ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Short wavelength Alx'Ga1−x'As-AlxGa1−xAs (x'∼0.85, x∼0.22) quantum-well heterostructure (QWH) laser diodes (well size Lz ≈400 A(ring)) that operate continuously (cw) at 300 K are subjected to hydrostatic pressure ((approximately-less-than)12 kbar). The emission spectrum and the light intensity versus current (L-I) curves are monitored to determine the pressure dependence of the direct (Γ) band gap and the threshold current. The band gap exhibits a linear pressure dependence with a noticeable change in slope at ∼4.5 kbar, similar to previously reported results for AlxGa1−xAs-GaAs QWH diodes. The threshold current increases monotonically with pressure, reflecting the increasing loss of carriers to the X and L bands. The short-wavelength cw limit of the system, i.e., a gain-guided laser with a 400-A(ring) AlxGa1−xAs (x∼0.22) quantum well and no separate waveguide region, is determined to be ∼6980 A(ring).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334461
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