heat treatments at temperatures of 270 °C and above no evidence of Fe16N2 was detected. These results indicate that it is not possible to produce nitrided ThMn12 films with Fe16N2 inclusions by ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5961-5963 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In applications where large remanent moments and energy products are required at elevated temperatures, SmCo-based permanent magnets provide the best properties. In addition to their high Curie points, these SmCo-based ordered phases of 1-5, 2-17, and the disordered 1-7 phase show large uniaxial anisotropies at elevated temperatures. We have now measured the high-temperature hysteresis properties of single-phase TbCu7-type SmCo-based permanent magnet films. Such single-phase samples have the advantage that optimal magnetic properties can be obtained from the as-sputtered films without any subsequent heat treatments. Normally bulk samples in this composition range form the two phase cellular structure whose magnetic properties are very sensitive to heat treatments. Single-phase TbCu7-type films of composition Sm13Co58Fe20Cu7Zr2 were sputter synthesized such that the crystallite c axes were oriented in the film plane. The net anisotropy field of the films remained larger than the maximum applied field of 18 kOe even at the highest measurement temperature of 460 °C. Thus all measurements were from minor hysteresis loops. The in-plane coercivity showed a monotonic decrease from 6.0 kOe at room temperature to 1.3 kOe at 460 °C. The in-plane remanent flux density decreased from 8.5 kG at 50 °C to 5.8 kG at 460 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly smooth and particulate free relatively thick polycrystalline La0.7Sr0.3MnO3 films out to 6 μm thick have been grown by shadowed pulse laser deposition at 30 Hz (248 nm, 500 mJ). Such films exhibited a low field and high field magnetoresistance as previously reported by a number of groups. Multilayer films made with alternating 8-nm-thick barium ferrite and 16-nm-thick La0.7Sr0.3MnO3 laminations exhibited the same high field response, but did not exhibit the low field magnetoresistance component. This is consistent with the low field component arising from intergrain scattering. Patterned films have been simultaneously deposited onto R-plane, C-plane, and polycrystalline alumina substrates. The films were postannealed at 750 K in 200 Torr O2 for 45 min. The low field magnetoresistance was most pronounced for the single layer films made onto C-plane sapphire and then polycrystalline alumina substrates. The films exhibited a broad maximum in resistivity versus temperature at 162, 210, and 218 K for films grown onto R-plane sapphire, C-plane sapphire, and alumina substrates, respectively. Restricted grain size films made with La0.7Sr0.3MnO3 and barium ferrite laminations exhibited a single linear magnetoresistance response of −0.43%/kOe for in plane applied fields of ±10 kOe. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6247-6249 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of SmCo based materials exhibiting high intrinsic coercivities and smooth hysteresis loops have been prepared by pulsed laser deposition (PLD) onto moderately heated substrates. Films directly crystallized from SmCo5 targets onto 375 °C substrates exhibited a maximum iHc=11.3 kOe at a pulse repetition rate of 10 Hz with lower coercivities for both lower and higher pulse repetition rates. In the present case the films were deposited onto polycrystalline substrates. The films exhibited a very small grain size of less than 1 μm diameter, were mirrorlike, and shadow deposited films were relatively particulate free under scanning electron microscope examination. Shadowed PLD deposition was used for the best films. Laser wavelengths of 193 and 248 nm were used with pulse repetition rates from 5 to 50 Hz. Films grown without shadowing exhibited a great deal of particulate contamination. The hysteresis loops of such nonshadowed films were constricted and exhibited drops in the 4πM values upon demagnetization. To our knowledge this is the first reporting of high coercive force SmCo based films deposited by PLD exhibiting single phase type hysteresis loops. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Hyperfine interactions 69 (1992), S. 585-588 
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The rapidly queoching samples of Sm20Fe70Ti10 were prepared by melt spinning. The coercivities of crystallized ribbons were found to vary with the spinning velocity. The value of coercivity obtained was 3.2kOe, which is higher than that reached in Sm−Fe−Ti alloys with the ThMn17 structure. The results of Mössbauer effect and X ray diffraction analyses indicate that the alloy consists of SmFe2, SmFe3, an undetermined paramagnetic phase and the minor phase of Sm2Fe17.
    Type of Medium: Electronic Resource
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