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  • 1
    Electronic Resource
    Electronic Resource
    Be incorporation and surface morphologies in homoepitaxial InP films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1122-1124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the mechanism of Be incorporation in InP homoepitaxial films grown by metalorganic molecular beam epitaxy. The actual Be concentration in the films reaches 1–2×1019 cm−3 while the hole concentration saturates at a lower value (large-closed-square)∼2×1018 cm−3 in our case). The measured lattice mismatch between film and substrate depends both on growth temperature and Be flux. The resulting changes in morphology suggest that the excess Be forms microclusters in the films grown at higher temperatures—due to the higher surface mobility, leading to the growth of oval defects. Be rejection to the surface is also observed. The surfaces of samples with no cap layer present a granulation which may be related to the formation of a new phase like Be3P2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114981
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  • 2
    Electronic Resource
    Electronic Resource
    Oxynitride films formed by low energy NO+ implantation into silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2214-2215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxynitride (SiOxNy) insulators have been obtained by low-energy nitric oxide ion (NO+) implantation in Si substrates prior to thermal oxidation. Characterization by Fourier transform infrared (FTIR) and secondary ion mass spectrometry (SIMS) analyses reveal the presence of Si–O, Si–N, and Si–N–O bonds in the high quality 37 nm silicon oxynitride films. The dielectric constant=5.5, effective charge density=7×1010 cm−2 and breakdown E-fields of 3 MV/cm were determined by capacitance–voltage (C–V) and current–voltage (I–V) measurements, respectively, indicating that the SiOxNy films formed are suitable gate insulators for metal-oxide-semiconductor (MOS) devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117169
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3669-3671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we present evidence that Be3P2 microcrystals are formed in Be-doped phosphorus-based semiconductor compounds grown by chemical beam epitaxy. Our results suggest that microcrystal formation occurs when high Be concentrations (〉1018 cm−3) and temperatures higher than 500 °C are used for crystal growth. The main consequence of Be3P2 formation is a high phosphorus consumption close to these microcrystals that causes a large density of P vacancies in the semiconductor layer. This results in reduced electrical mobility, lattice parameter reduction, and poor crystalinity of the film in general. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123216
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