Keywords:
Compound semiconductors-Congresses.
;
Electronic books.
Description / Table of Contents:
This reference presents an overview of important developments in all III-V compound semiconductors such as GaAs, InP, and GaN; II-VI compounds such as ZnS, ZnSe, and CdTe; IV-IV compounds such as SiC and SiGe; and IV-VI compounds such as PbTe and SnTe. It emphasizes piezoelectric (or potentially smart) material heterostructures (Ga, Al, In)N, which will influence future research and development funding. As the preeminent forum for research in compound materials and their applications in devices, this book "provide[s] a very useful review of developments in this field and will be necessary reading for most researchers in electronics" (Aslib Book Guide).
Type of Medium:
Online Resource
Pages:
1 online resource (560 pages)
Edition:
1st ed.
ISBN:
9781482289442
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=5437209
Language:
English
Note:
Cover -- Half Title -- Title Page -- Copyright Page -- Contents -- International Symposium on Compound Semiconductors Award and Heinrich Welker Gold Medal -- Young Scientist Award -- Preface -- Sponsors -- Symposium Committees -- Chapter 1: Plenary Paper -- Heterostructures tomorrow: from physics to Moore's law -- Chapter 2: Growth -- State-of-the-art semi-insulating GaAs substrates -- Conformal growth of III-Vs on Si: from low defect density materials to advanced devices -- Reflectance difference spectroscopy for growth control and characterization of low-temperature grown (Al,Ga)As materials -- MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit -- Selective area growth of GaAs and InGaAs on GaAs (111)B substrates by migration-enhanced epitaxy -- MBE regrowth on AlxGa1-xAs cleaned by arsenic-free high temperature surface cleaning method -- Optimized surface treatment for MBE regrowth of (Al,Ga)As on (Al,Ga)As -- High electron and hole mobility Al0.3Ga0.7 As heterostructures grown in the same standard MBE setup -- Growth of metastable GaAsSb for InP-based type-II emitters -- MBE growth of pseudomorphic InGaAs/GaPAsSb quantum wells on GaAs -- GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3 µm wavelength lasers -- Titanium doping of GaSb MBE-layers -- LP-MOVPE growth of carbon doped In0.48Ga0.52P/GaAs HBT using an all-liquid-source configuration -- MOVPE growth of (AlGa)As and (InGa)P on GaAs-based trenches -- Structural and magnetic anisotropy of epitaxially grown MnAs on GaAs(001) -- Preparation of (Ga,Fe)As and its photo-magnetic characteristics -- Molecular beam epitaxy and properties of GaSb with MnSb clusters -- Chapter 3: Characterization -- Surface acoustic field mapping on GaAs using microscopic optical techniques.
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Excitation density dependence of Fermi edge singularity in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures -- Microscopic probing of localized excitons in quantum wells -- Competitive capture dynamics of photogenerated carriers in a GaAs/Al0.17Ga0.83As triple quantum well with different well thicknesses -- Electric field effect of GaAs photoluminescence in AlGaAs/GaAs pn heterojunction -- Ga[sup(+)] ion beam induced compositional intermixing in MBE grown Al[sub(x)]Ga[sub(1-x)]As/GaAs quantum wells: optimization of the structural parameters for low dose applications -- Superradiance in semiconductors and form-factor of homogeneous line broadening -- Direct investigation of low-density localized hole states by optical detection of quantum oscillations in AlGaAs/InGaAs/GaAs -- Electric field induced recombination centres in GaAs -- Electrical properties of InAs/AlSb/GaSb double quantum well structures -- How is resonant tunnelling affected by self-assembled quantum dots? -- Spectrum analysis of interband optical transmissions and quantitative model of eigen energies and absorptions in In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures -- Light-hole Stark-ladder photoluminescence induced by hole injection from a remote heavy-hole state in a GaAs/InAlAs superlattice -- Electroreflectance bias-wavelength mapping of the GaAs/InGaAs/AlGaAs structure -- Tunable GHz oscillations in weakly coupled GaAs/AlAs superlattices -- Channel depth dependent transport characteristics of a two-dimensional electron gas in an undoped GaAs/AlGaAs heterostructure -- Capacitance spectroscopy of Si-doped GaAs grown by atomic hydrogen-assisted molecular beam epitaxy -- Hall coefficient singularity observed from p-SiGeC grown on n--Si substrate -- Comparative X-HREM study of (311)A and (100)GaAs/AlAs superlattices.
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On the origin of strain relaxation in MOVPE InGaAs/GaAs SQWs by (010) aligned misfit dislocations -- Precise structure investigations of heterosystem epitaxial Si/porous Si/substrate Si -- Chapter 4: Quantum Wires and Quantum Dots -- InAs/GaAs quantum dots for 1.3 µm emitters -- Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures -- Selective MBE growth of InGaAs quantum wire-dot coupled structures with controlled double-barrier potential profiles -- Natural formation of square scale structures on patterned vicinal substrates by MOVPE: application to the fabrication of quantum structures -- Growth and electrical characterization of self-organized InAs quantum wires on InP -- Free-standing and overgrown InGaAs/GaAs nanotubes: fabrication, potential applications -- Free-standing conductive GeSi/Si helical microcoils, micro- and nanotubes -- Stacked/InAs quantum wires grown on vicinal GaAs(OOl) surface by molecular beam epitaxy -- GaAs oxide patterns generated by SPM tip-induced nano-oxidation technique using modulated tip-bias -- Transport through quasi 1DEG channels having periodic potential modulation induced by self-organized GaAs multiatomic steps -- GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits -- Spin relaxation dynamics of drifting electrons in GaAs narrow (10 nm) quantum wires -- Multiple gate-controlled peaks in a zero dimensional resonant tunnelling transistor -- Lattice-matched alloy films: a novel system for self-organized growth of quantum dots -- Planar ordering of InP quantum dots on (100) InGaP -- Initial stages of InAs-quantum dot formation studies by reflectance-difference spectroscopy and photoluminescence.
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Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy -- (InGa)As/(AlGa)As self-assembled quantum dots: optical properties and laser applications -- Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local strain effect on the band structures -- Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots -- 1.3 µm emission from quantum dots formed by 2 ML InAs deposition in a wide band gap (1.5-1.7 eV) InGaAlAs matrix -- Enhanced electron-phonon interaction in InAs/GaAs self-assembled quantum dots -- Spontaneous emission control of single quantum dots -- Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs -- High output power CW operation of a quantum dot laser -- Chapter 5: Electronic Devices -- Enhanced performance in surface-channel strained-Si n- and p-MOSFETs -- Suppressed boron diffusion in carbon-doped SiGe heterojunction bipolar transistors -- High-performance small InP/InGaAs HBTs with reduced parasitic base-collector capacitance fabricated using a novel base-metal design -- InGaP/GaAs power HBTs for L-band applications -- Extremely low-resistance PdIn ohmic contacts to p-GaAs for use in base contacts of GaAs-based HBTs -- New GaAs Schottky diodes with 180V blocking voltage for power electronics realised on 3" wafers -- W-band MMICs with 0.15 µm metamorphic InAlAs/InGaAs HEMTs on GaAs substrate: performance, thermal stability and reliability -- Complementary HFETs on GaAs with 0.2 µm gate length -- On-state breakdown measurements in GaAs MESFETs and InP-based HEMTs -- Study of alloyed and non-alloyed ohmic contact doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs with fT and fmax over 170 GHz.
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III/V device optimization by physics-based S-parameter simulation -- Fluorine contamination of PHEMTs during processing -- The mechanism for suppression of the gate lag in the novel GaAs power FET with the field-modulating plate -- Two-dimensional simulation of gate-lag phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs -- DC and microwave performance evaluation of 100 GHz ion-implanted MESFETs and MOCVD epitaxial doped-channel HFETs -- An electron wave interference transistor with a novel recess-etched grating structure fabricated using electron beam lithography -- Heterojunction interband tunnelling FETs: optimization and use in amplifier circuits -- Chapter 6: Optoelectronic Devices -- GaAsSb/GaAs new materials for long-wavelength VCSELs application -- 1.3 µm CW operation of InGaAsN lasers -- GaAs/AlGaAs unipolar mid-infrared quantum cascade lasers -- High-efficiency high-power InAlGaAs laser diodes at 980 nm -- Reactive-ion-etching (AlxGa1-x)0.5In0.5P quaternary compounds using chlorine and fluorine mixing plasma -- Small facet high power 670 nm AlGaInP/GaInP lasers -- Self-consistent analysis of high-temperature effects on InGaAsP/InP lasers -- 300 GHz continuously tunable high power three section DBR laser diode at 1060 nm -- GaInP burying growth by MOCVD for a refractive index guided BH-VCSEL -- Integratale high-power small-linewidth λ/4 phase-shifted 1.55 µm InGaAsP-InP-ridge-waveguide DFB-lasers -- Complex coupled 1.55 µm tunable super-grating DFB lasers and photonic filters -- InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38/60 GHz narrowband photoreceivers -- Optic-optic switching with DFB resonators -- Microlasers for planar monolithic integration -- Ridge waveguide lasers with 2D photonic crystal mirrors -- Optimizing/Fe-doped semi-insulating optical waveguide layers: detection of interface layer conduction.
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Photoresponse dynamics of uni-travelling-carrier and conventional pin-photodiodes.
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