Note: Front Cover -- High Excitation and Short Pulse Phenomena -- Copyright Page -- Table of Contents -- Preface -- Introduction -- PART 1: ELECTRON-HOLE PLASMAS -- Chapter 1. Electron-hole plasma generation and evolution in semiconductors -- 1. Electron-hole plasma energy -- 2. Dielectric constant in the presence of an electron-hole plasma -- 3. Generation of an electron-hole plasma by laser beam absorption -- 4. Electron-hole plasma evolution -- 5. Fascinating melting at T = 0 -- References -- Chapter 2. Non-equilibrium plasma: theory and experiment -- 1. Introduction -- 2. The system -- 3. The homogeneous state -- 4. Influence of interactions -- 5. The inhomogeneous state -- 6. Macroscopic variables -- 7. Transport coefficients -- 8. Balance equations -- 9. Velocities -- 10. Conclusions -- References -- Chapter 3. Plasma expansion and band-gap renormalization in CdTe and GaP -- 1. Introduction -- 2. Experimental -- 3. Renormalized band-gap in GaP -- 4. Excite and probe experiment (optical gain) -- 5. Optical gain and absorption -- 6. Luminescence experiments in CdTe -- 7. Band-gap renormalization in CdTe -- 8. Conclusions -- References and footnotes -- Chapter 4. Inelastic light scattering in highly excited GaAs -- 1. Experimental details -- 2. Theoretical background -- 3. Experimental results and discussion -- 4. Light scattering from non-equilibrium EHP -- 5. Density-temperature relation of quasi-equilibrium EHP -- Summary -- Acknowledgements -- References -- Chapter 5. Electron-hole plasma in Ga1-xALxAs: expansion and confinement -- References -- PART 2: TRANSPORT EFFECTS -- Chapter 6. Optical studies of fast plasma transport in Si -- Introduction -- Optical time-of-flight method -- Mott transition based investigation of the electron-hole plasma expansion -- Conclusions -- References. , Chapter 7. Transport of degenerate electron-hole plasmas in Si and Ge -- 1. Introduction -- 2. Momentum damping of electron-hole liquid -- 3. The phonon wind -- 4. Phonon-wind driven plasma in silicon -- References -- Chapter 8. On the investigation of the diffusion processes of photoexcited carriers in siliconby ps-reflectivity measurements -- References -- Chapter 9. Hot-carrier transient transport -- 1. Introduction -- 2. Fundamentals of charge transport. The Boltzmann equation -- 3. Nonlinear transport-hot carriers -- 4. Solution of transport problems- the Monte Carlo method -- 5. Transient transport -- 6. Diffusion, velocity autocorrelation, and noise -- References -- Chapter 10. New transport phenomena in variable gap semiconductors and their device applications -- 1. Electron velocity measurements in variable gap semiconductors -- 2. Impact ionization in graded gap semiconductors and the staircase solid-statephotomultipler -- 3. Repeated velocity overshoot devices and electrical polarization effect insawtooth superlattices -- References -- PART 3: SCREENING OF EXCITONS -- Chapter 11. Excitonic versus plasma screening in highly excited gallium arsenide -- 1. Introduction -- 2. Experiment -- 3. Theory -- 4. Conclusion -- References -- Chapter 12. Photoluminescence of germanium near the screening ionization limit of excitons -- 1. Introduction -- 2. Theory of phonon assisted luminescence -- 3. Line shape fitting -- 4. Discussion and conclusion -- References -- PART 4: OPTICAL BISTABILITY AND NONLINEARITY -- Chapter 13. Nonequilibrium many-body theory of optical nonlinearities of semiconductors -- 1. Introduction -- 2. Nonequilibrium Green's functions -- 3. Band-to-band transitions [12] -- 4. The biexciton two-photon resonance [15] -- Acknowledgement -- References -- Chapter 14. Nonlinear optics and plasma-induced bistability in CdS. , 1. Introduction -- 2. Laser-induced gratings -- 3. Electron-hole plasma -- 4. Plasma-induced bistability -- Acknowledgements -- References -- Chapter 15. Optical nonlinearity and bistability in CdS -- 1. Introduction -- 2. Experimental -- 3. Cryo-temperatures: increasing nonlinear absorption and resonatorless optical bistability -- 4. Room-temperature: saturable band-edge absorption -- Acknowledgements -- Note added in proof -- References -- Chapter 16. Optical bistability in CuCI -- 1. Introduction -- 2. The dielectric function in the density matrix formalism -- 3. Experimental setup for optical bistability -- 4. Experimental results and discussion -- Conclusion -- Acknowledgements -- References -- Chapter 17. Theory of absorptive bistability -- 1. Introduction -- 2. Theoretical model -- 3. Diffusion dominated limit -- 4. Spatial effects -- Acknowledgements -- Note added in proof -- References -- PART 5: SHORT PULSE SPECTROSCOPY -- Chapter 18. Progress in femtosecond measurement techniques -- References -- Chapter 19. Chirped and chirp-free femtosecond pulses in passively mode-locked dye lasers -- 1. Introduction -- 2. Pulse formation process - basic principles -- 3. Theoretical concept -- References -- Chapter 20. High density electron-hole plasma in Si induced by femtosecond pulses -- Introduction -- Reflectivity measurements -- Can thermal melting occur in 100 fs? -- Light scattering measurements -- Discussion and conclusion -- Acknowledgement -- References -- Chapter 21. Pulsewidth-dependence of nonlinear energy deposition and redistribution in Si, GaAs and Ge during 1um picosecond irradiation -- Experimental apparatus: -- Nonlinear absorption -- Melting threshold -- Phase transitions and surface morphology -- Optical limiting and regulation -- Summary -- Acknowledgements -- References. , Chapter 22. Subpicosecond time-resolved Mott transition in CuCI -- Acknowledgement -- References -- Chapter 23. Picosecond studies of highly excited CdS -- 1. Introduction -- 2. Luminescence experiments -- 3. Transmission experiments -- 4. Transient grating experiments -- 6. Summary -- Acknowledgements -- References -- PART 6: RELAXATION PROCESSES -- Chapter 24. Ultrafast relaxation processes in semiconductors -- 1. Introduction -- 2. Ultrafast relaxation processes in semiconductors -- Acknowledgements -- References -- Chapter 25. Hot electron relaxation in Ino.53Gao.47As -- Acknowledgment -- References -- Chapter 26. Transient anisotropy effects in the absorption saturation of GaAs -- 1. Introduction -- 2. Absorption saturation -- 3. Anisotropic absorption saturation -- 4. Four-wave mixing -- 5. Conclusions -- References -- Chapter 27. Bound exciton formation and excitonic localization in semimagnetic semiconductors -- 1. Introduction -- 2. Photomodulation spectroscopy- instrumentation -- 3. Bound and localized excitons in semimagnetic semiconductors -- 4. Summary -- Acknowledgement -- References -- Chapter 28. Carrier relaxation in InGaAs -- Introduction -- Experimental method -- Interpretation -- Conclusions -- Acknowledgements -- References -- Chapter 29. Raman probe studies of Nd : YA1G laser generated non-equilibrium excitationsin GaAs -- 1. Introduction -- 2. Scheme of generation and detection of non-equilibrium excitations -- 3. Experimental arrangement -- 4. Overview of the non-equilibrium Raman spectra -- 5. Non-equilibrium structure in the Stokes spectrum -- 6. Electronic Raman scattering by Zn acceptors in n-type GaAs -- 7. Discrimination between the alternative interpretations -- 8. Summary and conclusions -- 9. Acknowledgements -- References -- PART 7: PHYSICAL ASPECTS OF LASER ANNEALING. , Chapter 30. Studies of pulsed laser melting and rapid solidification using amorphous silicon -- 1. Introduction -- 2. Time-resolved measurements -- 3. Thermal conductivity of amorphous silicon -- 4. Transmission electron microscopy : evidence for bulk nucleation -- 5. Model calculations: solidification of highly undercooled ٩-Si -- Acknowledgements -- References -- Chapter 31. Thermal description of laser annealing -- Introduction -- Heat flow concepts -- Structure modification of surface layers -- Quencing of the amorphous phase -- References -- Chapter 32. Phonon populations during pulsed laser annealing -- 1. Introduction -- 2. Review of time-resolved measurements -- 3. Energy flow into the phonon system: electron-phonon interactions -- 4. Time-resolved Raman measurements -- 5. Summary -- Acknowledgements -- References -- Chapter 34. Laser-induced coherent modulation of solid and liquid surfaces -- 1. Introduction -- 2. Electrodynamics and spatial spectra -- 3. Material redistribution and feedback for growth -- 4. Transient diffraction and reflectivity experiments -- 5. Conclusions -- 6. Acknowledgements -- References -- PART 8: TWO-DIMENSIONAL SEMICONDUCTORS AND SUPERLATTICES -- Chapter 35. Electronic structure of two-dimensional semiconductor systems -- 1. Introduction -- 2. Envelope-function description of electronic states -- 3. Two-dimensional subbands in semiconductor heterostructures -- 4. Landau levels in quantum wells and superlattices -- 5. Summary and conclusions -- Note added in proof -- Acknowledgement -- References -- Chapter 36. Coulombic bound states in semiconductor quantum wells -- 1. Introduction -- 2. Coulombic impurities in single Q.W. structures [6-16] -- 3. Exciton binding energy in single quantum well [17-24] -- 4. Low temperature exciton trapping on interface defects [25,26] -- 5. Conclusion -- Acknowledgements. , References.

Note: Contract no. BMFT 01 BM 409/0 , Differences between the printed and electronic version of the document are possible. - Bibliographic datas partially researched , nIndex

Note: Contract no. BMBF 01 BM 626 , Differences between the printed and electronic version of the document are possible. - Bibliographic datas partially researched