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  • 1
    Description / Table of Contents: Chemical characterisation techniques have been essential tools in nanotechnology in recent years and Nanocharacterisation is a rapidly developing field, Chemical characterisation techniques have been essential tools in underpinning the explosion in nanotechnology in recent years and nanocharacterisation is a rapidly developing field. Contributions in this book from leading teams across the globe provide an overview of the different microscopic techniques now in regular use for the characterisation of nanostructures. Essentially a handbook to all working in the field this indispensable resource provides a survey of microscopy based techniques with experimental procedures and extensive examples of state of the art characterisation methods including: " Transmission Electron Microscopy " Electron Tomography " Tunneling Microscopy " Electron Holography " Electron Energy Loss Spectroscopy This timely publication will appeal to academics, professionals and anyone working fields related to the research and development of nanocharacterisation and nanotechnology
    Type of Medium: Online Resource
    Pages: 316 p , Online-Ressource , 159 b&w, ill
    Edition: RSC eBook Collection 1968-2009
    Language: English
    Note: Ebook , Chapter 1: Characterization of Nanomaterials using Transmission Electron Microscopy-- 1.1 Introduction-- 1.2 Imaging-- 1.2.1 Transmission Electron Microscopy-- 1.2.2 High-resolution electron Microscopy-- 1.2.3 Basis of High-resolution Imaging-- 1.2.4 Resolution Limits-- 1.2.5 Lattice Imaging or Atomic Imaging-- 1.2.6 Instrumental Parameters-- 1.3 Survey of Applications-- 1.3.1 Developments in HREM-- 1.3.2 Small Particles and Precipitates-- 1.3.3 Two-dimensional Objects-- 1.3.4 One-dimensional Objects-- 1.3.5 Zero-dimensional Objects-- 1.3.6 Surfaces and Interfaces-- 1.4 Emerging Trends and Practical Concerns-- 1.4.1 Atomic Location and Quantitative Imaging-- 1.4.2 Detection and Correction of Aberrations-- 1.4.3 Stobbs' Factor-- 1.4.4 Radiation Damage-- 1.5 Conclusions-- Acknowledgements-- References-- Chapter 2: Scanning Transmission Electron Microscopy-- 2.1 Introduction-- 2.1.1 Basic Description-- 2.1.2 Detectors-- 2.1.3 Electron Energy-loss Spectroscopy-- 2.2 Aberration-corrected STEM-- 2.2.1 The Aberration Function-- 2.2.2 Spherical and Chromatic Aberration-- 2.2.3 Aberration Correctors-- 2.2.4 What Do We See in a STEM?-- 2.2.5 Measuring Aberrations-- 2.2.6 Phonons-- 2.2.7 Resolution-- 2.2.8 Three-dimensional Microscopy-- 2.2.9 Channeling-- 2.3 Applications to Nanostructure Characterisation in Catalysis-- 2.3.1 Anomalous Pt-Pt Distances in the Pt/alumina Catalytic Systems-- 2.3.2 La Stabilisation of Catalytic Supports-- 2.3.3 CO Oxidation by Supported Noble-metal Nanoparticles-- 2.4 Summary and Outlook-- Acknowledgements-- References-- Chapter 3: Scanning Tunneling Microscopy of Surfaces and Nanostructures-- 3.1 History of the STM-- 3.2 The Tunneling Interaction and Basic Operating Principles of STM-- 3.3 Atomic-resolution Imaging of Surface Reconstructions-- 3.4 Imaging of Surface Nanostructures-- 3.5 Manipulation of Adsorbed Atoms and Molecules-- 3.6 Influence of the Surface Electronic States on STM Images-- 3.7 Tunneling Spectroscopy-- 3.8 Tip Artefacts in STM Imaging-- 3.9 Conclusions-- References-- Chapter 4: Electron Energy-loss Spectroscopy and Energy Dispersive X-ray Analysis-- 4.1 What is Nanoanalysis?-- 4.2 Nanoanalysis in the Electron Microscope-- 4.2.1 General Instrumentation-- 4.3 X-ray Analysis in the TEM-- 4.3.1 Basics of X-ray Analysis-- 4.3.2 Analysis and Quantification of X-ray Emission Spectra-- 4.3.3 Application to the Analysis of Nanometre Volumes in the S/TEM-- 4.3.4 Related Photon Emission Techniques in the TEM-- 4.4 Basics of EELS-- 4.4.1 Instrumentation for EELS-- 4.4.2 Basics of the EEL Spectrum-- 4.4.3 Quantification of EELS - The Determination of Chemical Composition-- 4.4.4 Determination of Electronic Structure and Bonding-- 4.4.5 Application to the Analysis of Nanometre Volumes in the S/TEM-- 4.5 EELS Imaging-- 4.6 Radiation Damage-- 4.7 Emerging Techniques-- 4.8 Conclusions-- References-- Chapter 5: Electron Holography of Nanostructured Materials-- 5.1.1 Basis of Off-axis Electron Holography-- 5.1.2 Experimental Considerations-- 5.2 The Mean Inner Potential Contribution to the Phase Shift-- 5.3 Measurement of Magnetic Fields-- 5.3.1 Early Experiments-- 5.3.2 Experiments Involving Digital Acquisition and Analysis-- 5.4 Measurement of Electrostatic Fields-- 5.4.1 Electrically Biased Nanowires-- 5.4.2 Dopant Potentials in Semiconductors-- 5.4.3 Space-charge Layers at Grain Boundaries-- 5.5 High resolution Electron Holography-- 5.6 Alternative Forms of Electron Holography-- 5.7 Discussion, Prospects for the Future and Conclusions-- Acknowledgements-- References-- Chapter 6: Electron Tomography-- 6.1 Introduction-- 6.2 Theory of Electron Tomography-- 6.2.1 From Projection to Reconstruction-- 6.2.2 Backprojection: Real-space Reconstruction-- 6.2.3 Constrained Reconstructions-- 6.2.4 Reconstruction Resolution-- 6.2.5 Measuring Reconstruction Resolution-- 6.2.6 The Projection Requirement-- 6.3 Acquiring Tilt Series-- 6.3.1 Instrumental Considerations-- 6.3.2 Specimen Support and Positioning-- 6.3.3 Specimen Considerations-- 6.4 Alignment of Tilt Series-- 6.4.1 Alignment by Tracking of Fiducial Markers-- 6.4.2 Alignment by Crosscorrelation-- 6.4.3 Rotational Alignment without Fiducial Markers-- 6.4.4 Other Markerless Alignment Techniques-- 6.5 Visualisation, Segmentation and Data Mining-- 6.5.1 Visualisation Techniques-- 6.5.2 Volume Rendering-- 6.5.3 Segmentation-- 6.5.4 Quantitative Analysis-- 6.6 Imaging Modes-- 6.6.1 Bright-field TEM-- 6.6.2 Dark-field (DF) Tomography-- 6.6.3 HAADF STEM-- 6.6.4 Meeting the Projection Requirement-- 6.6.5 Experimental Considerations-- 6.6.6 Limitations-- 6.6.7 Core-loss (Chemical Mapping) EFTEM-- 6.6.8 Low-loss EFTEM-- 6.6.9 Energy Dispersive X-ray (EDX) Mapping-- 6.6.10 Holographic Tomography-- 6.7 New Techniques-- 6.7.1 Electron Energy-loss Spectroscopy (EELS) Spectrum Imaging-- 6.7.2 Confocal STEM-- 6.7.3 Atomistic Tomography-- 6.8 Conclusions-- References-- Chapter 7: In-situ Environmental (Scanning) Transmission Electron Microscopy-- 7.1 Introduction-- 7.2 Background-- 7.3 Recent Advances in Atomic-resolution In-situ ETEM-- 7.4 Impact of the Atomic-resolution In-situ ETEM and Global Applications-- 7.5 Applications of Atomic-resolution In-situ ETEM in the Studies of Gas-Catalyst and Liquid-Catalyst Reactions-- 7.5.1 Liquid-phase Hydrogenation and Polymerisation Reactions-- 7.5.2 Development of Nanocatalysts for Novel Hydrogenation Chemistry and Dynamic Imaging of Desorbed Organic Products in Liquid-phase Reactions-- 7.5.3 Butane Oxidation Technology-- 7.5.4 In-situ Observations of Carbon Nanotubes (CNTs) in Chemical and Thermal Environments-- 7.6 Conclusions-- Acknowledgements-- References-- Subject Index--.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3485-3491 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well-ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2225-2233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the buildup of damage due to deuterium implantation in highly-oriented pyrolytic graphite (HOPG) is investigated. HOPG was implanted with 10–30 keV D3+ at different target temperatures between room temperature and 773 K with fluences from 1014 to 1018 D/cm2. Subsequently, the damage due to the implantation and the retained deuterium were measured by Rutherford backscattering (RBS) in a channeling direction (RBSc) and by the D(3He, p)α nuclear reaction analysis (NRA), respectively. The damage of selected samples was additionally observed with transmission electron microscopy (TEM). The initial trapping efficiency is unity in the whole temperature and energy range. The maximum retention of the deuterium, however, depends on the temperature and implantation energy. The damage in HOPG measured with RBSc starts to saturate at 5×1015 D/cm2 (295 K) and 1.3×1017 D/cm2 (773 K). Both fluences are well below the fluence at which amorphization is observed in TEM.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1853-1855 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High doses (7×1016–1.3×1017/cm2) of 170-keV Er+ ions were implanted into single-crystal Si at an implantation temperature of Ti=520 °C. During Er implantation ErSi2 crystallizes as coherent precipitates within a crystalline Si matrix. During the subsequent annealing at 800 °C a discontinuous buried layer of the single crystalline ErSi2 is formed. Implanted and annealed samples were subsequently reimplanted with 170-keV Er+ ions at 250〈Ti〈520 °C. The second implantation results in a mesotaxial growth of the previously formed buried single-crystal ErSi2 layer for implantation temperatures Ti(approximately-greater-than)300 °C where ion beam induced, defect mediated diffusion of Er atoms in the Si matrix occurs during the implantation process.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: An understanding of the atomic structure at internal interfaces is of crucial importance for the electronic and structural properties of most advanced materials. Here, we present a detailed study of the atomic structure at a [001] tilt grain boundary of σ5(210) in Tio2 (rutile). Z-contrast imaging is used to obtain a 2-D atomic map of the cation positions at the interface. Details of the charge state of cations and atomic structure around anion sites are then provided using electron energy loss spectroscopy. In particular, the spectroscopic data for oxygen is interpreted using multiple scattering theory to give 3-D structural information. These combined techniques allow a unique grain boundary structure to be defined.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2134-2136 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual compressive stress due to plume-induced energetic particle bombardment in CeO2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 858-860 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pyrolysis of high-purity digermane (Ge2 H6 ) has been used to grow epitaxial Ge films of high crystalline quality on (100) GaAs substrates in a low-pressure environment. X-ray double-crystal diffractometry shows that fully commensurate, coherently strained epitaxial Ge films can be grown on (100) GaAs at digermane partial pressures of 0.05–40 mTorr for substrate temperatures of 380–600 °C. Amorphous films also were deposited. Information about the crystalline films surface morphology, growth mode, and microstructure was obtained from scanning electron microscopy, cross-section transmission electron microscopy, and in situ reflectivity measurements. The amorphous-to-crystalline transition temperature and the morphology of the crystalline films were both found to depend on deposition conditions (primarily the incidence rate of Ge-bearing species and the substrate temperature). Epitaxial growth rates using digermane were found to be about two orders of magnitude higher than rates using germane (GeH4 ) under similar experimental conditions.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 156-159 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality silicon-on-insulator structures have been formed with dislocation densities in the top silicon layer below 104 cm−2 by oxygen implantation and one-step annealing at 1300 °C for 6 h. Careful control of the implantation conditions is required in order to produce a high density of cavities in the top silicon layer. These cavities provide a stress-free sink for silicon and oxygen interstitials, reducing the point-defect supersaturations and, therefore, the nucleation and growth of oxide precipitates and dislocation loops. They also provide an internal surface which blocks free propagation of dislocation loops to the surface avoiding the formation of threading dislocations. With continued annealing, both the cavities and the oxide precipitates eventually dissolve, leaving a high quality silicon surface layer with a very low dislocation density.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1720-1722 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated laser-induced oxidation of ion-implanted Si using a repetitively pulsed ArF laser, working at low-energy density (100–500 mJ/cm2). Oxidation is observed at energy densities between the melt threshold and that required for epitaxial recrystallization of the amorphous layer. At these energy densities, oxidation is not observed on virgin silicon. The factors that influence the oxidation process are discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2503-2505 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the damage produced by self-ion implantation in Si on dose is determined and is shown to exhibit two distinct behaviors: an initial sublinear increase of damage with dose, followed by a period of greatly accelerated growth. Ion backscattering analysis using both single- and double-alignment channeling measurements is used to determine the distribution of damage in the samples. The nature of the damage is determined from its thermal annealing behavior and differences in the spectra recorded in the two channeling configurations. Damage is found to consist predominantly of two components: simple defects, such as divacancies, and regions of amorphous Si. The behavior of these components is shown to be divergent at the fluence which separates the two different growth regimes. A model is proposed which considers the amorphization process in Si as a critical-point phenomenon, one in which the onset of amorphization leads to a cooperative behavior among the various types of damage resulting in a greatly accelerated transition.
    Type of Medium: Electronic Resource
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